• Journal of Welding and Joining
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• 제31권6호
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• pp.65-70
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• 2013

In joining Alumina to copper plate by Mo-Mn metallizing process, the effects of the composition of metallizing paste on the bonding strength were investigated. The bonding strength increased with increasing Mn amount in the paste up to 20% but followed by the decrease with addition of Mn. The maximum bonding strength reached 50MPa at 20%Mn when heated to $1550^{\circ}C$ for 60minute. The addition of Si to the metallizing powder increased the bonding strength of the joint by enhancing the mechanical bonding between the Alumina and the metallizing layer due to the decrease of layer viscosity with the addition of $SiO_2$. It is thought that MnO reacted with $Al_2O_3$ to yield $MnAl_2O_4$ spinel, forming a joint.

• 한국결정성장학회지
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• 제2권2호
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• pp.20-32
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• 1992

$Na_2O-CaO-MgO-Al_2O_3-SiO_2$계를 기본조성으로 하여 $Na_2O$에 $Li_2O 0.05wt%, $K_2O$를, CaO에 MgO 12.0wt%, ZnO 6.0%를 각각 치환하여 조성을 선정하였다. 기본 유리조성의 결정상은 wollastonite이고, 치환된 조성들은 diopside, diopside.tremolite의 혼정이 나타났다. $Na_2O$를 $Li_2O$로 치환한 시편은 열팽창계수가 감소하였지만 CaO를 ZnO로 치환한 시편은 열팽창 계수가 증가하였다. 곡강도에 있어서는 치환에 따라 모두 증가시켰다. 핵행성제로 $ZrO_2와 $CaF_2$를 각각 1~2wt%의 변화를 시켜본 결과 핵형성제 $ZnO_2$와 $CaF_2$가 1:1, 1:2인 시편은 $1000~1050^{\circ}C$온도에서 급격한 결정성장을 보였으며 1:2시편이 가장 낮은 열팽창 계수값을 나타냈다. 곡강도는 모두 $1000~1050^{\circ}C$의 결정화 온도 범위에서 높은 강도를 나타내었다. 결정화에 필요한 활성화 에너지는 Ozawa와 Kissinger식으로 plot하여 각각 55.24kcal/mol과 53.05kcal/mol이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.784-789
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• 2004

Bulk ZnO varistor based on Matsuoka, which varied $SiO_2$ addition has fabricated by standard ceramic process. The micro-electrode, which fabricated for investigation on degradation property of the Single Grain Boundary of ZnO varistor, has sticked by lithography semiconductor process. The values of AC degradation has measured with 150% operating voltage in varistor threshold with 120 minute in 60Hz. In here we observed V-I and V-C property in every 30minute. The operating voltage of Single Grain Boundary has shown in variable patterns in the characteristic of V-I Property. By increasing the $SiO_2$ contents, operating value has also increased and dominated on degradation proper. In EPMA analysis, we know that added $SiO_2$ was nearly distributed at the Grain Boundary. $SiO_2$ has gradually distributed in Grain Boundary condition during the process of crystal growth. It contributes to degradation depression and decision of operating voltage. We also demonstrated for using practical application and performance on distribution random loop based on V-I Properties in Single-Grain-Boundary.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.279-285
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• 1998

The $UO_2$ pellets are usually sintered under hydrogen gas atmosphere. Hydrogen gas may cause unexpected early failure of the refractory bricks in the sintering furnace. In this work, nitrogen was mixed with hydrogen to investigate the effect of nitrogen gas on a failure machanism of the refractory bricks and on the microstructure of the $UO_2$ pellet. The hydrogen-nitrogen mixed gas experiments show that the larger nitrogen the mixed gas contains, the less the refractory materials are reduced by hydrogen. The weight loss measurements at $1400^{\circ}C$ for fire clay and chamotte refractories containing high content of $SiO_2$ indicate that the weight loss rate for the mixed gas is about half of that for the hydrogen gas. Based on the thermochemical analyses, it is proposed that the weight loss is caused by hydrogen-induced reduction of free $SiO_2$ and/or $SiO_2$ bonded to $Al_2O_3$ in the fire clay and chamotte refractories. However, the retardation of the hydrogen-induced $SiO_2$ reduction rate under the mixed gas atmosphere may be due to the reduction of the surface reaction rate between hydrogen gas and refractory materials in proportion to volume fraction of nitrogen gas in the mixed gas. On the other hand, the mixed gas experiments show that the test data for $UO_2$ pellet still meet the related specification values, even if there exists a slight difference in the pellet microstructural parameters between the cases of the mixed gas and the hydrogen gas.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• 한국재료학회지
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• 제8권10호
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• pp.879-883
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• 1998

초합금의 진공정밀주조시에 진공하에서 용해한 합금을 $1000~1700^{\circ}C$로 가열한 세라믹 주형에 주입하고 난 후, 용탕이 장시간 주형안에 노출됨으로써, 주형의 고온강도가 높아야 하므로 고품위의 주형재를 사용하여 왔으나, 저품위의 값싼 소재를 사용하여 고품위의 주형과 동등한 효과를 갖게 하고자 주형내의 Silica 함량을 조절하였다. 그 결과 SiO2 첨가량이 7.7wt.%일 때, 다른 시험편에 비해 소성강도와 고온강도가 10-55%가량 증가 하였다. 따라서 일반적으로 정밀주조 주형으로 사용하는 용융알루미나와 colloidal silica의 혼합비를 제어하여 단결절 주조용 주형을 개발하였다.

• 센서학회지
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• 제13권4호
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• pp.303-308
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• 2004

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.517-523
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• 2008

The microwave dielectric properties of $LiNb_3O_8-TiO_2$ based ceramics with low firing agents, CuO, $Bi_2O_3$, $B_2O_3$, $SiO_2$, $TiO_2$, were investigated to improve the sintering condition for the LTCC system. According to the X-ray diffraction and SEM, the ceramics of $LiNb_3O_8-TiO_2$ with low firing agents showed no significant second phases within a range of experiments, and fine microstructures. By adding the low firing agents, the sintering temperature decreased from $1200^{\circ}C$ to $925^{\circ}C$. Based on the results of electrical measurements, the $LiNb_3O_8-TiO_2$ ceramics showed a promising microwave dielectric properties for LTCC applications, those are ${\varepsilon}_r$ (dielectric constant) = 44, Q f (quality factor) = 18000, and ${\tau}_f$ (the temperature coefficient of resonant frequency) = $-1.5\;ppm/^{\circ}C$.