• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.9-14
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• 1986

$\beta$-SiC bonded SiC bodies were prepared from various conditions such as several compositions of(Si+C)/$\alpha$ -SiC ratio and different firing schedules and were respectively investigated compressive strength MOR and mi-crostructure. One firing schedule which produced the specimens that had $\beta$-SiC neck form with the highest strength was selected and experimented by each firing temperature. results obtained are as follows : 1) The amount of (Si+C) for th highest MOR of SiC-(Si+C) sintered body is 20wt% 2) By adding 20wt% content of (Si+C) and heating up to 1, 500 with soaking 3hrs respectively at 1,150$^{\circ}C$ 1,250$^{\circ}C$ 1,350$^{\circ}C$ and 1,400$^{\circ}C$ the highest MOR of fired specimen was resulted and its microstructure of ma-trix was composed of close $\beta$-SiC neck. 3) Microstructure of $\beta$-SiC were different greatly from each other by firing time and/or quantity of adding mix-ture and it was confirmed that they were composed of neck particle-like and heterogeneous texture. 4)$\beta$-SiC synthesis proceed rapidly at the temperature between 1,250$^{\circ}C$ and 1,350$^{\circ}C$ 5) All of the properties of 85 SiC-20(Si+C) specimen improved according to increasing temperature above 1,350$^{\circ}C$.

• Journal of Welding and Joining
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• v.14 no.4
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• pp.99-108
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• 1996

The microstructure and bond strength are examined on the SiC/SiC and SiC/mild steel joints brazed by the Ag-Ti based alloys with different Ti contents. In the SiC/SiC brazed joints, the thickness of the reaction layers at the bond interface and the Ti particles in the brazing alloy matrices increase with Ti contents. When Ti is added up to 9 at% in the brazing alloy. $Ti_3SiC_2$ phase in addition to TiC and $Ti_5Si_3$ phase is newly created at the bond interface and TiAg phase is produced from peritectic reaction in the brazing alloy matrix. In the SiC/mild steel joints brazed with different Ti contents, the microstructure at the bond interface and in the brazing alloy matrix near SiC varies similarly to the case of SiC/SiC brazed joints. But, in the brazing alloy matrix near the mild steel, Fe-Ti intermetallic compounds are produced and increased with Ti contents. The bond strengths of the SiC/SiC and SiC/mild steel brazed joints are independent on Ti contents in the brazing alloy. There are no large differences of the bond strength between SiC/SiC and SiC/mild steel brazed joints. In the SiC/mild steel brazed joints, Fe dissolved from the mild steel does not affect on the bond strength of the joints. Thermal contraction of the mild steel has nearly no effects on the bond strength due to the wide brazing gap of specimens used in the four-point bend test. The brazed joints has the average bond strength of about 200 MPa independently on Ti contents, Fe dissolution and joint type. Fracture in four-point bend test initiates at the interface between SiC and TiC reaction layer and propagates through SiC bulk. The adhesive strength between SiC and TiC reaction layer seems to mainly control the bond strength of the brazed joints.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.376-380
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• 2003

The microstructure and the mechanical properties of RS-SiC and RS-$SiC_f/SiC$ materials have been investigated in conjunction with the content of residual silicon and porosity. The mechanical properties of RS-SiC materials suffered from the thermal exposure were also examined. RS-SiC based materials bave been fabricated using the complex matrix slurry with different composition ratios of SiC and C panicles. The characterization of RS-SiC based materials was investigated by means of SEM, EDS ~d three point bending test. Based on the mechanical property-microstructure correlation, the high temperature applicability of RS-SiC based materials was discussed.

• Composites Research
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• v.32 no.3
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• pp.148-157
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• 2019

In this study, $C_f/SiC$, $SiC_f/SiC$ and $C_f-SiC_f/SiC$ ceramic composites reinforcing carbon fiber, SiC fiber and hybrid fiber were fabricated by hybrid TGCVI and PIP process. After the thermal shock cycle, 3-point bending and Oxy-Acetylene torch test, their mechanical behavior, oxidation and erosion resistance were evaluated. The $C_f/SiC$ composite showed a decrease in mechanical property along with increasing temperature, a pseudo-ductile fracture mode and a large quantity of erosion. The $SiC_f/SiC$ composite exhibited stronger mechanical property and lower erosion rate compared to the $C_f/SiC$, but brittle fracture mode. On the other hand, hybrid type of $C_f-SiC_f/SiC$ composite gave the best mechanical property, more ductile failure mode than the $SiC_f/SiC$, and lower erosion rate than the $C_f/SiC$. During the Oxy-Acetylene torch test, the $SiO_2$ formed by reaction of the SiC matrix with oxygen prevented further oxidation or erosion of the fibers for $C_f-SiC_f/SiC$ and $SiC_f/SiC$ composites particularly. In conclusion, if a hybrid composite with low porosity is prepared, this material is expected to have high applicability as a high temperature thermo-structural composite under high temperature oxidation atmosphere by improving low mechanical property due to the oxidation of $C_f/SiC$ and brittle fracture mode of $SiC_f/SiC$ composite.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.197-206
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• 1997

