• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.62-72
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• 1996

The interface formation and reaction-product morphology between SiC and thin metal films were studied at temperatures between 550 and $1450^{\circ}C$ for various times. The typical reaction layer sequence was CoSi/CoSi+C/CoSi/CoSi+C/ $\cdots$ /SiC reaction at 1050 and $1250^{\circ}C$ for 2 h, while $Ni_2Si/Ni_2Si+C/Ni_2Si/Ni_2Si+C/ {\cdots} /SiC$ at 950 and 105$0^{\circ}C$ for 2 h. Carbon precipitated preferentially on the outer surface and crystallized as graphite above $1450^{\circ}C$ for SiC/Co reaction zone and $1250^{\circ}C$ for SiC/Ni. The mechanism of the periodic band structure formation with carbon precipitation behaviour was discussed in terms of thermodynamic considerations.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.535-543
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• 1997

The surface of SiC particles were partially oxidized to produce SiO2 layers on the SiC particles to prepare Al2O3/SiC composite by formation of mullite bonds between the grains of Al2O3 and SiC during sintering at 1$600^{\circ}C$. This process is considered to enable the sintering of Al2O3/SiC composite at lower temperature and also to relieve the stress, produced by thermal expansion mismatch between Al2O3 and SiC. In fact, Al2O3/SiC composite prepared by oxidation of SiC was observed to be more effectively sintered and densified at lower temperature. Maximum density, flexural strength and microhardness were obtained with 5.65 vol% of mullite content in Al2O3/SiC composite.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1114-1118
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• 2000

Ti 및 C 입자로 이루어진 다공질 성형체에 용융 Si의 침윤 및 반응으로 새로운 Ti$_3$SiC$_2$합성공정이 개발되었다. 용융 Si 침윤에 의한 Ti$_3$SiC$_2$합성공정에서는 이제까지 연구된 합성방법 보다 넓은 조성 범위에서 Ti$_3$SiC$_2$의 합성이 이루어졌다. 용융 Si을 활성 매질로 사용한 Ti$_3$SiC$_2$의 합성에서는 성형체 조성, 원료 입자 크기 및 침윤되는 용융 Si의 양에 따라 합성되는 상 및 각 합성상의 양이 다르게 나타났다. Ti:Si:C=3:1:6 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$상이 합성되었으며, 일부 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$, TiC 및 SiC가 함께 합성되었다. 작은 Ti 입자로 이루어진 성형체를 사용하여 합성한 시편에서 Ti$_3$SiC$_2$상의 합성이 용이하게 이루어졌으며, 성형체 조성 및 침윤되는 Si의 양이 화학양론적으로 Ti$_3$SiC$_2$에 근접한 조성을 갖는 시편에서 Ti$_3$SiC$_2$를 높은 수율로 합성할 수 있었다.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1252_1253
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.97[%], 74.62[%], 77.99[%] and 72.61[%] respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of ZrO2 phase. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are $4.57{\times}10^{-1}$, $2.13{\times}10^{-1}$, $1.53{\times}10^{-1}$ and $6.37{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater above 1000[$^{\circ}C$].

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.352-357
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% TiB$_2$ and using 61vo1.% SiC - 39vo1.% WC powders with the liquid forming additives of 12wt% $Al_2$O$_3$＋Y$_2$O$_3$ by pressureless annealing at 180$0^{\circ}C$ for 4 hours. Reactions between SiC and transition metal TiB$_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), TiB$_2$ and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-TiB$_2$, and SiC(2H), WC and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-WC composites. $\beta$\$\longrightarrow$$\alpha$-SiC phase transformation was ocurred on the SiC-TiB$_2$, but $\alpha$\$\longrightarrow$$\beta$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the vicker's hardness, the flexural strength and the fracture toughness showed respectively value of 96.2%, 13.34GPa, 310.19Mpa and 5.53Mpaㆍml/2 in SiC-WC composites. The electrical resistivity of the SiC-TiB$_2$ and the SiC-WC composites is all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to 50$0^{\circ}C$. 2.64${\times}$10-2/$^{\circ}C$ of PTCR of SiC-WC was higher than 1.645${\times}$10-3/$^{\circ}C$ of SiC-TiB$_2$ composites.posites.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.392-398
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• 2014

