• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.371-379
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• 2016

In this article, the foamed body of glass was manufactured from the waste borosilicate glass produced by wet pulverization process without additional pretreatment which can be used as a recycling method for waste LCD panel glass. Each 100 g of pulverized waste borosilicate glass with the size of less than 270 mesh were mixed with 0.3 weight fraction of carbon and 1.5 weight fraction of $Na_2CO_3$, $Na_2SO_4$ and $CaCO_3$ and let them foamed for 20 minutes at $950^{\circ}C$ to manufacture the foamed body having the density of less than $0.3g/cm^3$. Additionally, adding $SiO_2$ or $H_3BO_3$ to the mixture enabled the foamed body to have efficient formation of open pores which showed the possibility for producing the foamed body with new functionalities such as sound absorption.

• KSTLE International Journal
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• v.6 no.1
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• pp.13-16
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• 2005

Friction characteristics at nano-scale of self-assembled monolayers (SAMs) having different chain lengths and end groups were experimentally studied.51 order to understand the effect of the chain length and end group on the nano-scalefriction: (1) two different SAMs of shorter chain lengths with different end groups such as methyl and phenyl groups, and (2)four different kinds of SAMs having long chain lengths (C10) with end groups of fluorine and hydrogen were coated on siliconwafer (100) by dipping method and Chemical Vapour Deposition (CVD) technique. Their nano-scale friction was measuredusing an Atomic Force Microscopy (AFM) in the range of 0-40 nN normal loads. Measurements were conducted at the scanning speed of 2 $mu$m/s for the scan size of 1$mu$m x 1 $mu$m using a contact mode type $Si_3N_4$ tip (NPS 20) that had a nominal spring constant0.58 N/m. All experiments were conducted at anlbient temperature (24 $pm$1$circ$C) and relative humidity (45 $pm$ 5%). Results showedthat the friction force increased with applied normal load for all samples, and that the silicon wafer exhibited highest frictionwhen compared to SAMs. While friction was affected by the inherent adhesion in silicon wafer, it was influenced by the chainlength and end group in the SAMs. It was observed that the nano-friction decreased with the chain length in SAMs. In the caseof monolayers with shorter length, the one with the phenyl group exhibited higher friction owing to the presence of benBenerings that are stiffer in nature. In the case of SAMs with longer chain length, those with fluorine showed friction values relativelyhigher than those of hydrogen. The increase in friction due to the presence of fluorine group has been discussed with respect tothe siBe of the fluorine atom.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.110-115
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• 2000

Deposition conditions of diamond thin films were optimized using hot-filament chemical vapor deposition (HFCVD). Boron-doped diamond thin films with varying boron densities were then fabricated using B4C solid pellets. Current-voltage responses and field emission currents were measured to test the characteristics of field emission display (FED). With the increase of boron doping, the crystal size of diamond decreased slightly, but its quality was not changed significantly in case of small doping. The I-V characterization was performed for Al/diamond/p-Si, and the current of doped diamond film was increased $10^4\sim10^5$ times as compared with that of undoped film. In the field emission properties, the electrons were emitted with low electric field with the increase of doping, while the emission current increased. The onset-field of electron emission was 15.5 V/$\mu\textrm{m}$ for 2 pellets, 13.6 V/$\mu\textrm{m}$ for 3 pellets and 11.1 V/$\mu\textrm{m}$ for 4 pellets. With the incorporation of boron, the slope of Fowler-Nordheim graph was decreased, revealing that the electron emission behavior was improved with the decrease of the effective barrier energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.27-31
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• 2008

Due to the increasing need for miniaturization of electronic device, embedded resistor technology using thick film resistance paste to embed resistors currently mounted on the board thus effectively reducing board size, is being extensively researched. In this research, thick film resistor paste having $0.35{\sim}4k{\Omega}/sq$ range of resistivity were fabricated using mixtures of carbon black and epoxy resin. In order to adjust the TCR (temperature coefficient resistivity), TCR modifiers such as Ni-Cr alloy, $SiO_2$ powder were added and were able to improve on TCR value with $100ppm/^{\circ}C$. Finally embedded resistor board using thick film resistance paste were fabricated. Stable resistivity value and reliability results were achieved.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1197-1201
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• 2003

Thin film on SiO$_2$ glass was synthesized by a dip-coating method from the ZrO$_2$ sol which had dispersed nanosize Au particle under ambient atmosphere. After heat treatment of the prepared thin film, the characteristics were investigated by X-ray diffraction, UV-VIS spectrometer, Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). It was found that ZrO$_2$ thin film with 100 nm thickness was crystallized to tetragonal phase at 50$0^{\circ}C$. The size of dispersed Au particle was 15∼40nm and the film had a smooth surface with a roughness of 0.84 nm. The film showed nonlinearity characteristics with absorption peaks at 630∼670nm visible region because of the plasma resonance of Au metallic particles.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.807-810
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• 2002

