• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.93.1-93.1
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• 2010

반사방지막은 태양전지 표면에서의 광 반사를 낮춰주며, Si wafer 표면에서의 carrier의 재결합을 줄이는 passivation 역할을 한다. 이를 위한 다양한 물질이 반사방지막으로 사용된다. 단일박막은 passivation 효과가 미미하여 최근 passivation 향상에 도움이 되는 이중구조 반사방지막이 널리 연구되어지고 있다. 하지만 물질이 다양해짐에 따라 공정시간 및 비용이 늘어나고, passivation에 최적화된 물질사용이 필수적으로 요구되는 단점이 있다. 따라서 본 연구에서는 기존에 passivation 효과가 뛰어나다고 알려진 SiNx의 굴절률 가변을 통하여 이중구조를 갖는 박막을 반사방지막으로 이용하여 그 특성을 비교, 분석하였다. SiNx 이중반사방지막은 0.8 Torr~1 Torr의 압력에서 $450^{\circ}C$의 기판온도로 PECVD를 이용하여 증착되었으며 이때의 plasma power는 180mW/$cm^2$으로 고정 하였다. 굴절률 1.9 및 2.3을 갖는 가스 조성비를 이용하여 각 layer의 두께를 20/60nm, 30/50nm, 40/40nm로 가변하였다. 샘플 제작 후 Sun-Voc 측정을 통하여 implied Voc 및 효율을 측정하였다. 단일반사방지막을 사용한 샘플의 경우 608mV의 implied Voc가 측정되었으며, FF는 82.8%, 효율은 17.6%로 측정되었다. 가장 우수한 특성을 나타낸 20/60nm의 두께로 증착된 샘플의 경우 implied Voc는 625mV, FF는 84.1%, 효율은 18.3%로 우수한 결과를 나타내었다. 반사도 측정 결과 단일반사방지막은 2.27%로 높았으나 SiNx 이중구조를 이용한 반사방지막은 1.67%로 낮은 값을 확인 하여 이중구조의 반사방지막이 반사도 저감 및 passivation 효과 향상에 도움이 되는 것을 확인할 수 있었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.565-569
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• 2006

Plasma enhanced chemical vapor deposition(PECVD) is a well established technique for the deposition of hydrogenated film of silicon nitride (SiNx:H), which is commonly used as an antireflection coating as well as passivating layer in crystalline silicon solar cell. PECVD-SiNx:H films were investigated by varying the deposition and annealing conditions to optimize for the application in silicon solar cells. By varying the gas ratio (ammonia to silane), the silicon nitride films of refractive indices 1.85 - 2.45 were obtained. The film deposited at $450^{\circ}C$ showed the best carrier lifetime through the film deposition rate was not encouraging. The film deposited with the gas ratio of 0.57 showed the best carrier lifetime after annealing at a temperature of $800^{\circ}C$. The single crystalline silicon solar cells fabricated in conventional industrial production line applying the optimized film deposition and annealing conditions on large area substrate of size $125mm{\times}125mm$ (pseudo square) was found to have the conversion efficiencies as high as 17.05 %. Low cost and high efficiency silicon solar cells fabrication sequence has also been explained in this paper.

• Journal of Surface Science and Engineering
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• v.53 no.6
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• pp.271-279
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• 2020

Non-ferrous metals, widely used in the mechanical industry, are difficult to machine, particularly by drilling and tapping. Since non-ferrous metals have a strong tendency to adhere to the cutting tool, the tool life is greatly deteriorated. Diamond-like carbon (DLC) is one of the promising candidates to improve the performance and life of cutting tool due to their low frictional property. In this study, a sacrificial DLC layer is applied on the hard nitride coated drill tool to improve the durability. The DLC coatings are fabricated by controlling the acceleration voltage of the linear ion source in the range of 0.6~1.8 kV. As a result, the optimized hardness(20 GPa) and wear resistance(1.4 x 10-8 ㎣/N·m) were obtained at the 1.4 kV. Then, the optimized DLC coating is applied as an sacrificial layer on the hard nitride coating to evaluate the performance and life of cutting tool. The Vickers hardness of the composite coatings were similar to those of the nitride coatings (AlCrN, AlTiSiN), but the friction coefficients were significantly reduced to 0.13 compared to 0.63 of nitride coatings. The drilling test were performed on S55C plate using a drilling machine at rotation speed of 2,500 rpm and penetration rate of 0.25 m/rev. The result showed that the wear width of the composite coated drills were 200 % lower than those of the AlCrN, AlTiSiN coated drills. In addition, the cutting forces of the composite coated drills were 13 and 15 % lower than that of AlCrN, AlTiSiN coated drills, respectively, as it reduced the aluminum clogging. Finally, the application of the DLC sacrificial layer prevents initial chipping through its low friction property and improves drilling quality with efficient chip removal.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.735-739
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• 1999

