• Toxicological Research
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• v.29 no.4
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• pp.257-261
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• 2013

${\alpha}$-Curcumene is one of the physiologically active components of Curcuma zedoaria, which is believed to perform anti-tumor activities, the mechanisms of which are poorly understood. In the present study, we investigated the mechanism of the apoptotic effect of ${\alpha}$-curcumene on the growth of human overian cancer, SiHa cells. Upon treatment with ${\alpha}$-curcumene, cell viability of SiHa cells was inhibited > 73% for 48 h incubation. ${\alpha}$-Curcumene treatment showed a characteristic nucleosomal DNA fragmentation pattern and the percentage of sub-diploid cells was increased in a concentration-dependent manner, hallmark features of apoptosis. Mitochondrial cytochrome c activation and an in vitro caspase-3 activity assay demonstrated that the activation of caspases accompanies the apoptotic effect of ${\alpha}$-curcumene, which mediates cell death. These results suggest that the apoptotic effect of ${\alpha}$-curcumene on SiHa cells may converge caspase-3 activation through the release of mitochondrial cytochrome c.

• The Korean Journal of Physiology
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• v.18 no.1
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• pp.9-17
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• 1984

The second inward current $(i_{si})$ was studied by the two microelectrode voltage clamp technique in the sino-atrial node of the rabbit. The slow component $(i_{si,2})$ of the second inward current was sometimes identified and $i_{si}$ behaved as if it were a mixture of two currents. We analysed the $(i_{si,2})$ in relation to membrane potential and frequency of voltage clamp pulses. 1) Membrane was held at -40mV which was usually found to be zero current level. When depolarizing pulses were applied, the slow inward current $(i_{si})$ was activated. 2) It was shown that there are three categories of the $i_{si}$ activation by the low level of depolarizing clamp pulses. Moderately fast inward current with single component was developed in most cases in the presence of tetrodotoxin(TTX). But sometimes there was two separate components of $i_{si}$ activation in the peak level and the time course. Thirdly the only slow component of $i_{si}$ was found in rare cases. 3) The activation of $(i_{si,2})$ was dependent upon membrane potential. The $i_{si}$ shows two separate peaks during clamp depolarizations and higher clamp pulses lead to fusion of the peaks. 4) The $i_{si,2}$ activation showed that it decreased with repetitive clamp pulses and it was more evident in higher frequencies(2Hz)(negative staircase).

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.47-52
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• 1997

Metastable pseudomorphic GeSi layers grown by vapor phase epitaxy on Si(100) substrates were implanted at room temperature. The implantations were performed with 90 KeV As ions to a dose of $1\times 10^{13}\;\textrm{cm}^2$ for $Ge_{0.08}Si_{0.92}$ layers and 709 keV $BF_2^+$ ions to a dose of $3\times 10^{13}\;\textrm{cm}^2$ for $Ge_{0.06}Si_{0.94}$layers. The samples were subsequently annealed for short 10-40 s durations in a lamp furnace with a nitrogen ambient or for a long 30 min period in a vacuum tube furnace. For $Ge_{0.08}Si_{0.92}$samples annealed for a 30 min-longt duration at $700^{\circ}C$ the dopant activation can only reach 50% without introducing significant strain relaxaion whereas samples annealed for short 40s periods (at $850^{\circ}C$) can achieve more than 90% activation without a loss of strain, For $Ge_{0.06}Si_{0.94}$samples annealed for either 40s or 30min at $800^{\circ}C$ full electrical activation of the boron is exhibited in the GeSi epilayer without losing their strain. However when annealed at $900^{\circ}C$ the strain in both implanted and unimplanted layers is partly relaxed after 30min whereas it is not visibly relaxed after 40s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.539-542
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• 2001

In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.04a
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• pp.183-186
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• 2000

The high temperature deformation behavior of spray-formed Al-19wt%Si-1.87wt%Mg-0.085wt.%Fe alloy was studied by torsion testing in the strain rate range of 0.001-1 sec-1 and in the temperature range of 300-500 $^{\circ}C$. The relationship between stress temperature and strain rate is expressed using the Power law. the behavior of dynamic recrystallization is showed in 300-35$0^{\circ}C$, 1-0.1sec-1 and the behavior of dynamic recovery is showed in 450-50$0^{\circ}C$, 0.01-0.001sec-1 The size of Si particles is mall when the temperature is low and the strain rate is high. The strain rate sensitivity(m) and the apparent activation energy(Q) indicate the dependence on strain rate and temperature for flow stress respectively. The hot ductility is high when m is high and Q is low. The maps of strain rate sensitivity and apparent activation energy suggest the optimum processing conditions.

