• Applied Chemistry for Engineering
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• v.10 no.5
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• pp.644-651
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• 1999

In this experiment the Iron phthalocyanine (FePc) films on Si-wafer and alumina pallet were prepared using vacuum sublimation with conditions of changing reaction time, temperature, and deposition rate. Then, some samples were annealed following annealing. Techniques such as XRD, SEM, and resistance measurement method, were dedicated to characterize the changes of surface structure, phase transformation and electric resistance sensitivity in accordance with change of film thickness. In proportion to the decrease of deposition temperature from $370^{\circ}C$ to $350^{\circ}C$, intensities of (200), (011), (211) and (114) planes of $\alpha$-phase were decreased and (100) plane of $\beta$-phase were appeared. The film thickness were controlled by regulating the volume of precursor material during rapid deposition. As a result, it was observed that crystalline particle size had been increased according to the increase of film thickness and $\alpha$-phase transformed to $\beta$-phase. In consequence of measuring the crystallinity of films annealed between $150^{\circ}C$ and $350^{\circ}C$, $\alpha$- to $\beta$-phase transformation was appeared to begin at $150^{\circ}C$ and completely transformed to $\beta$-phase at $350^{\circ}C$. Electric resistance sensitivity of FePc film to $NO_x$ gas along temperature change of FePc films was observed to be more stable with the decrease of the film thickness.

• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.741-745
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• 2002

Yttria-stabilized zirconia(YSZ) nanopowders were prepared by sol-gel method using zirconium-n-butoxide(ZNB) and yttrium nitrate as precursors. In addition, the effect of water content added during the hydrolysis reaction of ZNB was investigated on the phase composition and pore structure of the product powders. The phase composition of YSZ nanopowders with calcination temperatures showed the same trend, irrespective of $H_2O$ amounts added during the hydrolysis reaction of ZNB. All powders dried at $100^{\circ}C$ were amorphous and transformed to cubic phase at $400^{\circ}C$, which converted to tetragonal phase at $1,000^{\circ}C$. Monoclinic phase also appeared at $1,000^{\circ}C$. The powders showed the mixture of tetragonal and monoclinic phases from $1,000^{\circ}C$ to $1,400^{\circ}C$. The pore size distributions of the dried powders prepared with small amounts of water(less than or equal to $H_2O/ZNB=20$) showed mesopores, while those prepared with large amounts of water(greater than or equal to $H_2O/ZNB=50$) exhibited micropores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.62-62
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• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.199-204
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• 2003

Microstructure and chemical analysis of sintered bricks containing recycled wastes were investigated by SEM and EDS. The recycled wastes for which substitute ceramic raw materials were EAF (electric arc furnace) dust, fly ash and stone ash. Yellowish and brownish regions on the surface and brownish and blackish regions in the inside of bricks were observed. Main component of yellowish region on the surface turned out to be Zn. No chemical difference between the black-core region and brownish matrix. Mullite crystallites of 1 fm size were distributed in the inside of bricks and enclosed by glass phases. It seems that alumine-silicate mixtures of kaolin and fly ash were transformed to mullite crystallites during the sintering. Relatively large pores ot several ten fm size were observed in the black-core region in the inside of bricks. The main components of the inside of brick were Al and Si. The minor components were C, Na, Mg, K, Ca, and Fe. Particularly, the precipitates of Fe-rich crystallites were observed in the amorphous matrix. These precipitates were formed due to the local reduction atmosphere in the inside of bricks. Zn-rich covers were found on the surface of bricks because Zn diffused from the inside of bricks to the surface under the reduction atmosphere.

