• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1101-1106
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• 1998

Various $Zn_{2-x}SiO_4$:xMn based green phosphors were investigated in association with a co-dopant. The co-dopant incorporated into the phosphors are believed to alter the internal energy state of $Zn_{2-x}SiO_4$ : xMn So that the improvement in their intensity could be expected. Phosphor samples were prepared using the solid state reaction therein raw powders are mixed in the acetone and successively fired at $1300^{\circ}C$ for 4 hour. The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmoshpere and thereby giving The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmosphere and thereby giving rise to conspicuous enhancement of radiative efficiency. Basically the 0.08 mole ratio of the Mn con-centrations has the maximum value of the intensity so that a co-dopant are added to this Mn con-centration. When the Mg is co-doped with Mn luminescent intensity is proven to be promoted significantly.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.471-477
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• 1991

Effects of ZnO, PbO and SiO2 on the grain growth and magnetic properties of Sr-ferrite were investigated. (1) Addition of ZnO to Sr-ferrite increased remanence, but decreased coercivity and maximum energy product. (2) Addition of PbO up to 0.5 wt% increased (B$.$H)max of Sr-ferrite, but addition more than 0.5 wt% decreased (B$.$H)mzx (3) SiO2 addition to the 0.5 wt% PbO doped Sr-ferrite decreased remanence and increased coercivity. The coercivity increase in due to the grain refinement effect of SiO2. But addition of SiO2 more than 0.5 wt% invoked a decrease of coercivity and (B$.$H)max of Sr-ferrite due to abnormal grain growth. Sr-ferrite magnet having maximum energy product of 3.7MGOe was fabricated by using the roasting product of Pyrrhotite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.78-79
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• 2009

본 연구에서는 ZnO계 투명전극 소재를 이용하여 RFID 태그 안테나에 적용 가능성 여부를 확인하였다. Si 기판위에 RF 스퍼터링 공정에 의해 Ga-doped ZnO 투명 마이크로스트립 스파이혈 안테나를 $2{\mu}m$를 증착하여 구현하고 그 전기적 특성을 측정하였다. HFSS 전자계 시뮬레이터를 사용하여 13.56MHz HF 주파수 대역에서 태그 안테나로서의 가능성을 검증한 후 Ga-doped ZnO 타겟을 사용한 RF 스퍼터링 공정에 의하여 스파이럴 안테나 패턴을 구현하였다. 마이크로스트립 선폭 및 선 간격을 $50\sim200{\mu}m$때 영역에서 조절하면서 안테나 패턴을 설계하였다. S 파라메터, 자기공진주파수 및 Q값을 시뮬레이션으로부터 도출하였다. Al $2{\mu}m$ 증착한 시편에 비하여 약 -10dB 정도의 이득저하가 발생하였으나 리더-태그를 밀착시킨 조건에서 1.7V (13.56MHz) 전압검출이 가능하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.50.1-50.1
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• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.243.1-243.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.392-392
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• 2011

현재의 태양전지에 사용되는 wafer는 원가저감을 위해 점점 얇아지고 있는 추세이다. 하지만 wafer가 얇아질수록 장파장 영역의 광자는 충분히 활용할 수 없게 된다. 대부분의 광자는 50um 지점에 도달하였을 때 그 역할을 다하고 소멸하게 되며, 특히 800nm 이상의 장파장에 대한 generation rate는 wafer 두께에 따라 급격한 차이를 보이게 된다. 따라서 장파장 영역의 광자를 효율적으로 사용할 뿐만 아니라 원가 저감을 위해 더욱 얇아지고 있는 추세의 wafer의 장파장 이용을 보상하기 위해서 TCO를 이용한 back-reflector의 역할은 가장 좋은 해결책이 될 것이다. 본 연구에서는 Macleod를 이용하여 ZnO, Al-doped ZnO, TiN, TiO2와 같은 다양한 TCO 물질에 대한 다양한 simulation을 실시 하여 reflectance 특성을 알아보았다. 상기 simulation결과로써 Al-doped ZnO가 가장 reflectance 특성이 좋게 나타났었으며 이를 이종접합 태양전지에 적용하여 광학적 및 전기적 특성 변화에 대해서 분석하였다.

• Journal of the Korean Ceramic Society
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• v.25 no.1
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• pp.42-48
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• 1988

Commercially available PTCR (Postive Temperature Coefficient of Resistivity) ceramics which have low room temperature resistance, high PTC effect and temperature coefficient were prepared by La3+ doped semiconducting barium calcium titanate soild solutions. PTCR characteristics were remarkably improved by addition of AST (1/3 Al2O3$.$3/4SiO2$.$1/4TiO2) and MnCl2. That can be explained by formation of liquid phase during sintering and acceptor level on the intergranular layer. Resistivity anormaly increased with decreasing cooling rate. Optimum manufacturing conditions were cooling rate below 100$.$C/hr, Ca and Mn content of 4 mol% &, 0.09-0.12mol% respectively.

• Journal of Magnetics
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• v.16 no.3
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• pp.216-219
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• 2011

Mn doped ZnO films were prepared on Si (100) substrates using sol-gel method. The prepared films were annealed at $550^{\circ}C$ for decomposition and oxidation of the precursors. XRD analysis revealed the presence of ZnMnO hexagonal wurtzite phase along with the presence of small quantity of $ZnMn_2O_3$ secondary phase and poor crystalline nature. The 2D, 3D views of magnetic domains and domain profiles were obtained using magnetic force microscopy at room temperature. Rectangular shaped domains with an average size of 4.16 nm were observed. Magnetic moment measurement as a function of magnetic field was measured using superconducting quantum interference device (SQUID) magnetometry at room temperature. The result showed the ferromagnetic hysteresis loop with a curie temperature higher than 300 K.