$GdPO_4$:Tb phosphor particles with spherical shape and high photoluminescence were prepared by spray pyrolysis. The brightness of prepared $GdPO_4$:Tb under the vacuum ultraviolet(VUV) illumination was comparable with that of the commercial $Zn_2SiO_4$:Mn phosphor particles. The photoluminescence spectra of $GdPO_4$:Tb phosphor particles had maximum peak at 547 nm, and the sharp peaks at 480 nm, 580 nm, and 620 nm. The spherical morphology of prepared $GdPO_4$:Tb particles was completely maintained even after the posttreatment up to 1100 $^{\circ}C$. When the posttreatment temperature was over 1100 $^{\circ}C$, the particles did not have the spherical shape anymore. The average particle size of $GdPO_4$:Tb phosphor particles prepared by using $(NH_4)_2HPO_4$ was changed from 0.5 to 1.9 ${\mu}m$ and its effect on the PL intensity was investigated. It was found that the optimized $GdPO_4$:Tb particles have a good excitation spectrum comparable to that of the commercial $Zn_2SiO_4$:Mn phosphor particles under the VUV illumination from 140 to 220 nm. We concluded that the $GdPO_4$:Tb phosphor particles with spherical shape prepared by spray pyrolysis is a promising candidate for a green-emitting PDP phosphor.

• Resources Recycling
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• v.11 no.2
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• pp.45-51
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• 2002

This study was performed to investigate removal efficiency of wastewater by the prepared coagulant using waste oyster shell and loess. Waste oyster shell and loess contain respectively high CaO(55.43% by weight), $SiO_2$(45.30% by weight). Waste oyster shell was calcined to improve the purity of CaO at the calcination condition of $900^{\circ}C$ for 2hours, and then crushed 0.074 mm(200mesh) size by ball mill. Also, coagulant was prepared with calcined waste oyster shell and loess powder by hydration reaction. Calcined waste oyster shell and loess powder were combined with mixing ratio of 6 : 4, 7:3, 8:2 and 9:1. Though comparison experiment between prepared coagulant and chemical )$Ca(OH_2$, prepared coagulant was proved as having replaceable possibility of chemical )$Ca(OH_2$in wastewater treatment plant.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.69-69
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• 2017

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. There effluents are mainly treated by conventional technologies such are aerobic, anaerobic treatment and chemical coagulation. But, there processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These techniques include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that show higher purification results and low toxic sludge. There are many kinds of electrode materials for electrochemical process, among them, boron doped diamond (BDD) attracts attention due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD, among them, researches are focused BDD on Si substrate. But, Si substrate is hard to apply electrode application due to the brittleness and low life time. And other substrates are also not suitable for wastewater treatment electrode due to high cost. To solve these problems, Ti has been candidate as substrate in consideration of cost and properties. But there are critical issues about adhesion that must be overcome to apply Ti as substrate. In this study, to overcome this problem, TiN interlayer is introduced between BDD and Ti substrate. TiN has higher electrical and thermal conductivity, melting point, and similar crystalline structure with diamond. The TiN interlayer was deposited by reactive DC magnetron sputtering (DCMS) with thickness of 50 nm, $1{\mu}m$. The microstructure of BDD films with TiN interlayer were estimated by FE-SEM and XRD. There are no significant differences in surface grain size despite of various interlayer. In wastewater treatment results, the BDD electrode with TiN (50nm) showed the highest electrolysis speed at livestock wastewater treatment experiments. It is thought to be that TiN with thickness of 50 nm successfully suppressed formation of TiC that harmful to adhesion. And TiN with thickness of $1{\mu}m$ cannot suppress TiC formation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.423-423
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• 2007

In this study, the effects of annealing conditions on the structural and optical properties of ZnO films were investigated. ZnO oxide (ZnO) films were deposited onto $SiO_2$/Si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500{\sim}650^{\circ}C$ in the $O_2$ flow for 5 ~ 20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterized by SEM and XRD, respectively. The optical properties were evaluated by PL measurement at room temperature using a He-Cd 325 nm laser. According to the results, the optimal annealing conditions for the best photoluminescence (PL) characteristics were found to be oxygen fraction, ($O_2/O_2+Ar$) of 20%, RF power of 240W, substrate temperature of RT (room temperature), annealing condition of $600^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region). However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (002) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.