• Title/Summary/Keyword: SiC boundary

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A study on transient liquid phase diffusion bonding of 304 stainless steel and structural carbon steels (304 스테인레스강과 구조용탄소강과의 천이액상확산접합에 관한 연구)

  • 김우열;정병호;박노식;강정윤;박세윤
    • Journal of Welding and Joining
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    • v.9 no.4
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    • pp.28-39
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    • 1991
  • The change of microstructure in the bonded interlayer and mechanical properties of the joints were investigated during Transient Liquid Phase Diffusion Bonding(TLP bonding) of STS304/SM17C and STS304/SM45C couples using Ni base amorphous alloys added boron and prepared alloy as insert metal. Main experimental results obtained in this study are as follows: 1) Isothermal solidification process was completed much faster than theoretically expected time, 14ks at 1473K temperature. Its completion times were 3.6ks at 1423K, 2.5ks at 1473K and 1.6ks at 1523K respectively. 2) As the concentration of boron in the insert metal increased, the more borides were precipitated near bonded interlayer and grain boundary of STS304 side during isothermal solidification process, its products were $M_{23}P(C,B)_6}_3)$ The formation of grain boundary during isothermal solidification process was completed at structural carbon steel after starting the solidfication at STS304 stainless steel. 4) The highest value of hardness was obtained at bonded interface of STS304 side. The desirable tensile properties were obtained from STS304/SM17C, STS304/SM45C using MBF50 and experimentally prepared insert metal with low boron concentration.

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A Study on the Fatigue Strength Evaluation of Metal Matrix Composite (금속기 복합재료의 피로강도 평가에 관한 연구)

  • 김윤해
    • Journal of Advanced Marine Engineering and Technology
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    • v.18 no.2
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    • pp.41-53
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    • 1994
  • In this paper, rotating-bending fatigue tests of the SiC-whisker- reinforced 6061-T6 aluminum alloy and 6061-T6 alumiunm alloy made by power metallurgy were carried out to investigate the fatigue characteristics of plain and notched specimens at room temperature. The fatigue mechnisms in both materials were clarified through successive surface observations using the plastic replica method. In the case of the SiC-whisker-reinforced composites, there are whisker rich and poor zones and the fatigue crack is nucleated from the end of whiskers near the boundary. On the other hand, in the case of the 6061-T6 aluminum alloy, the fatigue crack is nucleated from defects and propagates by shear. Moreover, the results were discussed based on linear notch mechanics.

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Characteristics of Molybdenum Nitride Diffusion Barrier for Copper Metallization (Cu 금속배선을 위한 Molybdenum Nitride 확산 방지막 특성)

  • Lee, Jeong-Yeop;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.6 no.6
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    • pp.626-631
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    • 1996
  • Reactive dc magnetron sputtering 법을 이용하여 증착한 molybdenum mitride 박막의 Cu 확산 방지막 특성을 조사하였다. Cu 확산 방지막으로서 molybdenum nitride 박막의 열적안정성을 관찰하기 위하여 molybdenum nitride 박막 위에 Cu를 evaporation 법으로 증착하고 진공 열처리하였다. Cu/r-Mo2N/si 구조는 $600^{\circ}C$, 30분간 열처리 시까지 안정하였다. 확산 방지막의 파괴는 $650^{\circ}C$, 30분간 열처리 시부터 격자 확산(lattice diffusion)이나 입계(grain boundary)과 결함(defect)을 통한 확산에 의해 나타나기 시작하였고, 이 때 molybdenum silicide과 copper silicide의 형성에 기인된 것으로 생각되었다. 열처리 이후 Cu/r-Mo2N/Si 사이의 상호반응이 증가하였다. 이는 Rutherford backscattering spectrometry, Auger electron spectroscopy 그리고 Nomarski microscopy 등의 분석을 통해 조사되었다.

