• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
• /
• pp.196-196
• /
• 2001

• 한국세라믹학회지
• /
• 제44권6호
• /
• pp.338-342
• /
• 2007

Porous silicon nitride ceramics were prepared by SHS (Self-Propagating High Temperature Synthesis) from silicon powder, silicon nitride powder and pore-forming precursor. The microstructure, porosity and the flexural strength of the porous silicon nitride ceramics were varied according to the Si/Si3N4 ratio, size and amount of the pore-forming precursors. Some sample exhibited as high flexural strength as $162{\pm}24\;MPa$. The high strength is considered to result from the fine pore size and the strong bonding amoung the silicon nitride particles.

• 공업화학
• /
• 제9권2호
• /
• pp.159-164
• /
• 1998

Dichlorodimethylsilane의 탈염소중합반응에의해 polydimethylsilane(PDMS)을 합성한 후 가압 반응기내의 재배열 반응에 의해 탄화규소(SiC) 전구체인 polycarbosilane(PCS)를 합성하였다. 합성된 PCS는 n-hexane과 methanol의 혼합용매를 사용한 분별 침전법으로 분자량에 따라 세 분율로 분리한 다음 FT-IR, NMR, GPC, TGA/DSC와 XRD를 사용하여 분석한 뒤 상업용 고분자와 비교하였다. 또한 합성되 PCS의 분자량 분포는 반응 압력, 반응 온도 및 시간에 대한 의존성을 가지며 분자량에 따라 고분자의 열적성질과 세라믹 수율이 달라짐을 알 수 있었다. PDMS를 $420^{\circ}C$에서 10시간 동안 반응시킬 때 비교적 단분산 분자량 분포를 가지며, 저분자체와 비용해성 PCS가 최소로 생성되고 우수한 가공성을 가진 중간 분자량 분포($M_n=4,000$)PCS가 최대로 얻어졌다.

• 한국재료학회지
• /
• 제22권4호
• /
• pp.180-184
• /
• 2012

Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

• 한국진공학회지
• /
• 제19권5호
• /
• pp.391-396
• /
• 2010

실리콘 태양전지의 pn 접합 계면특성을 조사하기 위해서 p형 실리콘 기판 위에 전기로를 이용한 $POCl_3$ 공정을 통하여 n형의 불순물을 주입하여 pn 접합을 만들었다. n형 불순물의 확산되어 들어가는 공정시간이 길고 공정온도가 높을수록 면저항은 줄어들었다. n형 불순물의 주입이 많아질수록 pn 접합 계면에서의 전자친화도가 줄어들면서 면저항은 감소되었다. 면저항이 줄어든 이유는 pn 접합계면에서 전자홀쌍이 생성되면서 이동길이가 길어지고 재결합률이 감소하였기 때문이다. n형의 불순물 확산공정시간이 긴 태양전지 셀에서 F.F. 계수가 높게 나타났으며, 효율도 높게 나타났다.

• 한국재료학회지
• /
• 제18권6호
• /
• pp.302-306
• /
• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Bulletin of the Korean Chemical Society
• /
• 제35권11호
• /
• pp.3299-3302
• /
• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• 한국재료학회지
• /
• 제24권9호
• /
• pp.474-480
• /
• 2014

Process conditions for the impregnation of polycarbosilane preceramic polymer into SiC-based composites were investigated. Two kinds of preceramic polymer (PCP) was impregnated into SiC-fiber fabrics with different solvents of n-hexane and divinylbenzene (DVB). Both microstructural observations and mechanical tests were conducted to evaluate the impregnation. The matrix phases were particulated in the case of hexane solvents. Apparent relative density of the matrix was about 78.8%. The density of matrix was increased to about 96.1-98.8% when the DVB was used; however, brittle fracture was observed during a bending test. The modulus of toughness was less than $0.74J/m^3$. The fabric impregnated with a mixed PCP-dissolved solution showed intermediate characteristics with relative high density of filling (apparent density of ~96.1%) as well as proper bending behavior. The modulus of toughness was increased to about $5.31J/m^3$. The composites developed by changing the precursor and solvent suggested the possibility of fabricating SiCf/SiC composites without a fiber to matrix interphase coating.

• 한국세라믹학회지
• /
• 제20권1호
• /
• pp.3-12
• /
• 1983

In the present study an attempt was made to synthesize the $Al_2O_3$.$2SiO_2$ glass in which atomic ratio is Al:Si=1:1 by sol-gel process. And at such a low temperature as 55$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Al bonding was obtained. $Si(OC_2H_5)_4$ and $Al(NO_3)_3$.$9H_2O$ were used as the precursor and among the mutual solvents only n-butanol gave good results for the synthesis of the gel derived glass. Partial hydrolysis of TEOS with one-fold mol of $H_2O$ prior to the reaction with aluminum nitrate gave the better results., Total oxide content to the total reactants by weight was affective to the results.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
• /
• pp.139-145
• /
• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.