• Composites Research
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• 제25권6호
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• pp.172-177
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• 2012

저저항 Si-SiC 소결체 제조를 위해 ${\alpha}$-SiC에서 조성과 C의 양을 변화시키면서 반응소결 특성을 고찰하였다. 시료준비는 정수압으로 성형체를 제조하였고, 용융Si 반응소결을 통해 시험편을 준비하였다. 반응소결체의 미세구조, 기계적 특성 및 전기저항 분석 결과 용융Si과 반응 후 미립의 ${\beta}$-SiC가 생성되었고, 치밀한 소결체를 형성하였다. 미립 ${\beta}$-SiC 생성량은 카본 양 에 따라 증가하였다. 그리고 C함량 10wt%이내에서 기계 R전기저항특성은 입도조성 영향이 크고 카본 함량 10wt%이상에서는 상전이 반응의 영향이 큼을 알 수 있었다.

• 한국세라믹학회지
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• 제36권8호
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• pp.799-804
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• 1999

Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.

• 마이크로전자및패키징학회지
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• 제25권3호
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• pp.21-30
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• 2018

Driven by the recent energy saving trend, conventional silicon based power conversion modules are being replaced by modules using silicon carbide. Previous papers have focused mainly on the electrical advantages of silicon carbide semiconductors that can be used to design switching devices with much lower losses than conventional silicon based devices. However, no systematic study of their thermomechanical reliability in power conversion modules using finite element method (FEM) simulation has been presented. In this paper, silicon and silicon carbide based power devices with three-phase switching were designed and compared from the viewpoint of thermomechanical reliability. The switching loss of power conversion module was measured by the switching loss evaluation system and measured switching loss data was used for the thermal FEM simulation. Temperature and stress/strain distributions were analyzed. Finally, a thermal fatigue simulation was conducted to analyze the creep phenomenon of the joining materials. It was shown that at the working frequency of 20 kHz, the maximum temperature and stress of the power conversion module with SiC chips were reduced by 56% and 47%, respectively, compared with Si chips. In addition, the creep equivalent strain of joining material in SiC chip was reduced by 53% after thermal cycle, compared with the joining material in Si chip.

• 한국세라믹학회지
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• 제45권7호
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• pp.430-437
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• 2008

Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1700 to $1850^{\circ}C$ using SiC, silicon (Si), and three different carbon (C) sources, including carbon black, phenol resin, and xylene. The effects of the Si:C ratio and carbon source on porosity and strength were investigated as a function of sintering temperature. Porous SBSC ceramics fabricated from phenol resin showed higher porosity than the others. In contrast, porous SBSC ceramics fabricated from carbon black showed better strength than the others. Regardless of the carbon source, the porosity increased with decreasing the Si:C ratio whereas the strength increased with increasing the Si:C ratio.

• 한국재료학회지
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• 제23권12호
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• pp.702-707
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• 2013

High-quality ${\beta}$-silicon carbide (SiC) coatings are expected to prevent the oxidation degradation of carbon fibers in carbon fiber/silicon carbide (C/SiC) composites at high temperature. Uniform and dense ${\beta}$-SiC coatings were deposited on carbon fibers by low-pressure chemical vapor deposition (LP-CVD) using silane ($SiH_4$) and acetylene ($C_2H_2$) as source gases which were carried by hydrogen gas. SiC coating layers with nanometer scale microstructures were obtained by optimization of the processing parameters considering deposition mechanisms. The thickness and morphology of ${\beta}$-SiC coatings can be controlled by adjustment of the amount of source gas flow, the mean velocity of the gas flow, and deposition time. XRD and FE-SEM analyses showed that dense and crack-free ${\beta}$-SiC coating layers are crystallized in ${\beta}$-SiC structure with a thickness of around 2 micrometers depending on the processing parameters. The fine and dense microstructures with micrometer level thickness of the SiC coating layers are anticipated to effectively protect carbon fibers against the oxidation at high-temperatures.

• 산업기술연구
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• 제6권
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• pp.13-17
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• 1986

The effect of supersaturation on morphology of silicon carbide by chemical vapor deposition using $CH_3SiCl_3-H_2$ gas mixture system was investigated. The experimental results show that the final structure of silicon carbide deposits is coarser as total pressure increases or ${\alpha}$-ratio decreases. It is believed because supersataration of Si-source decreases as total pressure increases or ${\alpha}$-ratio decreases.

• 폴리머
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• 제38권6호
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• pp.782-786
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• 2014

세라믹 방열 복합체의 특성 비교를 위해 casting method로 제작하였으며, 이들의 광학적 이미지와 단면 FE-SEM 분석을 실시하였다. 각각의 복합체의 열전도성 특성을 비교 분석하였으며, silicon carbide(SiC)의 분산도 문제를 해결하기 위해 wetting process를 도입하여 SiC/epoxy 복합체를 제작하였다. 기존의 방법에서 발견된 복합체 내공극과 분산도 문제가 wetting process를 통해 향상되었으며, 충전제 함량에 따른 열전도성 특성을 분석하였다. SiC 복합체의 함량에 따른 공극률 해석을 통해 70 wt% SiC 복합체에서 가장 높은 열전도도 값을 보였으며, 이들의 단면 FE-SEM 분석을 통해 복합체 내의 충전제 분산도를 확인하였다.

• Journal of Power Electronics
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• 제13권4호
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• 한국세라믹학회지
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• 제28권6호
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• pp.429-436
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• 1991

Silicon carbide has been grown by a chemical vapor deposition (CVD) technique using CH3SiCl3 and H2 gaseous mixture onto a graphite substrate. Based on the thermodynamic equilibrium studies and the suggestion that the deposition rate of SiC is controlled by surface reaction theoretical kinetic equation for CVD of silicon carbide has been proposed. The proposed theoretical kinetic equation for CVD of silicon carbide agreed well with the experimental results for the variation of the deposition rate as a function of the partial pressure of reactant gases. The Vikers microhardness of the SiC layer was about 3000∼3400 kg/$\textrm{mm}^2$ at room temperature.

• 한국분말재료학회지
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• 제21권6호
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• pp.467-472
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• 2014

RBSC (reaction-bonded silicon carbide) represents a family of composite ceramics processed by infiltrating with molten silicon into a skeleton of SiC particles and carbon in order to fabricate a fully dense body of silicon carbide. RBSC has been commercially used and widely studied for many years, because of its advantages, such as relatively low temperature for fabrication and easier to form components with near-net-shape and high relative density, compared with other sintering methods. In this study, RBSC was fabricated with different size of SiC in the raw material. Microstructure, thermal and mechanical properties were characterized with the reaction-sintered samples in order to examine the effect of SiC size on the thermal and mechanical properties of RBSC ceramics. Especially, phase volume fraction of each component phase, such as Si, SiC, and C, was evaluated by using an image analyzer. The relationship between microstructures and physical properties was also discussed.