• 한국재료학회지
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• 제13권6호
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• pp.404-408
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• 2003

SiC nanorods have been grown on Si (100) substrate directly. Tetramethylsilane and Ni were used for SiC nanorod growth. After 3minute, SiC nanorod had grown by CVD. Growth regions ware divided by two regions with diameter. The First region consisted of thin SiC nanorods having below 10 nm diameter, but second region's diameter was 10∼50 nm. This appearance shows by reduction of growth rate. The effect of temperature and growth time was investigated by scanning electron microscopy. Growth temperature and time affected nanorod's diameter and morphology. With increasing growth time, nanorod's diameter increased because of the deactivation effect. But growth temperatures affected little. By TEM characterization, grown SiC nanorods consisted of the polycrystalline grain.

• 한국표면공학회지
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• 제36권3호
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• pp.234-241
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• 2003

SiC nanorod was synthesized directly on Si substrate using hexamethyldisilabutane and Fe catalyst with (111) direction. Fe acted a liquid catalyst at growth condition. Grown SiC nanorod has about 30nm diameter and $5{\mu}m$ length. SiC nanorod growth was divided by trro regions with diameter distribution. This diameter distribution were occurred by surface deposition at as - grown nanorod's surface by limitation of growth rate. At higher temperature, these division not occurred. Growth temperature and flow rates affected diameter and morphology of nanorods. With increasing flow rate of source gas, nanorod's diameter increased because of deactivation effect. Case of the increasing temperature, growth rate increased so deactivation did not occurred.

• 한국세라믹학회지
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• 제56권5호
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• pp.453-460
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• 2019

To reduce residual pores of composites and obtain a dense matrix, SiC_f/SiC composites were fabricated by chemical vapor deposition (CVI) using SiC nanorods. SiC nanorods were uniformly grown in the thickness direction of the composite preform when the reaction pressure was maintained at 50 torr or 100 torr at 1,100℃. When SiC nanorods were grown, the densities of the composites were 2.57 ~ 2.65 g/㎤, higher than that of the composite density of 2.47 g/㎤ for non-growing of SiC nanorods under the same conditions; grown nanorods had uniform microstructure with reduced large pores between bundles. The flexural strength, fracture toughness and thermal conductivity (room temperature) of the SiC nanorod grown composites were 412 ~ 432 MPa, 13.79 ~ 14.94 MPa·m^1/2 and 11.51 ~11.89 W/m·K, which were increases of 30%, 25%, and 25% compared to the untreated composite, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.638-638
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• 2013

ZnO는 넓은 밴드갭(3.37 eV)를 가지기 때문에 UV detector로 유용하게 쓰일 수 있다. 본 연구에서는 Graphene 위에 ZnO nanorod를 hydrothermal 방법을 사용하여 성장한 후 Graphene 위에 전극을 형성한 후 UV 센서를 제작하였다. Si의 기판위에 SiO2의 막을 증착을 하고 그 위에 Graphene을 전도시킨다. Graphene위에 ZnO nanorod의 성장을 위해서 ZnO seed layer를 sputtering 방법으로 얇게 증착을 시킨다. ZnO nanorod의 성장은 hydrothermal의 방법으로 Zinc nitrate hexahydrate와 암모니아를 수용액에 넣은 후 $80^{\circ}C$에서 성장하였다. Graphene 위에 ZnO가 없는 부분에 전극을 형성하여 UV의 세기에 따른 IV 전기적 특성의 변화를 관측한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.62-62
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• 2007

ZnO 박막이 성장된 Si기판을 이용하여 Thermal evaporation을 사용하여 온도에 따라 합성된 1-D의 구조의 ZnO nanorods의 형상과 특성에 대하여 연구를 하였다. 합성온도는 $700^{\circ}C{\sim}900^{\circ}C$를 사용하였고 온도가 낮아짐에 따라 Vertical한 1-D ZnO가 합성이 되는 것을 알 수 있었다. 특히, $700^{\circ}C$에서 합성된 1-D ZnO는 ~100nm의 폭을 가지고 800nm의 길이의 Nanorods로 성장이 되는 것을 알 수 있었고, 상온 PL측정을 통해 온도가 증가함에 따라 O 결핍 또는 Zn의 과잉에 의한 Deep level emission이 증가하는 것을 알 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.173-173
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.172-172
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• 2003

• 한국재료학회지
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• 제24권1호
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.454-459
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• 2003

We investigate the structure and properties of SiC (Silicon Carbide) nanotubes using molecular dynamics simulation based on the Tersoff bond-order potential. For small diameter tubes, the Si-C bond distance of SiC nanotubes decreases as the nanotube diameter is decreased, due to curvature of the nanotube surface. We find that Young's modulus of SiC nanotubes is somewhat smaller than that of the other nanotubes considered so far. However, Young's modulus for SiC nanotubes is larger than that of ${\beta}$-SiC and almost equal to the experimental value for SiC nanorod and SiC whisker. The strain energy of the SiC nanotubes is also lower than that of the other nanotubes. The lower strain energy of SiC nanotubes raises the possibility of synthesis of SiC nanotubes.

• 한국재료학회지
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• 제22권4호
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• pp.180-184
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• 2012

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.