In this study we investigated stress development and shrinkage of thickness for a single $PbTiO_3$(PT) layer prepared by sol-gel processing. Changes of microhardness for multideposited PT layers with temperatures are also monitored to understand the densification of thin films. Single PT layer shrank rapidly from room temperature to$ 220^{\circ}C$ yielding 83% of total shrinkage observed up to $500^{\circ}C$. A tensile stress of ~75MPa developed in an as-spun layer, and increased steadily beyond $130^{\circ}C$ until it reaches the maximum value of 147MPa at $250^{\circ}C$. The significant decrease of tensile stress in the film beyond $370^{\circ}C$ indicates that thermal expansion mismatch between the film and the substrate dominates the stress behavior in this temperature range. Microhardness of the multideposited coatings also increased rapidly above $300^{\circ}C$ regardless of the pyrolysis temperatures used. Large amount of perovskite phase formed in multideposited coatings after $550^{\circ}C$ may be due partly to enhanced homogeneous nucleation in the thicker coating.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.925-933
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• 1990

The possible use of bioglass,, which is one of the surface active biomaterials, as implants materials has drawn great attention due to their ability to bond to human living tissue. In the present work, the investigation was carried out to find the bonding phenomena between alumina substrate and bioglass(45S5) or fluorine-containing bioglass(45S5$.$4F), and the properties of coated bioglass. The stable bonding between alumina and bioglass was formed when heat-treated at 1150$^{\circ}C$ for 120 minutes or at 1250$^{\circ}C$ for 30 minutes for the 45S5, and at 1150$^{\circ}C$ for 30 minutes for the 45S5$.$4F. When bioglass coated alumina was heat-treated, great amount of Al was diffused into bioglass from alumina substrate. More Al was diffused into fluorine-containing bioglass than into bioglass without fluorine. At early stage of heat-tretment, the diffused alumina content was increased with the square root of time and it was also increased with the thickness of coating layer and heat-treatment temperatures. The alumina content became constant after its saturation for longer heat-treatment time. Coated bioglasses were crystallized to Na2O$.$CaO$.$3SiO2 when heat-treated at lower temperature, and to CaO$.$SiO2 at higher temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.98-102
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• 2000

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO2/Si substrate using PZT(10/90) and PZT(90/10) m7etal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structures without presence of rosette structure. It can be assumed that the lower PZT layers played a role of nucleation site for the formation of the upper PZT layer. Pb-deficient PZT phase was formed at PZT/Pt interface due to the diffusion of Pb element into a Pt bottom electrode. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6%, respectively. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered film were $7.18\muC/cm^2$ and 68.5kV/cm, respectively. Leakage current densities were increased with increasing the number of coatings, and the value of the PZT-4 film was about $7\times10-8A/cm^2$ at 0.05MV/cm.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.173-176
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• 2014

We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick $SiN_x$ anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of $40{\mu}m$ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of $60{\Omega}/sq$, a specific contact resistance (${\rho}_c$) below $10m{\Omega}{\cdot}cm^2$ could be achieved at a peak firing temperature around $700^{\circ}C$. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.200-200
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• 2009

아크이온플래이팅 기술과 DC 마그네트론 스퍼터링 기술이 결합된 하이브리드 코팅 시스템을 이용하여 STS 304와 Si 기판에 4성분계 CrAlCxN1-x 코팅을 증착하였다. 합성된 CrAlCxN1-x 코팅은 주로 유도결합형로 f구성되었다. CrAlCxN1-x 코팅의 carbon 함량이 0.17 at.%일 때 약 34 GPa을 나타내었으며 마찰계수는 carbon 함량이 0에서 1 at.%로 증가함에 따라 0.82에서 0.38까지 크게 감소하였다. 이는 코팅 표면과 steel 볼 사이에 amorphous carbon layer가 형성되어 고체윤활제로 작용한 것으로 사료된다.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.