• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.271-271
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• 2010

고효율 실리콘 태양전지를 제작하기 위하여 surface passivation, 레이저와 lithography기술들이 연구되어 지고 있다. 결정질 실리콘 태양전지의 기판의 두께가 점점 얇아지면서 surface-to-volume 비율이 증가되어 surface passivation은 매우 중요하다. surface passivation은 크게 2가지 방법으로 진행되고 있으다. 첫 번째는 Si의 dangling bond의 passivation과 surface recombination process 제어에 기초를 두고 있다. 일반적으로 박막을 이용한 실리콘 passivation은 $SiO_2$, SiN, a-Si, $Al_2O_3$박막 4가지가 이용되어 왔다. 본 연구에서는 p-type SoG기판위에 원자층 증착법(ALD)을 이용하여 $Al_2O_3$박막의 negative fixed charge의 internal electric field로 surface passivation을 연구하였다. TMA와 $H_2O/O_3$을 사용하여 ALD $Al_2O_3$를 10~30nm두께를 갖도록 증착하였다. 표면 처리 조건, $Al_2O_3$박막 두께, ALD 공정 조건과 후열처리등에 따른 실리콘의 특성, carrier lifetime변화를 측정하여 효과적인 field induced passivation을 제시하고자 한다.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.459-465
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• 1993

By making the inter-metal PECVD $SiO_2$ as a Si rich oxide under the SOG, the hydrogen and water related diffusants could be captured a t SI dangling bonds. This gettering process was known to prevent the device characteristics degradations related to the H, $H_20$. The basic characteristics of Si rich oxide have been studied according to changing high/low frequency power and $SiH_4/N_2O$ gas flow ratio in PECVD. As increase in low frequency power, deposition rate decreased but K.I. and compressive stress increased. Decrease of the water peaks of FTIR spectra at the wave number range of 3300~3800$\textrm{cm}^{-1}$' also indicated that intensty the films were densified. As increase in SiH, gas flow rate, deposition rate, R.I. and etch rate increased while compressive stress decreased. F'TIK spectra showed that peak intensity corresponding to Si-0-Si stretching vibration decreased and shifted to the lower wave numbers. But AES showed that Si dangl~ng bonds were increased as a result of lower Si:O(l: 1.23) ratlo inthe Si rich oxide as compared to Si : O(1 : 1.98) ratio of usual oxide.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.669-673
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• 2002

Ni catalyst (Ni: 15 wt%) supported on precalcined SiO2 has been investigated in reforming reactions of methane to synthesis gas. The catalyst exhibited fairly good activity and stability in partial oxidation of methane (POM), whereas it deactivated in steam reforming of methane (SRM). Pulse reaction results of CH4, O2, and CH4/O2 revealed that Ni/SiO2 has high capability to dissociate methane. The results also revealed that both CH4 and O2 are activated on the surface of metallic Ni, and then surface carbon species react with adsorbed oxygen to produce CO and CO2 depending on the bond strength of the oxygen species on the catalyst surface.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.406-412
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• 2003

FT-IR and thermography were used to investigate the infrared radiation characteristic of SiO$_2$ film and SiO$_2$/Fe$_2$O$_3$film coated on aluminum. Through FT-TR spectrum, SiO$_2$film showed high infrared absorption in accordance with the stretching vibration of Si-O-Si, and as$ Fe_2$$O_3$was mixed additional absorption band appeared resulting from the stretching vibration of Fe-O at $590cm^{-1}$ and the bond of Si-O-Fe at $900 cm^{-1}$ The two kinds of film measured by the integration method and the reflective method coincided with each other in the wavelength area of infrared absorption and radiation, and corresponded well with Kirchhoff's law as the infrared emissivity is high in wavelength where infrared absorption rate is high. The emissivity of $SiO_2$ film was 0.65 and that of $SiO_2$/Fe$_2$$O_3$film was 0.77, so the addition of$ Fe_2$$O_3$ raised the infrared emissivity by approximately 13%.$ SiO_2$$Fe_2$$O_3$ film is efficient as an infrared radiator at below $100^{\circ}C$. The temperature of heat radiation after 7 minutes was 117$^{\circ}C$ in aluminum plate and $155^{\circ}C$ in $SiO_2$$Fe_2$$O_3$ film, $38^{\circ}C$ higher than the former.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.665-670
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• 2000

Linear annealing method was developed to increase the bond strength of Si wafer pair mated at room tem­perature instead of conventional furnace annealing method. It has been known that the interval of the two mating wafer surfaces decreases and the density of gaseous phases generated at the interface increases with increase in an-nealing temperature. The new annealing method consisting of one heat source and light reflecting mirror used these two phenomena and was applied to Si$\mid$$\mid$Si and Si$\mid$$\mid$$SiO_2/Si$ bonding. The bonding interface observed directly by using IR camera and HRTEM showed clear bonding interface without any unbonded areas except the area generated by the dusts inserted into the mating interface at the room temperature. Crack opening method and direct tensile test was ap­pplied to measure the bond strength. The two methods showed similar results. The bond strength increased continuous­tly with the increase of annealing temperature.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.

• Journal of the Korean Ceramic Society
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• v.30 no.4
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• pp.289-298
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• 1993

Properties in terms of the variation of the glass compositions, which were density (p), molar volume(Vm), atom/ion packing density (Dp), refractive index (nD), transformation temperature (Tg), dilatometric softening point (Td), thermal expansion coefficient (α), Young's modulus (E), and knoop hardness (KHN) were investigated in CaO-SiO2 glasses and CaO-P2O5-SiO2 glasses containing less than 10mole% of P2O5. Those properties were measured by density measurement kit, Abbe refractometer, dilatometer, ultrasonic pulse echo equipment, and micro hardness tester. When CaO content was increased in CaO-SiO2 glasses, p, Dp, nD, Tg, Td, α, E and KHN were increased, while Vm was decreased. When P2O5 was added to the CaO-SiO2 glasses with constant CaO/SiO2 ratio as 1.07, p, Dp, nD, Tg, Td, α, E and KHN were decreased, while Vm was increased. When the amount of P2O5 in glasses was kept constant, the changes of the properties with variation of CaO content in the CaO-P2O5-SiO2 glasses were very similar to those of CaO-SiO2 glasses. These phenomena could be explained by the structural role of P2O5 in the CaO-P2O5-SiO2 glasses, which was polymerization of siicate structures and resulted in [PO4] monomer structure in glasses. Due to this structural characteristics, the bond strength and packing density were changed with compositions. Proportional relationships between 1) np and Dp, 2) Tg, Td, α and CaO content, 3) E and Vm-1, and 4) KHN and P2O5 content were evaluated in this investigation.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.319-324
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• 2007

The structural properties of $SiO_2$ liquid at finite temperatures have been investigated by molecular dynamics (MD) simulations utilizing the Tersoff interatomic potential. During cooling process, the $SiO_2$ liquid structure quenched with a cooling rate of $1.0{\times}10^{11}K/sec$ shows the traditional properties observed in the experiments. The coordination defects of system decrease with decreasing temperature up to 17%. The $SiO_2$ glass quenched up to 1600 K contains defects consisting of the fivefold coordination of Si, and the threefold coordination of O atoms. The calculated diffusion coefficients which are calculated by monitoring. the mean-square displacement of atoms drop to almost zero below 3000 K ($<10^{-6}\;cm^2/sec$) but has a fluctuations at low temperature. The structure properties of $SiO_2$ liquid shows a significant dependence on the temperature during cooling process. Bond-angle distribution at around $120^{\circ}$ originate from the O and Si atoms consisting of the over-coordinated O atoms.