• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.1
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• pp.109-114
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• 2024

The bio-sensing properties of TE and TM guided modes in the coupled plasmon-waveguide resonance (PWR) configuration are investigated. The modal transmission-line theory (MTLT) is used for numerical analysis. The proposed PWR bio-sensor is composed of multi-layered configuration with N pairs of MgF2-Si3N4 layers to enhance the sensitivity of a conventional Ag-based surface plasmon resonance bio-sensor. The angular sensitivity of bio-sensor is numerically analyzed for a wide range of biological solutions (refractive index 1.33~1.37). Furthermore, the availability of sensor to detect cancer cells and blood plasma concentration is evaluated. Finally, the results indicate that the proposed bio-sensor is capable efficiently to detect various kinds of cancer cells and different glucose concentrations in urine.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.356-363
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• 1998

Using the results analyzed by FEM(Finite Element Method). the microheaters with the stress-balanced $Si_3N_4$(150 nm)/$SiO_2$(300 nm)/$Si_3N_4$(150 nm) diaphragms were fabricated by silicon micromachining techniques. Pt was used as microheater materials. Pt temperature sensor was fabricated to measure the temperature of microheaters. Resistance of temperature sensor and power dissipation of microheater were measured and calculated at the various temperatures. The thermal distribution of heater was examined by a IR thermoviewer. Measured and simulated results are compared and analyzed. The temperature coefficient of resistance of heater was about $0.00379/^{\circ}C$. Pt heater showed the power dissipation of about 51 mW at $300^{\circ}C$ and a uniform thermal distribution on the surface.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.2
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• pp.142-152
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• 1992

This paper presentes a new method to measure high electric field (or high voltage) by using crystalline SiO2 which has very high half wave voltage. There are many difficulties in measuring high electric field using other crystals which have generally low half wave voltage.By applying Stokes parameter and Mueller matrix. We derive optical modulation equation in the sensor which is composed of a polarizer, and Mueller matrix, we derive optical modulation equation in the sensor which is composed of a polarizer, a Pokels material, and an analyzer, We theoretically analyzed electro-optic effect, and calculated the phase retardation and half wave volt age of the birefringent material. The designed optical valtage sensor has very excellent linearity up to 20KV without divided volt-age. The maximum error was measured within 3%. Before annealing of Sio2 crystal, the maximum variation of the output voltage is 7.5% with varying temperature from \ulcorner20˚c to 60˚c. But, after annealing of SiO2 crystal, the output voltage variation is improved within 1%error.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.19-22
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• 2003

In this paper, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ammonium persulfate (AP) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-uniformity exists on the etched surface because of formation of hillocks on the <100> surface. With the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square diaphragms of 20$\mu\textrm{m}$ thickness and 100-400 $\mu\textrm{m}$ one-side length were fabricated successfully by adding AP of (5/6)g to 800 ml TMAH solution every 10 minutes.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• Journal of the Korean Magnetics Society
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• v.6 no.1
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• pp.36-39
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• 1996

We have constructed a disp1acerrent sensor for measuring dynamic magnetostriction of an arrvrphous ribbon under alternating magnetic field using fiber optic Fabry-Perot interferorreter. The signal of the sensor was depen¬dent on the index matching oil and the optical isolator. The resolution of the sensor was $30{\AA}$ and the measured peak to peak magnetostriction of the amorphous ribbon $Fe_{81}B_{13.5}Si_{3.5}C_{2}$ was $28{\times}10^{-6}$.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.846-849
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• 1991

This paper reports the principle, system confiquration, test results of optical voltage sensor using quartz pockels cell. The Pockels effect of quartz material is used for designing optical voltage sensor. The quarts material has very high half-wave voltage, so, it can be applied to measure high voltage level. Experimental results show that the optical voltage sensor has excellent linear characteristics within the applied AC voltage of 1200V.

• Journal of Sensor Science and Technology
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• v.19 no.2
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• pp.130-136
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• 2010

The microbolometer array sensor with fine pitch pixel array has been implemented to the released amorphous silicon layer supported by two contact pads. For the design of focal plane mirror with geometrical flatness, the simple beam test structures were fabricated and characterized. As the beam length decreased, the effect of beam width on the bending was minimized, Mirror deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The mirror tilting was caused by the mis-align effect of contact pad and confirmed by FEA simulation results. The properties of bolometer have been measured as such that the NETD 145 mK, the TCR -2 %/K, and thermal time constant 1.99 ms.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.87-90
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• 2005

$SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.