• 동력기계공학회지
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• 제9권4호
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• pp.118-123
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• 2005

We have investigated the fabrication of Si nanoparticles and $C_{60}$ thin films by pulsed laser ablation. By atomic force microscopy(AFM), the laser-deposited $C_{60}$ thin film was verified to have surface far smoother than the surfaces of films produced by the conventional evaporation method. The Si deposited at a He atmosphere of 0.2 Torr was with about $60{\AA}$ height of the Si nanoparticles, suggesting that it was uniformly deposited. We observed visible green emissions spectra in the $Si/C_{60}$ multilayer films after laser annealing. It is considered that this green emissions is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ by laser annealing.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.255-262
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• 2016

Effects of $SiO_x$ or C shells on electrochemical properties of Si nanoparticles were investigated. $SiO_x$ shells with thickness of 10~15 nm were formed on homogeneously crystalline Si nanoparticles. Incase of Si-C nanoparticles, there were 30~40 layers of C with a number of defects. Li-ion batteries were fabricated with the above-mentioned nanoparticles, and their electrochemical properties were measured. Pristine Si shows a high IRC (initial reversible capacity) of 2,517 mAh/g and ICE (initial columbic efficiency) of 87%, but low capacity retention of 22%, respectively. $SiO_x$ shells decreased IRC (1,534 mAh/g) and ICE (54%), while the retention increased up to 65%, which can be explained by irreversible phases such as $LiO_2$ and $Li_2SiO_3$. C shells exhibited no differences in IRC and ICE compared to the pristine Si but an enhanced retention of 54%, which might be from proper defect structures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.598-601
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• 2000

We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

• 한국재료학회지
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• 제23권4호
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• pp.246-249
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• 2013

Nano-sized ${\beta}$-SiC nanoparticles were synthesized combined with a sol-gel process and a carbothermal process. TEOS and carbon black were used as starting materials for the silicon source and carbon source, respectively. $SiO_2$ nanoparticles were synthesized using a sol-gel technique (Stober process) combined with hydrolysis and condensation. The size of the particles could be controlled by manipulating the relative rates of the hydrolysis and condensation reactions of tetraethyl orthosilicate (TEOS) within the micro-emulsion. The average particle size and morphology of synthesized silicon dioxide was about 100nm and spherical, respectively. The average particles size and morphology of the used carbon black powders was about 20nm and spherical, respectively. The molar ratio of silicon dioxide and carbon black was fixed to 1:3 in the preparation of each combination. $SiO_2$ and carbon black powders were mixed in ethanol and ball-milled for 12 h. After mixing, the slurries were dried at $80^{\circ}C$ in an oven. The dried powder mixtures were placed in alumina crucibles and synthesized in a tube furnace at $1400{\sim}1500^{\circ}C$ for 4 h with a heating rate of $10^{\circ}C$/min under flowing Ar gas (160 cc/min) and furnace cooling down to room temperature. SiC nanoparticles were characterized by XRD, TEM, and SAED. The XRD results showed that high purity beta silicon carbide with excellent crystallinity was synthesized. TEM revealed that the powders are spherical shape nanoparticles with diameters ranging from 15 to 30 nm with a narrow distribution.

• Applied Microscopy
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• 제34권1호
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• pp.23-29
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• 2004

본 연구에서는 에너지 여과장치와 직접 고온 가열 장치를 이용하여 실리카 나노입자의 비정질 구조 분석과 가열실험을 통한 구조변화에 대해 연구하였다. 실리카 나노입자의 전자회절도형은 세 개의 diffuse한 ring으로 구성이 되어 있으며, $900^{\circ}C$의 온도에서 실리카 나노입자는 서서히 결정화가 이루어짐을 알 수가 있었다. 세 개의 diffuse한 ring은 비정질 실리카 구조가 $SiO_4$ tetrahedra가 구조의 기본 단위로 이루어졌으며, 가열에 의해 이들이 점이적으로 tridymite 이상적인 층상 구조로 결정화되어 간다는 것을 이해할 수 있었다. 또한 전자현미경 내의 고진공하에서 $850^{\circ}C$ 이상의 온도 가열로 인해 $SiO_2$로부터 증발된 SiO가 grid에 재증착되는 것을 관찰할 수 있었고, 남아 있는 $SiO_2$는 전기로를 이용한 가열 실험결과와 같이 비정질 구조에서 orthorhombic trydimite로의 결정화가 이루어짐을 알 수 있었다.