A SiC epilayer on the 6H-SiC crystal substrate was grown by chemical vapor deposition (CVD). The crystal structure of the SiC epilayer was investigated by using the X-ray diffraction patterns and the Roman scattering spectroscopy. The SiC epilayer on the 6H-SiC substrate was grown to be homoepilayer by CVD. In order to distinguish a certain SiC polytype mixed in the SiC crystal grown by the modified Lely method, we have calculated the X-ray diffraction intensities and Brags angles of the typical SiC crystal powders. By comparing the measured X-ray diffraction pattern with the calculated ones, it was identified that the SiC crystal grown by the modified Lely method was the 6H-SiC crystal mixed some 15R-SiC.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.152-157
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• 2000

Si3N4/SiC nanocomposite ceramics containing 5 wt%dispersed SiC particles were prepared by gas-pressure-sintering at 200$0^{\circ}C$ under nitrogen atmosphere. SiC particles with average sizes of 0.2 and 0.5${\mu}{\textrm}{m}$ were used, and the effect of the SiC particle size on the microstructure was investigated. The addition of SiC particles effectively suppressed the growth of the Si3N4 matrix grains. The effect of grain growth inhibition was higher in the nanocomposites dispersed with fine SiC. SiC particles were dispersed uniformly inside Si3N4 matrix grains and on grain boundaries. When the fine SiC particles were added, large fraction of the SiC particles was trapped inside the grains. On the other hand, when the large SiC particles were added, most of the SiC particles were located on grain boundaries. Typically, the fraction of SiC particles located at grain boundaries was higher in the specimen prepared from $\beta$-Si3N4 than in the specimen prepared from $\alpha$-Si3N4.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.04a
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• pp.102-105
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• 2005

The mechanical properties of $SiC_f/SiC$ composites reinforced with continuous SiC fiber have been investigated in conjunction with the detailed analysis of their microstructures. Especially, the effect of test temperature on the characterization of $SiC_f/SiC$ composites was examined. In this composite system, a braiding Hi-Nicalon SiC fibric was selected as a reinforcement. $SiC_f/SiC$ composites have been fabricated by the reaction sintering process, using the complex matrix slurry with a constant composition ratio of SiC and C particles. The characterization of $RS-SiC_f/SiC$ composites was investigated by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the high temperature applicability of $RS-SiC_f/SiC$ composites was discussed.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.535-543
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• 1997

The surface of SiC particles were partially oxidized to produce SiO2 layers on the SiC particles to prepare Al2O3/SiC composite by formation of mullite bonds between the grains of Al2O3 and SiC during sintering at 1$600^{\circ}C$. This process is considered to enable the sintering of Al2O3/SiC composite at lower temperature and also to relieve the stress, produced by thermal expansion mismatch between Al2O3 and SiC. In fact, Al2O3/SiC composite prepared by oxidation of SiC was observed to be more effectively sintered and densified at lower temperature. Maximum density, flexural strength and microhardness were obtained with 5.65 vol% of mullite content in Al2O3/SiC composite.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2012.10a
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• pp.110-114
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• 2012

We studied on the nondestructive evaluation of the elastic wave signal of SiC ceramics and SiC/SiC composite ceramics under monotonic tensile loading. The elastic wave signal of cross and unidirectional SiC/SiC composite ceramics were obtained by pencil lead method and bending test. It was applied for the time-frequency method which used by the discrete wavelet analysis algorithm. The time-frequency analysis provides time variation of each frequency component involved in a waveform, which makes it possible to evaluate the contribution of SiC fiber frequency. The results were compared with the characteristic of frequency group from SiC slurry and fiber. Based on the results, if it is possible to shift up and design as a higher frequency group, we will can make the superior material better than those of exiting SiC/SiC composites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.