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High rate deposition of poly-si thin films using new magnetron sputtering source

  • Boo, Jin-Hyo;Park, Heon-Kyu;Nam, Kyung-Hoon;Han, Jeon-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.186-186
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    • 2000
  • After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

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Scan Element Characteristics of Open-Ended Waveguide Array Antenna (개방형 도파관 배열안테나의 조향소자 특성)

  • Kim, Dong-Seok;Kim, Tae-Hyun;Park, Dong-Chul;Kim, Chan-Hong
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2005.11a
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    • pp.347-352
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    • 2005
  • Scan Element Pattern(SEP) and Scan Impedance(SI) concepts are used to analyze the characteristics of open-ended waveguide array, which is the representative phased array antenna element in C-band and X-band. Transmit SEP's are calculated for 15$\sim$15 subarray and SI's are obtained by applying periodic boundary conditions for a unit cell of the given array condition. CST's MWS and Ansoft's HFSS are utilized for each analysis. Some relations are reviewed between the two results, which are based on mutual coupling effects. For validation purpose, an 8$\sim$8 subarray is constructed and tested. Transmit SEP measured in MTG's far-field range shows good agreement with the calculated transmit SEP.

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Fabrication and mdchanical properties of $AC4A/SiC_p$ composites by mechanical alloying (기계적합금화에 의한 $AC4A/SiC_p$복합재료의 제조 및 기계적 특성)

  • Lee, Byung-Hun;Cho, Hyung-Jun;Lim, Young-Ho;Lee, Jun-Hee
    • Korean Journal of Materials Research
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    • v.4 no.6
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    • pp.651-661
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    • 1994
  • Utilizing Mechanical Alloy Process, that were obt,ained the results from investigated formation process of AC4A/$SiC_p$. composite material powders and mechanical properties of their extrusion materials. The obtained results are as follow conclusions. AC4A-lOwt.% $SiC_p$ powders which were mechanically alloyed at 150rpm for 420min have been obtained finely and uniformly rounded powder particals that were reached the steady state which was saturated micro hardness about tlv 230 in the range size of 1 0 ~ 2 0$\mu \textrm{m}$. EDAX analysis tests have been resulted in a little amount of I'e conrents increasing with MA times, the artifical aging of AC4A/S$SiC_p$ composite materials was obtained the hardness with solution treated at $525^{\circ}C$ for lOhrs the maximum value of Hv 230 with aging at. $170^{\circ}C$ for 1000min. The Intensity and width of X-ray diffraction pattern were decreasing and widening because of grain boundary refinement and heterogeneous strain during mechanical alloying. Tensile tests at room temperature were carried out the maximum value of 37 Kgf/$\mu \textrm{mm}^2$ with ext,rused materials, 27 Kgf/$\mu \textrm{mm}^2$ with heat treated them at $500^{\circ}C$.

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Mechanism of Crack Formation in Pulse Nd YAG Laser Spot Welding of Al Alloys (Al합금 펄스 Nd:YAG 레이저 점 용접부의 균열 발생기구)

  • Ha, Yong Su;Jo, Chang Hyeon;Gang, Jeong Yun;Kim, Jong Do;Park, Hwa Sun
    • Journal of Welding and Joining
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    • v.18 no.2
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    • pp.213-213
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    • 2000
  • This study was performed to investigate types and formation mechanism of cracks in two Al alloy welds, A5083 and A7NO1 spot-welded by pulse Nd: YAG laser, using SEM, EPMA and Micro-XRD. In the weld zone, three types of crack were observed: center line crack($C_{C}$), diagonal crack($C_{D}$), and U shape crack($C_{U}$). Also, HAZ crack($C_{H}$), was observed in the HAZ region, furthermore, mixing crack($C_{M}$), consisting of diagonal crack and HAZ crack was observed.White film was formed at the hot crack region in the fractured surface after it was immersed to 10%NaOH water. In the case of A5083 alloy, white films in C crack and $C_D crack region were composed of low melting phases, Fe₂Si$Al_8$ and eutectic phases, Mg₂Al₃ and Mg₂Si. Such films observed near HAZ crack were also consist of eutectic Mg₂Al₃. In the case of A7N01 alloy, eutectic phases of CuAl₂, $Mg_{32}$ (Al,Zn) ₃, MgZn₂, Al₂CuMg and Mg₂Si were observed in the whitely etched films near $C_{C}$ crack and $C_{D}$ crack regions. The formation of liquid films was due to the segregation of Mg, Si, Fe in the case of A5083 alloy and Zn, Mg, Cu, Si in the case of A7N01 aooly, respectively.The $C_{D}$ and $C_{C}$ cracks were regarded as a result of the occurrence of tensile strain during the welding process. The formation of $C_{M}$ crack is likely to be due to the presence of liquid film at the grain boundary near the fusion line in the base metal as well as in the weld fusion zone during solidification. The $C_{U}$ crack is considered a result of the collapsed keyhole through incomplete closure during rapid solidification. (Received October 7, 1999)

