• Journal of Powder Materials
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• v.27 no.4
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• pp.300-304
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• 2020

In this paper, a durability study is presented to enhance the mechanical properties of an Fe-Si-Al powder-based magnetic core, through the addition of graphite. The compressive properties of Fe-Si-Al-graphite powder mixtures are explored using discrete element method (DEM), and a powder compaction experiment is performed under identical conditions to verify the reliability of the DEM analysis. Important parameters for powder compaction of Fe-Si-Al-graphite powder mixtures are identified. The compressibility of the powders is observed to increase as the amount of graphite mixture increases and as the size of the graphite powders decreases. In addition, the compaction properties of the Fe-Si-Al-graphite powder mixtures are further explored by analyzing the transmissibility of stress between the top and bottom punches as well as the distribution of the compressive force. The application of graphite powders is confirmed to result in improved stress transmission and compressive force distribution, by 24% and 51%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.19-24
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• 1996

The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.365-371
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• 2019

In this study, the flame temperature distribution of the diffusion flame burner for SiO₂ deposition was analyzed by the computational fluid analysis. This corresponds to the previous step for simulating the SiO₂ preform deposition process for manufacturing optical fibers using environmentally friendly raw materials. In order to model premixed combustion, heat flow, convection, and chemical reactions were considered, and Reynolds-averaged Navier-Stokes equations and k-ω models were used. As a result, the temperature distribution of the flame showed a tendency to increase the distance from the nozzle surface to the maximum temperature when the flow rate of the auxiliary oxygen increased. In addition, it was confirmed that the temperature distribution due to incomplete combustion was large in the combustion reaction with a large equivalence ratio of the mixed gas.

• Proceedings of the Korean DIstribution Association Conference
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• 2005.11a
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• pp.297-310
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• 2005

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.12 no.1
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• pp.1-8
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• 2007

Environment factors related to the distribution of organic matter in surface seawater and sediments were investigated to estimate main pollution sources and range of their influence in Gwangyang Bay. The main pollution sources for the factors that affect organic matter distribution could be divided into three main sources: fresh water runoffs from Seomjin and Dong River, Gwangyang-si domestic sewage, and Yosu Industrial Complex. Considering the characteristics in horizontal distributions of the environmental factors in water column, sediment, and water current regime, the influencing range of these main sources was likely to be divided into three areas within the bay as follows: Area I receiving lots of fresh water from Seomjin River, Area II receiving lots of domestic sewage from Gwangyang-si and fresh water of Dong River, Area III receiving lots of materials from Yosu Industrial Complex. Area I seems to be characterized as low salinity, high concentration of $NO_3-N,\;and\;SiO_2-Si$, Area II as low salinity, high concentration of $NO_3-N,\;NH_4-N,\;and\;SiO_2-Si$, and Area III as high water temperature, high concentration of $NH_4-N,\;and\;PO_4-P$ in water column, high concentration of $NH_4-N,\;PO_4-P,\;and\;SiO_2-Si$ in surface sediments.

• Proceedings of the Korean Nuclear Society Conference
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• 2003.05a
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• pp.244-244
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• 2003

• Nuclear Engineering and Technology
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• v.54 no.7
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• pp.2564-2571
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• 2022

SiPMs are generally coupled into whole columns in gamma energy spectrum measurement, but the relationship between the distribution of whole SiPM columns and the energy resolution of the measured energy spectra is rarely reported. In this work, ∅ 3 × 3 inch NaI scintillator is placed on an 8 × 8 SiPM array, and the energy resolution of the ¹³⁷Cs peak at 662 keV corresponding to the γ-ray is selected as a reference. Each SiPM is switched to explore the influence of the number of SiPM arrays, distribution position, and reflective layer on the energy resolution of SiPMs. Results show that without coupling, the energy resolution is greatly improved when the number of SiPMs ranges from 4 to 32. However, after 32 slices (the area covered by SiPMs relative to the scintillator reaches 25.9%), the improvement in energy resolution and total pulse count is not obvious. In addition, the position of SiPMs relative to the scintillator does not exert much impact on the energy resolution. Results also indicate that by adding a reflective film (ESR), the energy resolution of the tested group increases by 10.38% on average. This work can provide a reference for the design and application of miniaturized SiPM gamma spectrometers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.