• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.132-133
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• 2007

2개의 주파수가 인가된 유도결합 플라즈마(ICP)를 이용하여 주파수 조합(13.56 or 27.12/2MHz)과 안테나의 캐패시턴스 변화에 따른 $SiO_2$ 와 poly-Si 의 식각특성을 연구하였다. 본 실험의 결과로, 27.12 MHz에서 plasma density가 높다는 것과 13.56 MHz에서 center high profile이 쉽게 형성됨을 알 수 있었다. $SiO_2$ 식각에서는 non-uniformity와 etch rate모두 27.12 MHz가 13.56 MHz보다 높다는 것을 알 수 있었고, poly-Si 식각에서는 non-uniformity와 etch rate모두 비슷한 경향을 나타낸다는 것을 알 수 있었다.

• Journal of the Korean Chemical Society
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• v.34 no.5
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• pp.413-417
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• 1990

The structural variation process of amorphous SiO$_2$ gel upon heat-treatment conditions of 80, 250, 450 and 1000$^{\circ}C$ has been studied by using the radial distribution functions (RDF$_{obs}$) estimated from the X-ray diffraction intensities. The expected gel structure was determined by comparing the RDF$_{obs}$ with those for the other six standard samples selected appropriately. The structure of specimens prepared by sol-gel method is well consistent with that of fused SiO$_2$ (${\beta}$-cristobalite with cubic symmetry) except a slight difference in O-O band distance.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.346-349
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• 1998

In order to reduce to the defect density in poly-Si/SiO$_2$ thin films, where poly-Si is either undoped or doped by BF$_2$ implantation, the poly-Si/SiO$_2$ samples have been hydrogenated by rf plasmas of low temperature. Before hydrogenation, both $P_b$ centers and E centers were observed in the poly-Si(undoped)/SiO$_2$ and in the poly-Si(doped)/SiO$_2$. After 30 min hydrogenation, the $P_b$ center was reduced by 80 % doped sample and by 76 % in the undoped sample and the E center was not observed. After 90min hydrogenation, however, increases of the $P_b$ centers and regenerations of the E center were observed in the undoped sample as well as in the doped one. Compared with the undoped sample, the increase of $P_b$ center in the doped one was more dominant.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.59-62
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• 2005

백색 LED 램프를 제조하는 공정에서 램프간의 전기적 개방상태의 절연상태를 유지하기 위해 사파이어 기판 위에 성장된 GaN 계 반도체 에피박막층을 제거하기 위해 유도 결합형 플라즈마 식각 공정을 이용하였다. 4 미크론의 두께를 갖는 GaN 층을 식각하는데 있어 식각 방지 마스킹 물질로 포토레지스트, $SiO_2,\;Si_{3}N_4$ 및 $Al_{2}O_3$를 시험하였다. 동일한 전력 및 가스유량상태에서 $Al_{2}O_3$만 에피층을 보호할 수 있음을 확인하였다.

• Resources Recycling
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• v.9 no.1
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• pp.63-69
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• 2000

Ferromanganese dust is an oxide substance of Mn. If imprities are removed and oxidation degree is controlled, the dust can be recycled for soft ferrite materials. The ferromanganese dust contained about 7 kinds of impurities, expecially about 9000 ppm of $SiO_2$ contents of the ferromanganese dust from 9000 ppm to under 500 ppm by fritting method. The $SiO_2$ in ferromanganese dust can be converted into water soluble compounds by alkali fritting and removed by water leaching. KOH and NaOH were used. The most effective conditions to get rid of $SiO_2$ from the dust are that the weight ratio of alkali to ferromanganese dust is 1.75 and fritting is run at $550^{\circ}C$ for 1 hour.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.159-163
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• 2001

The success of SDB (silicon wafer direct bonding) technology can be estabilished by bonding on the bonded interface with no defects and Preventing temperature dependent bubbles. In this research, we observed the behavior of the intrinsic bubbles by transmitting the infrared light and the increase of the bubble pressure was found. And, the $SiO_2$-$SiO_2$ bonded wafer was achieved, which generates no intrinsic bubbles in the annealing under the atmospheric pressure. The intrinsic bubbles in the $SiO_2$-$SiO_2$ bonded wafer were generated in the annealing in the ultra high vacuum. This experimental result shows the relation between the bubble growth and the pressure.

• Journal of the Microelectronics and Packaging Society
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• v.3 no.2
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• pp.39-50
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• 1996

본 연구에선 주어진 조성의 알루미나 green sheet에 대하여 텅스텐의 입경 및 산화 물의 조성을 변화시키므로써 수축률을 제어하여 camber를최소화하여 결합강도를 최대로 하 는 텅스텐 페스트조성을 찾아내는 것을 목적으로 하였다. 본 실험에서 사용한 텅스텐 분말 의 입경은 0.35$\mu$m, 0.6$\mu$m, 0.72$\mu$m, $1.5\mu$m, 1.9$\mu$m, 3.2$\mu$m이며 frit는 Al2O3, MgO, SiO2 와 Al2O3, CaO, SiO2를 사용하여 각각의 조성에 따라 함량을 변화시키며 실험하였다. 소성 은 154$0^{\circ}C$로 습윤 수소분위기에서 시행하였으며 사용된 알루미나 green sheet의 알루미나 중심 입경은 2.8$\mu$m이었다. 분석은 주사전자 현미경으로 미세구조를 관찰하였고 EPMA Line Profile로 원소 분석을 하였으며 잔류응력을 측정하기 위하여 XRD분석을 하였다. Frit 을 함유하지 않은 경우 텅스텐 분말의 입경이 1.9$\mu$mdlfEo 최대 접합 강도를 나타내었다. Frit을 함유한 경우 Mgo계 frit조성에서는 MgO/Al2O3/SiO3=1/1/1일 때 CaO계 frot 조성에 서는 CaO/Al2O3/SiO2=1/2/1일 때 최대 접합 강도를 나타내었다. Frit 함량을 변화시킨 경우 MgO계는 10wt%함유하였을 때 CaO 계는 5wt%함유하였을 때 최대 접합강도를 나타내었 다. Frit 함량을 변화시킨 경우 MgO계는 10wt%함유하였을 때, CaOr계는 5wt%함유하였을 때 최대 접합강도를 나타내었다.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.23 no.7 s.166
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• pp.1085-1093
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• 1999

Thickness effects of coupling agent on residual bending stress were investigated in $Polyimide/SiO_2$ joints during thermal cycling. Thickness and peel strength of $\gamma$-APS coupling agent were measured and correlated with solution concentration and residual bending stress. The variation of residual bending stress with temperature was also measured for various thicknesses of the coupling agent. Finite element results were compared with experimental data for residual bending stress in $Polyimide/SiO_2$ joints.

• Journal of the Korean Chemical Society
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• v.60 no.4
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• pp.239-244
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• 2016

We investigated the structures and electronic properties of Cu_mSiO_m+1 clusters with m = 0 - 7. For these clusters, we replaced a Cu atom in the copper oxide clusters with a Si atom. The B3LYP functional and LANL2DZ basis set were used for optimization of the molecular structures of all neutral and charged clusters. The bond distances, bond angles, and Mulliken charges were calculated to study the structural properties. In addition, in order to understand the electronic properties, we examined the ionization energies, electronic affinities, and second differences in energies.