• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.225-232
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• 2012

It is described that the proton beam induceds micro-size defects and electronic deep levels in n or p type single crystal silicon. Positron lifetime and Coincidence Doppler Broadening Positron Annihilation Spectroscopy were applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 3.98 MeV proton beams ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values strongly depend on the irradiated proton beam, that indicated the defects generate more. Positron lifetime shows that positrons trapped in vacancies and lifetime ${\tau}_2$ increased according to proton irradiation.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.9-16
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• 2005

This paper presents the development of new anisotropic conductive adhesives with enhanced thermal conductivity for the wide use of adhesive flip chip technology with improved reliability under high current density condition. The continuing downscaling of structural profiles and increase in inter-connection density in flip chip packaging using ACAs has given rise to reliability problem under high current density. In detail, as the bump size is reduced, the current density through bump is also increased. This increased current density also causes new failure mechanism such as interface degradation due to inter-metallic compound formation and adhesive swelling due to high current stressing, especially in high current density interconnection, in which high junction temperature enhances such failure mechanism. Therefore, it is necessary for the ACA to become thermal transfer medium to improve the lifetime of ACA flip chip joint under high current stressing condition. We developed thermally conductive ACA of 0.63 W/m$\cdot$K thermal conductivity using the formulation incorporating $5 {\mu}m$ Ni and $0.2{\mu}m$ SiC-filled epoxy-bated binder system to achieve acceptable viscosity, curing property, and other thermo-mechanical properties such as low CTE and high modulus. The current carrying capability of ACA flip chip joints was improved up to 6.7 A by use of thermally conductive ACA compared to conventional ACA. Electrical reliability of thermally conductive ACA flip chip joint under current stressing condition was also improved showing stable electrical conductivity of flip chip joints. The high current carrying capability and improved electrical reliability of thermally conductive ACA flip chip joint under current stressing test is mainly due to the effective heat dissipation by thermally conductive adhesive around Au stud bumps/ACA/PCB pads structure.

• Journal of Radiation Protection and Research
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• v.41 no.2
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• pp.81-86
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• 2016

Background: For positron emission tomography (PET) application, cadmium zinc telluride (CZT) has been investigated by several institutes to replace detectors from a conventional system using photomultipliers or Silicon-photomultipliers (SiPMs). The spatial and energy resolution in using CZT can be superior to current scintillator-based state-of-the-art PET detectors. CZT has been under development for several years at the Korea Atomic Energy Research Institute (KAERI) to provide a high performance gamma ray detection, which needs a single crystallinity, a good uniformity, a high stopping power, and a wide band gap. Materials and Methods: Before applying our own grown CZT detectors in the prototype PET system, we investigated preliminary research with a developed discrete type data acquisition (DAQ) system for coincident events at 128 anode pixels and two common cathodes of two CZT detectors from Redlen. Each detector has a $19.4{\times}19.4{\times}6mm^3$ volume size with a 2.2 mm anode pixel pitch. Discrete amplifiers consist of a preamplifier with a gain of $8mV{\cdot}fC^{-1}$ and noise of 55 equivalent noise charge (ENC), a $CR-RC^4$ shaping amplifier with a $5{\mu}s$ peak time, and an analog-to-digital converter (ADC) driver. The DAQ system has 65 mega-sample per second flash ADC, a self and external trigger, and a USB 3.0 interface. Results and Discussion: Characteristics such as the current-to-voltage curve, energy resolution, and electron mobility life-time products for CZT detectors are investigated. In addition, preliminary results of gamma ray imaging using 511 keV of a $^{22}Na$ gamma ray source were obtained. Conclusion: In this study, the DAQ system with a CZT radiation sensor was successfully developed and a PET image was acquired by two sets of the developed DAQ system.

• KSBB Journal
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• v.29 no.3
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• pp.131-138
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• 2014

In this study, we isolated two novel chitinase producing bacterial strains from yellow loess samples collected from Jullanamdo province. The chitinase producing bacteria were isolated based on the zone size of clearance in the chitin agar plates. Both of them were gram positive, rod ($2{\sim}3{\times}0.3{\sim}0.4{\mu}m$), spore-forming, and motility positive. They were facultative anaerobic, catalase positive and hydrolyzed starch, gelatin, and casein. From the 16s rRNA gene sequence analysis, the isolates were labeled as Bacillus licheniformis KYLS-CU01 and B. licheniformis KYLS-CU02. The isolates showed higher extracellular chitinase activities than B. licheniformis ATCC 14580 as a control. The optimum temperature and pH for chitinase production were $40^{\circ}C$ and pH 7.0, respectively. Response Surface Methodology (RSM) was used to optimize the culture medium for efficient production of the chitinase. Under this optimal condition, 1.5 times higher chitinase activity of B. licheniformis KYLS-CU02 was obtained. Extracellular chitinases of the two isolates were purified through ammonium sulfate precipitation and anion-exchange DEAE-cellulose column chromatography. The specific activities of purified chitinase from B. licheniformis KYLS-CU01 and B. licheniformis KYLS-CU02 were 7.65 and 5.21 U/mg protein, respectively. The molecular weights of the two purified chitinases were 59 kDa. Further, the purified chitinase of B. licheniformis KYLS-CU01 showed high antifungal activity against Fusarium sp.. In conclusion, these two bacterial isolates can be used as a biopesticide to control pathogenic fungi.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.610-615
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• 2001

