• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.832-838
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• 1995

The densifying behavior of ultrafine amorphous Si3N4 (about 20 nm)-$\beta$-SiC (about 40~80 nm) powders (O2 : 1.3~15wt%, 0$700^{\circ}C$ within 15 sec and then immediately cooled and held at 135$0^{\circ}C$ for 10 min in N2 atmosphere without resorting to additives using a Xe image heating apparatus. Using an ultrafine pure Si3N4 powder with particle size less than 30nm, further more, mixed with an appropriate amount of $\beta$-SiC, was found to be advantageous to obtain uniform and homogeneous microstructure. In addition, ultrafine Si3N4 powders were also proved to be effective as sintering additive on densifying large sized Si3N4 powder compacts.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.190.1-190.1
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• 2015

Graphite has excellent mechanical and physical properties. It is known to advanced materials and is used to materials for molds, thermal treatment of furnace, sinter of diamond and cemented carbide tool etc. SiC materials are coated on the surface and holes of graphite to protect particles emitted from porous graphite with 5%~20% porosity and make graphite hard surface. SiC materials have high durability and thermal stability. Thermal CVD method is widely used to manufacture SiC thin films but high cost of machine investment and production are required. SiC thin films manufactured by Si reaction liquid and vapore with carbon are effective because of low cost of machine and production. SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si materials are evaporated to the graphite surface in about $10^{-2}$ torr and high temperature. Si materials are melted in $1410^{\circ}C$. Si vapor is infiltrated into the surface hole of porous graphite and $Si_xC_y$ compound is made. $Si_x$ component is proportional to the Si vapor concentration. Si diffusion coefficient is estimated from quadratic equation obtained by Fick's second law. The steady stae is assumed. Si concentration variation for the depth from graphite surface is fitted to quadratic equation. Diffusion coefficient of Si vapor is estimated at about $10^{-8}cm^2s^{-1}$.

• Journal of the Korean Society of Safety
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• v.33 no.1
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• pp.1-6
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• 2018

The effects of the fiber direction, specimen size and temperature on the compressive strength of carbon fiber reinforced silicon carbide composite (C/SiC composite) manufactured by liquid silicon infiltration(LSI) is investigated. Tests were conducted in accordance with ASTM C 695 at room temperature and elevated temperatures. Experiments are conducted with two different specimens considering grain direction. With grain (W/G) specimens have a carbon fibers parallel to the load direction, but across grain (A/G) specimens have a perpendicular carbon fibers. To verify the specimen size effect of C/SiC composite, two types of specimens are manufactured. One has a one to two ratio of diameter to height and the other has a one to one ratio. The compressive strength of C/SiC composite increased as temperature rise. As specimens are larger, compressive strength of A/G specimens increased, however compressive strength of W/G decreased.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.181-184
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• 2006

Nano Infiltration Transient Eutectic Phase - Silicon Carbide (NITE-SiC) and $SiC_f/SiC$ composite have been fabricated by a Hot Pressing (HP) process, using SiC powder with an average size of about 30nm. Alumina ($Al_2O_3$) and Yttria ($Y_2O_3$) were used for additives materials. These mixed powders were sintered at the temperature a of $1300^{\circ}C$, $1650^{\circ}C$, $1800^{\circ}C$ and $1900^{\circ}C$ under an applied pressure of 20MPa. And unidirection and two dimension woven structures of $SiC_f/SiC$ composites were prepared starting from Tyranno SA fiber. Densification of microstructure gives an effect to density. Specially, Densification Mechanism basically is important from the sintering which use the HP. In this study, the densification of NITE-SiC and $SiC_f/SiC$ composite mechanism by a press displacement appears investigated. The mechanism on the densification of each sintering temperature was investigated. The each step is shows a with each other different mechanism quality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.409-412
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• 2004

Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10% $N_2O$ nitrided oxidation and PECVD deposition. The reverse characteristics of the SiC SBD with various oxide field plate were investigated.

• Korean Journal of Optics and Photonics
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• v.33 no.5
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• pp.218-229
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• 2022

We have investigated reliable inspection methods for finding the defects generated during the manufacturing process of lightweight, large-aperture satellite telescope mirrors using silicon carbide, and we have measured the basic physical properties of the mirrors. We applied the advanced ceramic material (ACM) method, a combined method using liquid-silicon penetration sintering and chemical vapor deposition for the carbon molded body, to manufacture four SiC mirrors of different sizes and shapes. We have provided the defect standards for the reflectors systematically by classifying the defects according to the size and shape of the mirrors, and have suggested effective nondestructive methods for mirror surface inspection and internal defect detection. In addition, we have analyzed the measurements of 14 physical parameters (including density, modulus of elasticity, specific heat, and heat-transfer coefficient) that are required to design the mirrors and to predict the mechanical and thermal stability of the final products. In particular, we have studied the detailed measurement methods and results for the elastic modulus, thermal expansion coefficient, and flexural strength to improve the reliability of mechanical property tests.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.1-6
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• 2022

In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.232-236
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• 2010

Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due to their light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employed classical molecular dynamics simulations using Tersoff's potential to investigate the elastic constants of the SiC crystal at high temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and the elastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elastic deformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as applied the high strain over $1,000^{\circ}C$. Also the elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa as increased the temperature to $1,250^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.911-916
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• 1998

By using {{{{ { { {Y }_{3 }Al }_{5 }O }_{12 } }} (YAG) and SiO2 as sintering additives the effect of the composition of sintering ad-ditives on microstructure and mechanical properties of the hog-pressed and subsequently annealed SiC ma-terials were investigated. Microstructures of sintered and annealed materials were strongly dependent onthe composition of sintering additives. The average diameter and volume fraction of elongated grains in an-nealed materials increased with the SiO2/YAg ratio while the fracture toughness increased with the SiO2/YAg ratio. The average MPa.{{{{ { m}^{1/2 } }} respectively. Typical strength and fracture toughness of an annealed material with SiO2/YAg ra-tionof 0.67 were 371 MPa and 5.6 MPa.{{{{ { m}^{1/2 } }} respectively.