• 한국세라믹학회지
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• 제50권6호
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• pp.359-363
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• 2013

Silicon carbide and its composites are being considered as a nuclear fuel cladding material for LWR nuclear reactors because they have a low neutron absorption cross section, low hydrogen production under accident conditions, and high strength at high temperatures. The SiC composite cladding tube considered in this study consists of three layers, monolith CVD SiC - $SiC_f$/SiC composite -monolith CVD SiC. The volume fraction of SiC fiber and surface roughness of the composite layer affect mechanical and corrosion properties of the cladding tube. In this study, various types of SiC fiber preforms with tubular shapes were fabricated by a filament winding method using two types of Tyranno SA3 grade SiC fibers with 800 filaments/yarn and 1600 filaments/yarn. After chemical vapor infiltration of the SiC matrix, the surface roughness and fiber volume fraction were measured. As filament counts were changed from 800 to 1600, the surface roughness increased but the fiber volume fraction decreased. The $SiC_f$/SiC composite with a bamboo-like winding pattern has a smaller surface roughness and a higher fiber volume fraction than that with a zigzag winding pattern.

• 대한기계학회논문집B
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• 제26권11호
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• pp.1481-1487
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• 2002

The thin SiC filament technique has been employed to identify the possibility of measuring flame temperature, and especially unstable near-extinction flame temperature in an oxidizer deficient ambience, by comparing the relative visible (non-IR) luminosities of SiC filaments with thermocouple measured temperature in co-flowing, laminar propane/air diffusion flames. The results show good agreement between the digitized relative visible luminosity profiles of the SiC filaments and temperature profiles measured using a thermocouple at temperatures above $700^{\circ}C$, although, a non-linear calibration is probably required far the whole temperature range. The highest radial peak temperature exists near to the nozzle exit. and the centerline temperatures were virtually unchanged with increasing flame height in an oxidizer deficient near-extinction flame.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.25-27
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• 1998

The effect of gas activation on the formation of SiC layer on Si substrate using methane as a carbon source was investigated. Tungsten filaments, heated above 200$0^{\circ}C$, were used to activate the methane-hydrogen mixed gas. The dissociation of methane gas by the heated filament was enough to form a SiC layer successfully, which was very difficult without any activation. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The stoichiometry was also close to 1:1. However, the characteristic of the SiC layer was dependent on the heat-treatment condition. The general behavior of the layer growth with the variables was discussed.

• 한국세라믹학회지
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• 제53권6호
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• pp.615-621
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• 2016

SiC-polycrystalline fiber (Tyranno SA, Ube Industries, Ltd.) shows very high heat-resistance and excellent mechanical properties up to very high temperatures. However, further increase in the strength is required. Up to now, we have already clarified the relationship between the strength and the defect-size of the SiC-polycrystalline fiber. The defects are formed during the conversion process from the raw material (amorphous Si-Al-C-O fiber) into SiC-polycrystalline fiber. In this conversion process, a degradation of the Si-Al-C-O fiber and a subsequent sintering of the degraded fiber proceed as well, accompanied by a release of CO gas and compositional changes, to obtain the dense SiC-polycrystalline fiber. Since these changes proceed in each filament, the strict control should be needed to minimize residual defects on the surface and in the inside of each filament for achieving the higher strength. In this paper, the controlling factors of the fiber strength and the fine structure will appear.

• 한국재료학회지
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• 제10권8호
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• pp.575-580
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• 2000

Ta(TaC) 필라멘트를 이용한 HF-CVD 법에 의하여 $Si_3N_4$, SiC, WC, $Al_2O_3$를 기판으로 다이아몬드 박막을 증착하고, 그 밀착특성을 평가하였다. 로내의 $CH_4$농도를 10%로 높게 하였을 경우에는 막중에 graphitic(amorphous) carbon이 생성됨을 확인할 수 있었다. 박막을 $12\mu\textrm{m}$ 정도까지 두껍게 하면, WC기판에서는 부분적 박리형상이 관찰되었으나, $Si_3N_4$를 기판으로 하였을 경우에는 안정한 박막을 얻을 수 있었다. Indentation test 결과로부터 grainding에 의한 기판표 처리가 밀착성 향상에 효과적이라는 것을 알 수 있었다. 또 compression topple test에서는 박막의 두께는 밀착성과 반비례의 관계를 가지는 것을 알 수 있었다. 수 있었다.

