• 한국분말재료학회지
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• 제27권4호
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• pp.300-304
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• 2020

In this paper, a durability study is presented to enhance the mechanical properties of an Fe-Si-Al powder-based magnetic core, through the addition of graphite. The compressive properties of Fe-Si-Al-graphite powder mixtures are explored using discrete element method (DEM), and a powder compaction experiment is performed under identical conditions to verify the reliability of the DEM analysis. Important parameters for powder compaction of Fe-Si-Al-graphite powder mixtures are identified. The compressibility of the powders is observed to increase as the amount of graphite mixture increases and as the size of the graphite powders decreases. In addition, the compaction properties of the Fe-Si-Al-graphite powder mixtures are further explored by analyzing the transmissibility of stress between the top and bottom punches as well as the distribution of the compressive force. The application of graphite powders is confirmed to result in improved stress transmission and compressive force distribution, by 24% and 51%, respectively.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.19-24
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• 1996

The phase distribution and interface chemistry by the solid-state reaction between SiC and nickel were studied at temperatures between $550 \;and\; 1250^{\circ}C$ for 0.5-100 h. The reaction with the formation of silicides and carbon was first observed above $650^{\circ}C$. At $750^{\circ}C$, as the reaction proceeded, the initially, formed $Ni_3Si_2$ layer was converted to $Ni_2$Si. The thin nickel film reacted completely with SiC after annealing at $950^{\circ}C$ for 2 h. The thermodynamically stable $Ni_2$Si is the only obsrved silicide in the reaction zone up to $1050^{\circ}C$. The formation of $Ni_2$Si layers with carbon precipitates alternated periodically with the carbon free layers. At temperatures between $950^{\circ}C$ and $1050^{\circ}C$, the typical layer sequences in the reaction zone is determined by quantitative microanalysis to be $SiC/Ni_2$$Si+C/Ni_2$$Si/Ni_2$$Si+C/…Ni_2$Si/Ni(Si)/Ni. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was discussed in terms of reaction kinetics and thermodynamic considerations. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic growth of the reaction zone.

• 한국표면공학회지
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• 제36권2호
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• 한국결정성장학회지
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• 제29권6호
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• pp.365-371
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• 2019

본 연구에서 SiO₂ 증착용 확산 화염 버너의 연료와 산소의 비율 변화에 따른 화염의 온도 분포를 전산 유체 해석을 수행하였다. 이는 친환경 원료물질을 이용한 광섬유 제조용 SiO₂ 프리폼 증착 공정을 시뮬레이션하기 위한 전단계에 해당한다. 예혼합 연소를 모델링하기 위해서 열 유동, 대류 및 화학 반응을 고려하였고 Reynolds-averaged Navier-Stokes 방정식과 k-ω 모델을 사용하였으며, 실제 화염의 온도 분포와 형상을 비교하여 연소 모델링의 적절성을 확인하였다. 결과적으로 화염의 온도 분포는 보조 산소의 유량이 증가하면 노즐 표면으로부터 최고 온도까지의 거리가 증가하는 경향성을 보였다. 또한 혼합 가스의 당량비가 큰 연소 반응에서 불완전 연소로 인한 온도 분포의 폭이 크게 나타나는 것을 확인하였다.

• 한국유통학회:학술대회논문집
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• 한국유통학회 2005년도 추계학술대회 발표논문집
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• pp.297-310
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• 2005

• 한국해양학회지:바다
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• 제12권1호
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• pp.1-8
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• 2007

유기물 증가에 미치는 환경인자를 중심으로 그 수평분포 특성, 원인, 주요오염원의 영향권에 대하여 검토하기 위해 표층 해수와 표층 퇴적물을 조사하였으며, 그 결과를 요약하면 다음과 같다. 유기물변동에 영향을 미치는 환경인자에 대한 주요 오염원은 크게 섬진강과 동천 등의 담수, 광양시 생활하수, 여수산업단지로 크게 나누어볼 수 있었다. 해수와 퇴적물의 환경인자에 대한 수평분포 특성과 해수의 흐름 등을 고려하여 이들 주요 오염원의 영향권을 구분한 결과, (I) 섬진강 담수의 영향을 많이 받는 해역, (II) 광양시와 동천의 영향이 큰 해역, (III) 여수 산업단지의 영향을 많이 받는 해역으로 나누어졌다. 그리고, 오염원의 영향권 별 수질환경인자의 특성으로는 섬진강 담수의 영향을 많이 받는 해역은 낮은 염분, 높은 농도의 $NO_3-N$과 $SiO_2-Si$, 담수와 생환하수의 영향이 큰 해역은 낮은 염분, 높은 농도의 $NO_3-N,\;NH_4-N,\;SiO_2-Si$, 여수 산업단지의 영향을 많이 받는 해역은 표층해수의 경우 높은 수온, 높은 농도의 $NH_4-N$과 $PO_4-P$, 퇴적물의 경우 높은 농도의 $NH_4-N,\;PO_4-P,\;SiO_2-Si$로 특징 지울 수 있을 것으로 보인다.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2003년도 춘계학술발표대회 요약집
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• pp.244-244
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• 2003

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2564-2571
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• 2022

SiPMs are generally coupled into whole columns in gamma energy spectrum measurement, but the relationship between the distribution of whole SiPM columns and the energy resolution of the measured energy spectra is rarely reported. In this work, ∅ 3 × 3 inch NaI scintillator is placed on an 8 × 8 SiPM array, and the energy resolution of the ¹³⁷Cs peak at 662 keV corresponding to the γ-ray is selected as a reference. Each SiPM is switched to explore the influence of the number of SiPM arrays, distribution position, and reflective layer on the energy resolution of SiPMs. Results show that without coupling, the energy resolution is greatly improved when the number of SiPMs ranges from 4 to 32. However, after 32 slices (the area covered by SiPMs relative to the scintillator reaches 25.9%), the improvement in energy resolution and total pulse count is not obvious. In addition, the position of SiPMs relative to the scintillator does not exert much impact on the energy resolution. Results also indicate that by adding a reflective film (ESR), the energy resolution of the tested group increases by 10.38% on average. This work can provide a reference for the design and application of miniaturized SiPM gamma spectrometers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.