Over 800 thousand tons per year (TPY) agricultural biowastes, such as sugar cane bagasse, sugarcane leaf, rice straw, rice husk and corn leaf, are produced in Taiwan. These biomasses are the major types of agricultural wastes and are abundantly available. However, these biowastes cause disposal and landfill problems. Ossification ashes of the agricultural biowastes containing 70-95 % amorphous silica would make the utilization system of agricultural biowaste ashes become highly economically and environmentally attractive. Experimentally, high crystallinity (99%$^{+}$) zeolites ZSM-5 and ZSM-48 synthesized from the reaction mixtures containing a silica source from ashes of these biowastes gasification were investigated. Tetrapropylammonium bromide (TPABr) and 1,6-diamino-hexane (C$_{6}$ DN) were used as structure-directing agents in syntheses of ZSM-5 and ZSM-48, respectively. X-ray powder diffraction (XRD) and scanning electron microscopy/energy dispersive spectroscopy (SEM/EDX) data indicated that ZSM-5 or ZSM-48 with a high crystallinity can be obtained within 48 hours of crystallization in the high pressure (15-20 atm) autoclave at 393-473 K. The Si/Al ratios of synthetic zeolite products were determined by X-ray fluorescence (XRF) and induced couple plasma/mass spectroscopy (ICP/MS). It was observed that the ZSM-5 crystals a.e composed of hexagonal rod-shaped crystals with typically 8-13 пm in size by SEM. In addition, ZSM-48 crystalline materials are composed of spherical aggregates of needle-shaped or rod-like crystals with typically 2-3 пm in diameter and 6-8 пm in length.h.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.301-306
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• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.954-963
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• 2007

As RFID systems are applied to various fields and applications such as supply chain management, asset management, location based applications etc. the requirements becomes diverse. For example, Much higher performance, TCP/IP protocol stack are required in some applications. However, low end processors based systems such as 8051 processor can not meet such requirements due to their low processing capacity and limited size of memory. In this paper a UHF band RFID system which meets the EPC Class-1 Generation-2 specification with ARM920T-based processor is implemented and tested.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.59-59
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• 2010

ZnO는 II-VI 족 화합물 반도체로써 상온에서 큰 엑시톤 결합에너지 (~60 meV) 를 가지며 밴드갭이 3.37 eV인 직접 천이형 반도체로 잘 알려진 물질이다. 이러한 ZnO의 물리적 특성은 광학소자로 상용화된 GaN와 유사하기 때문에 LED나 LD등의 광 소자 재료로 주목 받고 있다. 또한 ZnO는 3족 원소 (In, Ga, Al)를 도핑 함으로써 전기적 특성 제어가 가능한 장점을 가지고 있다. 본 연구는 펄스레이저 증착법 (Pulsed Laser Deposition)을 이용하여 Si (111) 기판 위에 ZnO:In 박막을 성장 시켰으며, 도핑된 indium 양에 따른 ZnO 박막의 배향성 변화를 관찰 하였다. X-선 회절 분석법 (X-ray diffraction), 탐침형 원자현미경 (Atomic Force Microscope) 그리고 투과전자 현미경 (Transmission Electron Microscope)을 측정하였다. XRD 측정 결과 un-doped ZnO 박막은 (002) 방향으로 c-축 우선성장 하였다. 그러나 ZnO 박막내의 Indium 양이 증가 할수록 (002) 방향에서 (101), (102), (103) 등의 (101) 방향으로 성장이 변화 하였으며 5 at.% 이상에서는 (100) 방향의 성장이 관찰 되었다. TEM 측정 결과 un-doped ZnO 박막은 columnar 구조로 성장 되었으나, Indium 양이 증가할수록 column의 size가 감소하며, 5 at.% 이상에서 columnar 구조 성장이 거의 관찰되지 않는다. AFM 결과에서는 Indium 양이 증가 할수록 박막의 표면거칠기와 결정립 크기가 감소하였다.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.509-514
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• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.291-297
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• 2008

The solid particle erosion behaviour of unidirectional carbon fiber reinforced plastic (CFRP) composites was investigated. The erosive wear of these composites was evaluated at different impingement angles ($30^{\circ}$, $45^{\circ}$, $60^{\circ}$, $90^{\circ}$), different impact velocities (40, 55, 60, 70m/s) and at three different fiber orientations ($0^{\circ}$, $45^{\circ}$, $90^{\circ}$). The erodent was SiC sand with the size $50-100{\mu}m$ of irregula. shapes. The result showed ductile erosion behaviour with maximum erosion rate at $30^{\circ}$ impingement angle. The fiber orientations had a significant influence on erosion. The erosion rate was strongly dependent on impact velocity which followed power law $E{\propto}\;V^n$. Based on impact velocity (V), impact angle (${\alpha}$) and fiber orientation angle (${\beta}$), a method was proposed to predict the erosion rate of unidirectional fiber reinforced composites.