• Advances in nano research
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• 제14권2호
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• pp.195-200
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• 2023

Safety in sports is important because if an athlete has an accident, he may not be able to lead an everyday life for the rest of his life. The safety of sports facilities is very effective in creating people's sports activities, with the benefits of staying away from physical injury, enjoying sports, and mental peace. Everyone has the right to participate in sports and recreation and to ensure that they want a safe environment. This study prepares a very good Nickel-Cobalt -Silicon carbide (Ni/Co-SiC) nanocomposite with convenient geometry on the leg press machine rod, employing the pulse electrodeposition technique to reduce the rod's wear and increase the durability of sports equipment and control sports damages. The results showed that the Ni/Co-SiC nanocomposite formed at 2 A/dm2 shows extraordinary microhardness. The wear speed for the Ni/Co-SiC nanocomposite created at 4 A/dm2 was 15 mg/min, showing superior wear resistance. Therefore, the Ni/Co-SiC nanocomposite can reduce sports equipment's wear and decrease sports injuries. Ni-Co/SiC nanocomposite layers with various scopes of silicon carbide nanoparticles via electrodeposition in a Ni-Co plating bath, including SiC nanoparticles to be co-deposited. The form and dimensions of Silicon carbide nanoparticles are watched and selected using Scanning Electron Microscopy (SEM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• 전기전자학회논문지
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• 제20권2호
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• pp.177-180
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• 2016

본 연구에서는 4H-SiC(0001)기판 위에서 형성되는 나노구조화를 제어하기 위해 상지층과 하지층으로 구성된 이중층 금속을 증착하고 두께, 열처리 시간을 변화하였다. 또한 표면에너지와 응집현상의 상관관계를 분석하기 위해 SiC와는 다른 표면에너지를 갖는 Glass와 Si기판에도 같은 조건으로 실험하였다. FE-SEM을 통하여 금속이 나노구조화를 형성하는 두께가 Ag=20nm, Ti=2nm임을 확인 했으며 두께가 두꺼울 수록 나노 입자가 형성되지 않았다. 세기판의 표면에너지를 구하기 위해 접촉각 측정기를 통해 정접촉각법으로 측정하였다. 그 결과 표면에너지 값이 가장 높은 Glass(53.89 mN/m) 기판에서 나노 입자가 가장 고르게 분포된 형태를 보였으며 SiC(41.13 mN/m)에서 나노구조화 되는 양상을 보였고, Si(32.96 mN/m)에서는 NPs 형성이 되지 않았다. 표면에너지가 작을수록 나노 입자형성이 고르게 분포되는 현상을 Young equation으로 분석하였다.

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.3025-3032
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• 2012

Carbon microcapsules containing silicon nanoparticles (Si NPs)-carbon nanotubes (CNTs) nanocomposite (Si-CNT@C) have been fabricated by a two step polymerization method. Silicon nanoparticles-carbon nanotubes (Si-CNT) nanohybrids were prepared with a wet-type beadsmill method. A polymer, which is easily removable by a thermal treatment (intermediate polymer) was polymerized on the outer surfaces of Si-CNT nanocomposites. Subsequently, another polymer, which can be carbonized by thermal heating (carbon precursor polymer) was incorporated onto the surfaces of pre-existing polymer layer. In this way, polymer precursor spheres containing Si-CNT nanohybrids were produced using a two step polymerization. The intermediate polymer must disappear during carbonization resulting in the formation of an internal free space. The carbon precursor polymer should transform to carbon shell to encapsulate remaining Si-CNT nanocomposites. Therefore, hollow carbon microcapsules containing Si-CNT nanocomposites could be obtained (Si-CNT@C). The successful fabrication was confirmed by scanning electron microscopy (SEM) and X-ray diffraction (XRD). These final materials were employed for anode performance improvement in lithium ion battery. The cyclic performances of these Si-CNT@C microcapsules were measured with a lithium battery half cell tests.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.181-181
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• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.