• Journal of Radiation Protection and Research
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• v.6 no.1
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• pp.25-30
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• 1981

A measurement has been made for the radioactivities (or concentrations) of radon daughters, i.e., RaA, RaB and RaC in airborne dust by means of single filtering method. This is to evaluate the radioactivities in terms of Ci or WL (working level) from gross alpha counts measured in the selected-time intervals after an air sample is taken from a membrane filter paper with a mean pore size of $0.8{\mu}m$. This work involves determinations of standard deviation in radioactivities, radioactive equilibrium factor and ratio. It appears that a concentration of total radon daughters is $0.30{\sim}2.36pCi/l\;or\;0.89{\times}10^{-3}{\sim}6.57{\times}10^{-3}WL$, depending on the sampling time. Generally the highest concentration was observed around nine o'clock in a day while the lowest value was obtained around seventeen o'clock. Standard deviations based on counting statistics of RaA's, RaB's and RaC's concentrations are ${\pm}57.75%,\;{\pm}22.32%\;and\;{\pm}31.29%$, respectively. It is revealed that the radioactive equilibrium factor is 0.322 while the radioactive equilibrium ratio is of pattern $C_1>C_2>C_3$ in general. Here $C_1,\;C_2\;and\;C_3$ stand for concentrations of RaA,RaB and RaC, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• Journal of Powder Materials
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• v.16 no.5
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• pp.316-325
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• 2009

Fe based (Fe$_{68.2}$C$_{5.9}$Si$_{3.5}$B$_{6.7}$P$_{9.6}$Cr$_{2.1}$Mo$_{2.0}$Al$_{2.0}$) amorphous powder, which is a composition of iron blast cast slag, were produced by a gas atomization process, and sequently mixed with ductile Cu powder by a mechanical ball milling process. The experiment results show that the as-prepared Fe amorphous powders less than 90 $\mu$m in size has a fully amorphous phase and its weight fraction was about 73.7%. The as-atomized amorphous Fe powders had a complete spherical shape with very clean surface. Differential scanning calorimetric results of the as-atomized Fe powders less than 90 $\mu$m showed that the glass transition, T$_g$, onset crystallization, T$_x$, and super-cooled liquid range $\Delta$T=T$_x$-T$_g$ were 512, 548 and 36$^{\circ}C$, respectively. Fe amorphous powders were mixed and deformed well with 10 wt.% Cu by using AGO-2 high energy ball mill under 500 rpm.

• Applied Biological Chemistry
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• v.27 no.2
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• pp.112-118
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• 1984

Inverase was entrapped in calcium alginate gel. The immobilized beads had excellent uniform size and configuration. To screen the optimal conditions possessing high enzyme activity, effects of sodium alginate concentration, $CaCl_2$ concentration, and the incubation time of beads in $CaCl_2$ solution during the immobilization procedure were investigated. Immobilized beads prepared from the optimal conditions had 18.8 units per ml of gel, which is equivalent to 68% of the activity of soluble enzyme. Several kinetic parameters were determined: Km value. 143 mM; optimum pH, 4.5; optimum temperature, $50^{\circ}C$. Enzyme loading capacity was 150 mg per 20 ml gel. No significant decrease in sugar conversion was observed during the column operation for 6 days.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.11
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• pp.1108-1114
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• 2007

The low kinds of $Al_2O_3$ composite ceramics were prepared using a mixture of 85 wt.% $Al_2O_3$ (mean size $0.5\;{\mu}m$), 15 wt.% SiC Powder with $Y_2O_3$, as an additive powder (0, 1, 3 and 5 wt.%). The crack-healing strengths were studied as functions of crack-healing temperature and amount of $Y_2O_3$. The in-situ crack-healing behavior was observed at 1,573 K for 1 h in the air. The heat treated specimen with 3 wt.% of $Y_2O_3$ showed better crack-healing ability than specimen with 1 or 5 wt.% of $Y_2O_3$. In case of specimen with 3 wt.% of $Y_2O_3$, the bending strength of the crack-healed specimen at 1,473 K was recovered to the bending strength of smooth specimen treated at 1573 K. The heat-resistance limit temperature of $Al_2O_3$ composite ceramics was 1,073 K, 1,373 K, 873 K for the specimen with 1, 3, 5 wt.% of $Y_2O_3$.