• Korean Journal of Materials Research
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• v.24 no.11
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• pp.573-577
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• 2014

The existing metal getters are invariably covered with thin oxide layers in air and the native oxide layer must be dissolved into the getter materials for activation. However, high temperature is needed for the activation, which leads to unavoidable deleterious effects on the devices. Therefore, to improve the device efficiency and gas-adsorption properties of the device, it is essential to synthesize the getter with a method that does not require a thermal activation temperature. In this study, getter material was synthesized using palladium oxide (PdOx) which can adsorb $H_2$ gas. To enhance the efficiency of the hydrogen and moisture absorption, a porous layer with a large specific area was fabricated by an etching process and used as supporting substrates. It was confirmed that the moisture-absorption performance of the $SiO_2/Si$ was characterized by water vapor volume with relative humidity. The gas-adsorption properties occurred in the absence of the activation process.

• Nuclear Engineering and Technology
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• v.48 no.2
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• pp.299-303
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• 2016

Prompt gamma activation analysis using a thermal neutron-guided beam at Japan Atomic Energy Agency JRR-3M was applied for the precise determination of Si in silicon nitride ceramic reference materials [Japan Ceramic Reference Material (JCRM) R 003]. In this study, the standard addition method coupled with internal standard was used for the nondestructive determination of Si in the sample. Cadmium was used as internal standard to obtain the linear calibration curves and to compensate for the neutron beam variability. The analytical result of determining Si in JCRM R 003 silicon nitride fine powder ceramic reference materials using prompt gamma activation analysis was in good agreement with that obtained by classical gravimetric analysis. The relative expanded measurement uncertainty (k = 2) associated with the determined value was 2.4%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.64.2-64.2
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• 2011

a-Si 박막 태양전지는 a-Si:H을 유리 기판 사이에 주입해 만드는 태양전지로, 뛰어난 적용성과 경제성을 지녔으나 c-Si 태양전지에 비해 낮은 변환 효율을 보이는 단점이 있다. 변환 효율을 높이기 위한 연구 방법으로는 a-Si 박막 태양전지 단일cell 제작 시 high Bandgap을 가지는 p-layer를 사용함으로 높은 Voc와 Jsc의 향상에 기여할 수 있는데, 이 때 p-layer의 defect 증가와 activation energy 증가도 동시에 일어나 변환 효율의 증가폭을 감소시킨다. 이를 보완하기 위해 본 실험에서는 p-layer에 기존의 p-a-Si:H를 사용함과 동시에 high Bandgap의 buffer layer를 p-layer와 i-layer 사이에 삽입함으로써 그 장점을 유지하고 높은 defect과 낮은 activation energy의 영향을 최소화하였다. ASA 시뮬레이션을 통해 a-Si:H보다 high Bandgap을 가지는 a-SiOx 박막을 사용하여 p-type buffer layer의 두께를 2nm, Bandgap 2.0eV, activation energy를 0.55eV로 설정하고, i-type buffer layer의 두께를 2nm, Bandgap 1.8eV로 설정하여 삽입하였을 때 박막 태양전지의 변환 효율 10.74%를 달성할 수 있었다. (Voc=904mV, Jsc=$17.48mA/cm^2$, FF=67.97).

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1630-1632
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• 1997

We have investigated activation phenomena of implanted ions on silicon wafers using microwave(2.45GHz). It is found that the higher concentration of impurities makes the better activation effects by microwave annealing. We have exposed poly-Si TFTs by microwave in order to anneal and improved the device performance. Microwave activates source/drain ions and lowers the contact resistance so that the current of the poly-Si TFTs increases. In addition, the leakage current of hydrogen passivated poly-Si TFTs is decreased after microwave annealing, due to the diffusion of hydrogen ions and curing the defects in the poly-Si active channel.