• 한국세라믹학회지
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• 제51권5호
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• pp.453-458
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• 2014

SiC and its composites have been considered for use as nuclear fuel cladding materials of pressurized light water reactors. In this study, a $SiC_f$/SiC composite as a constituent layer of SiC triplex fuel cladding was fabricated using a chemical vapor infiltration (CVI) process in which tubular SiC fiber preforms were prepared using a filament winding method. To enhance the matrix density of the composite layer, winding patterns, deposition temperature, and gas input ratio were controlled. Fiber arrangement and porosity were the main parameters influencing densification behaviors. Final density of the composites decreased as the SiC fiber volume fraction increased. The CVI process was optimized to densify the tubular preforms with high fiber volume fraction at a high $H_2$/MTS ratio of 20 at $1000^{\circ}C$; in this process, surface canning of the composites was effectively retarded.

• 한국세라믹학회지
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• 제32권7호
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• pp.793-798
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• 1995

The relaxation of the intrinsic stresses in the diamond films fabricated by the hot filament CVD was studied, and it was confirmed that the tensile intrinsic stresses in the films could be controlled without any degradation in the quality of the diamond films. The tensile intrinsic stresses in the films decreased from 2.97 to 1.42 GPa when the substrate thickness increased from 1 to 10mm. This result showed that the residual stress was affected by the substrate thickness as well as by the interaction between grains. Applying of ＋50 V between the W filament and the Si substrate during deposition, the tensile intrinsic stress in the film deposited at 0 V was decreased from 2.40 GPa to 0.71 GPa. Such large decrease in the tensile intrinsic stress was due to $\beta$-SiC which acted as a buffer layer for the stress relaxation. However, the application of the large voltage above ＋200V resulted in the change of quality of the diamond film, and nearly had no effect on relaxation in the tensile intrinsic stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• 한국세라믹학회지
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• 제28권10호
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• pp.777-784
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• 1991

Diamond films have been growth by the hot-filament chemical vapor deposition (HFCVD) using CH4 and H2 gaseous mixture on the Si substrate. The experimental results indicated that the deposits were pure diamond and contained no amount of non-diamond phases such as amorphous carbon or graphite. The diamond films were deposited well at the conditions: the filament temperature of 210$0^{\circ}C$, the substrate temperature of 77$0^{\circ}C$, the CH4 concentration of 1.76%, the reactor pressure of 30 torr, and the deposition time of 7 hr. At this growth condition, the maximum deposition rate was 2 ${\mu}{\textrm}{m}$/hr. X-ray diffraction patterns and texture coefficient results showed that preferred orientation of the diamond films was {111} orientation under all experimental conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.632-635
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• 2001

Microcrystalline Si films have been deposited by using five W-wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with the film exposed to transformer couple plasma system for the modification of seed layer. W-wire filament temperature was maintained below 1600$^{\circ}C$ to avoid metal contamination by thermal evaporation at the filament. Deposition conditions were varied with H$_2$dilution ratio, with and without plasma treatment. From the Raman spectra analysis, we observed that the film crystallization was strongly influenced by the H$_2$dilution ratio and weakly depended on the distance between the wire and a substrate. We were able to achieve the crystalline volume fraction of about 70% with an SiH$_4$/H$_2$ratio of 1.3%, a wire temperature of 1514$^{\circ}C$, a substrate separation distance of 4cm, and a chamber pressure of 38 mTorr. We investigated the influence of ${\mu}$c-Si film properties by using a plasma treatment. This article also deals with the influence of the H$_2$dilution ratio in crystallization modification.