• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.195-199
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• 2008

Composites of $Fe_{93.5}Si_{6.5}$ powder and epoxy were prepared using a thermal curing process. Scanning electron microscope (SEM), vibrating sample magnetometer (VSM) and network analyzer were used to analyze the structure, electromagnetic properties and microwave absorption of the composites. Results show that the saturation magnetization depends on the fraction of the $Fe_{93.5}Si_{6.5}$ powder in the composite, which affects initial permeability. It is believed that the eddy current loss is a dominant factor over 1 GHz and that the resonance frequency of the composite decreases with increasing fractions of $Fe_{93.5}Si_{6.5}$ powder. Finally, reflection loss was calculated from the permeability and permittivity of these composites. Composite with 50 wt.% $Fe_{93.5}Si_{6.5}$ powder fractions and 5 mm thickness showed reflection loss below -20 dB from 3.66 GHz to 4.16 GHz. Therefore, it is believed that thin Fe-Si/epoxy composites may be a good candidate for microwave absorption application.

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.969-973
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• 1997

저유전율 층간절연물질인 불소첨가 SiO$_{2}$박막을 ECR(electron cyclotron resonance) Plasma chemical vapor deposition 법으로 성막하였다. SiOF박막의 증착은 SiF$_{4}$/O$_{2}$의 가스유량비를 변수로하여 0.2에서 1.6까지 변화시켜 증착하였고, 이때 마이크로파 전력은 700W, 기판온도는 30$0^{\circ}C$에서 행하였다. 증착된 SiOF박막의 흡습특성을 알아보기 위하여 Fourier transformed infrared spectroscopy(FTIR)을 이용하여 분석한 결과, 가스유량비 (SiF$_{4}$O$_{2}$)가 0.2 에서 1.6으로 증가하였을 때 Si-Ostretching피크의 위치는 1072$cm^{-1}$ /에서 1088$cm^{-1}$ /로 증가하였으며, Si-F$_{2}$피크는 가스유량비가 1.0이상에서 나타나기 시작하였다. 또한 가스유량비가 0.2에서 0.8까지 변화하여 증착한 시편은 Si-OH 피크가 관찰되지 않았지만 가스유량비가 1.0이상(11.8at.% F함유)의 시편의 경우 Si-OH 피크가 관찰되어 내흡습성이 저하되고 있음을 확인할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1190-1196
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• 1998

Ultrafine ${\beta}$-SiC powders were synthesized by the vapor phase reaction of TMS[Si(CH3)4] in hydrogen The reaction temperature and TMS concentration were varied from 1000 to 1400$^{\circ}C$ and from 1 to 10% respectively. The average particle size and phase of the powders were analyzed by TEM and XRD. Ultrafine ${\beta}$-SiC powders were synthesized above 1000$^{\circ}C$ and the crystallinity of the powders increased with increasing reaction temperature. Shape of the particles were spherical and had average size of about 20 nm which showed no difference as the reaction temperature and TMS concentration increased. From the FT-IR analysis the absorption bands of Si-C of the powders shifted to higher wavenumber as the reaction temperature increased,. Under the condition of total gas flow above 1500cc/min ${\beta}$-SiC and poly-Si powders were obtained simultaneously. The Si-O bond intensity was increased under the condition of total gas flow rate above 1000cc/min which might be due to oxidation formed on poly-Si.

• Journal of the Korean Chemical Society
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• v.29 no.2
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• pp.129-136
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• 1985

In the atomic absorption spectrometry using an air-acetylene flame, the interferences of Zr, Sn, Al, Sb, $SO_4^{2-},\;VO_3^-,\;and\;SiO_3^{2-}$, on the calcium absorption and the repression of this interference by the addition of cerium have been studied. The interference by Zr, Sn, Al, Sb, $SO_4^{2-},\;VO_3^-,\;and\;SiO_3^{2-}$ existed as the same concentration as calciurn ($3.0 {\times} 10^{-4}$M) in the sample solution are completely released by the addition of cerium twice as much as interfering cation. The interferences by the mixed interfering cations (Zr, Sn, Al and Sb) and by the mixed interfering anions ($SO_4^{2-},\;VO_3^-,\;and\;SiO_3^{2-}$) are larger than by each interfering cation and anion, and the releasing effect by cerium ($1.5 {\times} 10^{-2}$M) is effective up to some degree of the concentration of mixed interfering cations and of mixed interfering anions. The releasing effect by cerium to the mixed solution of interfering cations and anions is applicable to quite wide range of concentration.

