• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.5-10
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• 2010

The $Ca_2SiO_4$ phosphors doped by La with 0.1 wt%, 0.3 wt%, 0.5 wt%, and 1.0 wt% concentration were prepared by sintering at $1000^{\circ}C$ for 90 minutes in N2 atmosphere. The phosphors were ground in powdered form and were grouped in $100{\mu}m$ size, then the samples had been exposed to low energy X-ray and UV light. The TL glow curves were measured by heating the phosphors at $10^{\circ}C/s$ rate. There was no significantly meaningful correlation between the TL intensity and the doping level. The intensities of the TL peak measured from X-ray irradiated samples doped with 0.1 wt% were relatively strong. The activation energy and the frequency factor were 0.434 ~ 0.516 eV and 0.5 ~ 0.56, respectively. The intensities of the TL peak measured from UV irradiated samples doped with 0.3 wt% were relatively strong. The activation energy and frequency factor were 0.415 ~ 0.477 eV and 0.5 ~ 0.53, respectively. The TL process were found to be the 2nd order for both X-ray and UV irradiation. The TL intensity was increased linearly with the increase of the radiation dose. In summary, the $Ca_2SiO_4 phosphors developed in this study showed good TL characteristics at low energy X-ray and UV light. We believe they will be used as TLDs in near future for personal and environmental radiation detection dosimetry.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.471-477
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• 1991

Effects of ZnO, PbO and SiO2 on the grain growth and magnetic properties of Sr-ferrite were investigated. (1) Addition of ZnO to Sr-ferrite increased remanence, but decreased coercivity and maximum energy product. (2) Addition of PbO up to 0.5 wt% increased (B$.$H)max of Sr-ferrite, but addition more than 0.5 wt% decreased (B$.$H)mzx (3) SiO2 addition to the 0.5 wt% PbO doped Sr-ferrite decreased remanence and increased coercivity. The coercivity increase in due to the grain refinement effect of SiO2. But addition of SiO2 more than 0.5 wt% invoked a decrease of coercivity and (B$.$H)max of Sr-ferrite due to abnormal grain growth. Sr-ferrite magnet having maximum energy product of 3.7MGOe was fabricated by using the roasting product of Pyrrhotite.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.35-58
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• 2000

The demand for sub-micrometer or nanometer functional ceramic powders with a better suspension behavior in aqueous media in increasing. Redispersible barium titanate (BT) nanocrystals, green light emitting Mn2+ doped Zn$_2$SiO$_4$ and ZnS nanoparticle phosphors were synthesized by a hydrothermal method or chemical precipitation with surface modification. The nanoparticle redispersibility for BT was achieved by using a polymeric surfactant. X-ray diffraction(XRD) results indicated that the BT particles are of cubic phase with 80 nm in size. XRD results of zinc silicate phosphor indicate that seeds play an important role in enhancing the nucleation and crystallization of Zn$_2$SiO$_4$ crystals in a hydrothermal condition. This paper describes and discuss the methods of surface modification, and the resulting related properties for BT, zinc silicate and zinc sulfide.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.565-570
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• 2017

Tobacco smoke emitted during smoking is divided into a main-stream and side-stream smoke. Most of the tobacco smoke that spreads to a room while smoking is a side-stream one. The side-stream tobacco smoke is two to three times more harmful than that of the main-stream tobacco smoke. In this study, the removal efficiency of CO, $H_2S$, $NH_3$ and HCHO in a side-stream tobacco smoke using the doping component of $TiO_2$ photocatalysts was confirmed. As a result, CO was removed up to 78.37%, which indicated that the $TiO_2$ photocatalytic process is effective for CO removal. Also, the removal efficiencies of CO, $H_2S$ and HCHO were greatly affected by the amount of doped O and Si components of the $TiO_2$ photocatalyst. In conclusion, the more doped O and Si components had, the higher removal efficiencies of harmful substances were achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.159-166
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• 1999

The physical properties and microstructural changes with heat-treatment of opacified silica aerogels doped by TiO2 were investigated. Monolithic SiO2-TiO2 aerogels were prepared by supercritical drying (25$0^{\circ}C$, 1250 psig) of wet gel obtained by adding titanium isopropoxide to prehydrolyzed TEOS-isopropanol solutions. The density and the porosity of SiO2-10 mol% TiO2 aerogels were 0.23 g/㎤ and 90%, respectively. During supercritical drying, the linear shrinkage of aerogels increased with increase in the titanium content an TiO2 was transformed to the anatase phase as well as particls agglomerates led to TiO2 clusters of 100~800 nm dispersed homogeneoulsy in the silica matrix. The IR transmittance of opacified silica aerogels was very low in the region of wavelengths below 8 ${\mu}{\textrm}{m}$ compared with pure silica aerogels and SiO2-TiO2 aerogels showed the high thermal stability of microstructures up to $600^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• Journal of Magnetics
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• v.16 no.3
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• pp.216-219
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• 2011

Mn doped ZnO films were prepared on Si (100) substrates using sol-gel method. The prepared films were annealed at $550^{\circ}C$ for decomposition and oxidation of the precursors. XRD analysis revealed the presence of ZnMnO hexagonal wurtzite phase along with the presence of small quantity of $ZnMn_2O_3$ secondary phase and poor crystalline nature. The 2D, 3D views of magnetic domains and domain profiles were obtained using magnetic force microscopy at room temperature. Rectangular shaped domains with an average size of 4.16 nm were observed. Magnetic moment measurement as a function of magnetic field was measured using superconducting quantum interference device (SQUID) magnetometry at room temperature. The result showed the ferromagnetic hysteresis loop with a curie temperature higher than 300 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.216-216
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• 2012

The purpose of this work is to investigate a back surface field (BSF) on variety wafer resistivity for industrial crystalline silicon solar cells. As pointed out in this manuscript, doping a crucible grown Cz Si ingot with Ga offers a sure way of eliminating the light induced degradation (LID) because the LID defect is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation along the Ga doped Cz Si ingot. Because of the resistivity variation the Cz Si wafer from different locations has different performance as know. In the light of B doped wafer, we made wider resistivity in Si ingot; we investigated the how resistivities work on the solar cells performance as a BSF quality.