$Al_2O_3$-SiC composites reinforced with SiC whisker ($SiC_w$) were fabricated using three different methods. In the first, $Al_2O_3-SiC_w$ starting materials were used. In the second, $Al_2O_3-SiC_w$-SiC particles ($SiC_p$) were used, which was intended to enhance the mechanical properties by $SiC_p$ reinforcement. In the third method, reaction-sintering was used with mullite-Al-C-$SiC_w$ starting materials. After hot-pressing at $1750^{\circ}C$ and 30 MPa for 1 h, the composites fabricated using $Al_2O_3-SiC_w$ and $Al_2O_3-SiC_w-SiC_p$ showed strong mechanical properties, by which the effects of reinforcement by $SiC_w$ and $SiC_p$ were confirmed. On the other hand, the mechanical properties of the composite fabricated by reaction-sintering were found to be inferior to those of the other $Al_2O_3$-SiC composites owing to its relatively lower density and the presence of ${\gamma}-Al_2O_3$ and ${\gamma}-Al_{2.67}O_4$. The greatest hardness and $K_{1C}$ were 20.37 GPa for the composite fabricated using $Al_2O_3-SiC_w$, and $4.9MPa{\cdot}m^{1/2}$ using $Al_2O_3-SiC_w-SiC_p$, respectively, which were much improved over those from the monolithic $Al_2O_3$.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.158-163
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• 2000

Six different SiC ceramics with SiO2-Re2O3 (Re=Yb, Er, Y, Dy, Gd, Sm) as sintering additives have been fabricated by hot-pressing the SiC-Re2Si2O7 compositions at 1850$^{\circ}C$ for 2 hr under a pressure of 25 MPa. The room temperature strneth and the fracture toughness of the hot-pressed ceramics were characterized and compared with those of the ceramics sintered with YAG (Y3Al5O12). Five SiC ceramics (Re=Yb, Er, Y, Dy, Gd) investigated herein showed sintered densities higher than 94% of theoretical. Tthe SiC-Re2Si2O7 compositions showed lower strength and comparable toughness to those from SiC-YAG composition, owing to the chemical reaction between SiO2 and SiC during sintering. SiC ceramics fabricated from a SiC-Y2Si2O7 composition showed the best mechanical properties of 490 MPa and 4.8 MPa$.$m1/2 among the compositions investigated herein.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.413-419
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• 2002

Particulate composites of $Al_2O_3$/TiC/SiC, $Al_2O_3$/TiC and $Al_2O_3$/SiC have been fabricated by hot pressing and their R-curve behaviors and mechanical properties were investigated. $Al_2O_3$ containing 30 vol% TiC particles showed higher toughness by 8% than that for monolithic alumina and its fracture strength was increased significantly by approximately 30%. On the other hand, the addition of 30 vol% SiC of $3{\mu}m$ in $Al_2O_3$ decreased the fracture strength slightly but induced a rising R-curve behavior owing to the strong crack bridging of SiC particles. In case of $Al_2O_3$/TiC/SiC, arising R-curve behavior was also observed and the fracture toughness reached 6.6 MPa${\cdot}\sqrt{m}$ at the crack length of $1000{\mu}m$, which was lower than that of $Al_2O_3$/SiC, however, while the fracture strength was higher by about 20%. The fracture toughness seemed to be decreased as smaller TiC particles roughened the SiC interface and pullout of the SiC particles for crack bridging became less active.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.48-53
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• 2002

$Al_2O_3-SiC$ and $Al_2O_3-SiC$-TiC composite powders were prepared by SHS process using $SiO_2,\;TiO_2$, Al and C as raw materials. Aluminum powder was used as reducing agent of $SiO_2,\;TiO_2$ and activated charcoal was used as carbon source. In the preparations of $Al_2O_3-SiC$, the effect of the molar ratio in raw materials, compaction pressure, preheating temperature and atmosphere were investigated. The most important variable affecting the synthesis of $Al_2O_3-SiC$ was the molar ratio of carbon. Unreactants remained in the product among all conditions without compaction. The optimum condition in this reaction was $SiO_2$: Al: C=3: 5: 5.5, 80MPa compaction pressure under Preheating of $400^{\circ}C$ with Ar atmosphere. However there remains cabon in the optimum condition. The effect of $TiO_2$ as additive was investigated in the preparations of $Al_2O_3-SiC$. As a result of $TiO_2$ addition, $Al_2O_3-SiC$-TiC composite powder was prepared. The $Al_2O_3$ powder showed an angular type with 8 to $15{\mu}m$, and the particle size of SiC powder were 5~$10{\mu}m$ and TiC powder were 2 to $5{\mu}m$.