• Journal of the Korean Geographical Society
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• v.50 no.5
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• pp.505-514
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• 2015

This study analyzes a correlation between water content values and chemical index of alteration (CIA) for coarse sedimentary rocks of Mt. Cheonsaeng in Gumi-si, Kyeongsangbuk-do. Through measurement of various water values of 20 samples including water content rate, water absorption rate and equipment measuring we comparatively analyzed the values with CIA of the samples obtained by X-ray fluorescence. As a result of analysis water content rate and water absorption rate in a sedimentary rock are likely to be higher when matrix is psephitic and less compact. Furthermore the higher water content rate is, the higher CIA is due to increase of $SiO_2$ and $Al_2O_3$ and decrease of CaO and $Na_2O$ derived by chemical weathering of felspar. This correlation between water content rate and CIA represents a similar result with previous studies targeting granite.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.65-73
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• 1994

Effects of deposition parameter on the ionic conductivity and structural change of the Lithium borosili-cate solid electrolyte films, prepared by rf sputtering using 7$LI_2O-3B_2O_3-1SiO_2$ single phase target and also a mosaic target enriched with $LI_2O$, were analyzed by measuring AC impedance and IR absorption spectra for the films. Thed solid electrolyte film deposited from the single phase target exhibited very low ionic conductivi-ty of $10^{-10}{\Omega}^{-1}cm{-1}$ at room temperature, a result of low $Li^+$ ion content(7.52 at%) in the film. The $Li^+$ con-ductivity for the films deposited from the mosaic target, however, significantly increased to $10^{-7}{\Omega}^{-1}cm{-1}$ due to both an increased $Li^+$content (14.75 at %) and a structural change of the films. The increased ionic conduc-tivity of the film appears to be associated with an easiness of ionic mobility by structural change of glassy film from a some close packed network structure to a open one. These structural changes of film were found to be closely related to the increase in the peak intensity at~$960cm^{-1}$ of IR absorption spectra for the glassy films. With increasing either argon pressure from 3 to 21 mtorr or rf power from 2 to 3 W/$cm^2$, the $Li^+$ conduc-tivity for the films significantly increased to an order of $10^{-6}{\Omega}^{-1}cm{-1}$ due to an increase in openness of film structure, as confirmed by both an increase in the IR absorption peak intensity at ~$960cm^{-1}$ and a resultant reduction of activation energy for mobility of $Li^+$ ion.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.198-204
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• 2007

The effects of annealing temperature on electromagnetic wave absorption characteristics in $Fe_{73.5}Cu_1Nb_3Si_{15.5}B_7$ (at%) alloy flakes/polymer composite sheets available for quasi-microwave band have been investigated. The composite sheet including the magnetic flakes annealed at $425{\sim}475^{\circ}C$ for 1 h exhibited highest power loss in the GHz frequency range as compared with the sheets composed of the alloy flakes annealed at higher temperature than $475^{\circ}C$ or in as-milled state. Moreover the imaginary part of complex permeability had largest value in the GHz frequency range for the sheets including the flakes annealed at $425{\sim}475^{\circ}C$. The large value of power loss of the sheets including the magnetic flakes annealed at $425{\sim}475^{\circ}C$ was attributed to the high imaginary part of the complex permeability. However, because of its large transmission parameter $S_{21}$, the composite sheet having the magnetic flakes annealed at $525^{\circ}C$ showed low power loss.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.1
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• pp.57-61
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• 2002

Ternary $SrO-B_2O_3-SiO_2$ glasses were fabricated as a function of R(${\equiv}SrO\;mole%/B_2O_3\;mole%$) and K(${\equiv}SiO_2\;mole%/B_2O_3\;mole%$). The structures of these glasses were investigated through Infrared transmittance, vicker's hardness, and refractive index. The results indicated : First, in the infrared transmittance spectra, when R increased, the intensities of the absorption bands around $1200{\sim}1600cm^{-1}$ resulting from the B-O stretching vibration bond in the symmetrical trigonal $BO_3$ units decreased, and these of the absorption bands around $800{\sim}1200cm^{-1}$ caused by the B-O stretching vibration bond of the tetrahedral $BO_4$ units varied. Also, the intensities of the absorption bands for the B-O stretching vibration bond in trigonal $BO_3$ units increased and these of the bands for B-O stretching vibration bond in tetrahedral $BO_4$ units decreased as K increased. Second, the increase and the decrease of vicker's hardness values for these glasses depended on the fraction of $BO_4$ units and it of $BO_3$ units, respectively. The refractive index of these glasses mostly depended on the SrO contents and only slightly depended on the fraction of $BO_4$ and $BO_3{^-}$ units.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.655-658
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• 1989

The characteristics of proton-diffused $LiNbO_3$ optical waveguides with self-aligned $SiO_2$-cladding are reported. When the proton diffusion occurs, the $SiO_2$-cladding limits the lateral diffusion of protons by out-diffusion of protons in unclad region. Proton indiffusion in depth direction is promoted by inhibition of out-diffusion in clad region. Consequently, the mode profile in depth direction can be nealy symmetric. The extent of the proton exchange was observed by measuring the infrared absorption peak at about $3500cm^{-1}$. It is confirmed that proton diffusion with $SiO_2$-cladding has structural excellency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.255-262
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• 2020

Grain boundaries play a major role in determining device performance, particularly of polysilicon-based photodetectors. Through the post-annealing of as-deposited polysilicon and then, the analysis of electric behavior for a metal-polysilicon-metal (MSM) photodetector, we were able to identify the influence of grain boundaries. A modified model of polysilicon grain boundaries in the MSM structure is presented, which uses a crystalline-interfacial layer-SiO_x layer- interfacial layer-crystalline system that is similar to the Si-SiO₂ system in MOS device. Hydrogen passivation was achieved through a hydrogen ion implantation process and was used to passivate the defects at both interfacial layers. The thin SiO_x layer at the grain boundary can enhance the photosensitivity of an MSM photodetector by decreasing the dark current and increasing the light absorption.