Effect of Additives and Cooling Rates on the Electrical Resistivity of BaTiO3 Ceramics (I) (BaTiO$_3$ 세라믹스의 전기저항에 미치는 첨가제와 냉각속도의 영향(I) - TiO$_2$, SiO$_2$ 및 Al2O$_3$ 단미첨가 -)

  • 염희남;하명수;이재춘;정윤중
    • Journal of the Korean Ceramic Society
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    • v.28 no.9
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    • pp.661-666
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    • 1991
  • Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were studied by varying cooling rates and additives such as TiO2, SiO2 and Al2O3. The basic composition of the BaTiO3 ceramics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Unlike the additives of SiO2 and Al2O3, an addition of 2 mol% TiO2 to the basic composition was effective to control the grain size of the fired specimens. The room temperature resistivity and the temperature coefficient of resistance for the specimen of this particular compostion were measured as about 102 ohm.cm and 16.5%/$^{\circ}C$, respectively. The observed grain boundary phase of the sample with Al2O3 additive was BaTi3O7, while that of the samples with SiO2 additive was confirmed as BaTiSiO5.

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Effect of the Tertiary Recrystallization on the Magnetic Properties of High Silicon Iron (고규소철 강판의 자기적 특성에 미치는 3차 재결정의 영향)

  • Koo, J.M.
    • Journal of the Korean Society for Heat Treatment
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    • v.10 no.4
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    • pp.246-254
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    • 1997
  • The 6.5wt %Si-Fe alloy sheets were made by the twin roll process. The magnetic properties and microstructures of sheets annealed in the sulfur atmosphere were studied. In the as-prepared sheet, non-oriented columnar grains about $10{\mu}m$ in diameter were observed, which grew from the surface to the inner part of the sheet. When the annealing temperature was around $700^{\circ}C$, the primary recrystallization was formed around the middle part of the sheet thickness, and the grain size increased with increasing annealing temperature. At the annealing temperature of $900^{\circ}C$, the grain size became $30{\sim}40{\mu}m$. Around the annealing temperature, the motive force of the grain growth is the grain boundary energy. However, above $1000^{\circ}C$ the surface energy played an important role in the observed grain growth. When the sheet were annealed at $1200^{\circ}C$, the grains whose (100) planes were paralled to the thin plate surface grew, and all sheet surfaces were covered with these grains after 1 hour annealing. This phenomenon is called tertiary recrystallization. A difference in surface energy between (100) and (110) surfaces provides a driving force for growth of tertiary grains. The coercive force was 0.27 mOe and the AC core loss $W_{12/50}$ was 0.38w/kg for the 6.5wt%Si-Fe alloy.

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Effects of Bainitic Transformation Temperature and Stress State on the Formability of C-Mn-Si TRIP Steels (C-Mn-Si계 변태유기소성강의 성형성에 미치는 베이나이트 변태온도 및 응력상태의 영향)

  • Jun H. S.;Oh J. H.;Park C. G.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2001.05a
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    • pp.156-160
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    • 2001
  • The effects of TRansformation Induced Plasticity(TRIP) phenomena on the plastic deformation of 0.2C-1.5Si-1.5Mn multiphase steels have been investigated at various heat treatment and stress conditions. In order to estimate the formability, the hole expansion(HE) tests and the tensile tests were carried out. The formability evaluated from the uni-axial tensile tests was quite different from the formability measured from multi-axial HE-tests. Consequently, the formability in the multi-axial stress state decreased due to the extinction of the retained austenite relatively at earlier deformation stage and the production of irregular α' martensite. However, the defects of TRIP-steels were initiated exactly at the boundary between transformed martensite and ferrite matrix regardless of stress state. In addition, new experimental formula is proposed in order to predict the multi-axial formability of the TRIP steels from the results of uniaxial tensile test.

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