• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4205-4209
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• 2011

The $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ silicate was prepared by blending of $Li_2MnSiO_4$ and $Li_2FeSiO_4$ precursors with same molar ratio. The one of the silicates of $Li_2FeSiO_4$ is known as high capacitive up to ~330 mAh/g due to 2 mole electron exchange, and the other of $Li_2FeSiO_4$ has identical structure with $Li_2MnSiO_4$ and shows stable cycle with less capacity of ~170 mAh/g. The major drawback of silicate family is low electronic conductivity (3 orders of magnitude lower than $LiFePO_4$). To overcome this disadvantage, carbon composite of the silicate compound was prepared by sucrose mixing with silicate precursors and heat-treated in reducing atmosphere. The crystal structure and physical morphology of $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ was investigated by X-ray diffraction, scanning electron microscopy, and high resolution transmission electron microscopy. The $Li_2Mn_{0.5}Fe_{0.5}SiO_4$/C nanocomposite has a maximum discharge capacity of 200 mAh/g, and 63% of its discharge capacity is retained after the tenth cycles. We have realized that more than 1 mole of electrons are exchanged in $Li_2Mn_{0.5}Fe_{0.5}SiO_4$. We have observed that $Li_2Mn_{0.5}Fe_{0.5}SiO_4$ is unstable structure upon first delithiation with structural collapse. High temperature cell performance result shows high capacity of discharge capacity (244 mAh/g) but it had poor capacity retention (50%) due to the accelerated structural degradation and related reaction.

• Korean Chemical Engineering Research
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• 제55권3호
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• pp.409-418
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• 2017

자가치유성을 갖는 고분자개질 빙수아스팔트-몬모릴로나이트(MMT) composite 제조를 위하여 양이온($Na^+$)교환 처리된 K-10 (Na-MMT-K)에 대한 3-aminopropyltriethoxysilane (APS) 개질의 특성을 규명하고 적정개질조건을 FTIR, XRD, NMR 및 TGA 등의 분석을 통하여 제시되었다. APS 개질된 Na-MMT-K (S-Na-MMT-K)에 대한 FTIR 분석에서 실란화 반응과 관련된 실록산 결합(Si-O), 아민기, -$CH_2$- 및 -OH 기의 피크의 세기를 비교하였다. 그 결과로서 적정 반응시간, 적정교반시간, 적정농도 및 적정반응온도는 각각 2~3 h, 20 min, 7.5 w/v% 및 $50^{\circ}C$가 도출되었다. 또한 TGA 결과로부터 도출된 적정개질조건도 FTIR 분석에서 도출한 적정개질조건과 거의 일치하였다. 이 도출된 적정개질조건들은 Lee 등의 XRD 분석에서 제시된 기준(criterion)에 의해 도출된 적정반응시간, 적정교반시간, 적정 APS농도 및 적정반응온도와 거의 일치하였다. 따라서 XRD 분석에서 제시된 기준(criterion)이 검증되었다.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.324-329
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• 2018

Red phosphor in glasses (PiGs) for automotive light-emitting diode (LED) applications were fabricated with 620-nm $CaAlSiN_3:Eu^{2+}$ phosphor and Pb-free silicate glass. PiGs were synthesized and mounted on high-power blue LED to make a monochromatic red LED. PiGs were simple mixtures of red phosphor and transparent glass powder. After being fabricated with uniaxial press and CIP at 300 MPa for 20 min, the green bodies were thermally treated at $550^{\circ}C$ for 30 min to produce high dense PiGs. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30% phosphor had a full sintered density. Changes in photoluminescence spectra and color coordination were studied by varying the thickness of plates that were mounted after optical polishing. As a result of the optical spectrum and color coordinates, PiG plate with $210{\mu}m$ thickness showed a color purity of 99.7%. In order to evaluate the thermal stability, the thermal quenching characteristics were measured at temperatures of $30{\sim}150^{\circ}C$. The results showed that the red PIG plates were 30% more thermally stable compared to the AlGaInP red chip.

• 한국재료학회지
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• 제10권9호
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• pp.648-655
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• 2000

다이아몬드 합성 조건에서 질소 첨가량은 0%에서 95%까지 변화하였을 때의 합성 거동을 조사하였다. 질소 첨가량이 증가함에 따라 합성된 상은 {100} 성장면으로 이루어진 다이아몬드 막에서 고유의 결정면이 사라지고 나조 크기의 결정들로 이루어진 다이아몬 막으로 변화하였다. 심지어 수소가 없어 메탄과 질소만의 경우에서도 다이아몬드 막 합성이 가능함을 보여주었다. 또한 다이아몬드 구조를 갖는 개별적 입자의 형태는 30%∼80% 질소 첨가범위에서 정팔면체의 결정모양을 가졌고, 이 범위에서 기판온도가 증가함에 따라 육방정 모양의 새로운 결정상을 관찰하였다. 다이아몬드 막의 경우 질소, 첨가량에 무관하게 질소 혼입향은 측정되지 않을 만큼 적었지만, 육방정 결정상은 Si, C 그리고 N으로 이루어진 SiCN화합물임을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.122-126
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• 1989

A composite polycide struoture consisting of refractory metal and noble metal silicide film on top of polysilicon bas been considered as a replacement for polysilicon as a gate electrode and Interconnect line in MOSFET integrated circuits. In this paper presents divice characteristics of NOS with $TiSi_2/n^+$polyoide and $CoSi_2/n^+$polycide gate. Also, evaporated Ti,Co films on polysilicon has been annealed by RTA and furnace annealing in $N_2$ abient at temperature of $400^{\circ}C-1000^{\circ}C$. The Ti-,Co-silioide formation is characterized by 4-point probe, silicide growth rate and Its reproductivity bas been examined by SEM.

• 센서학회지
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• 제18권2호
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• pp.179-183
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• 2009

Toluene($C_6H_5CH_3$) gas sensors were fabricated using $PtO_x$ loaded with SWNTs by a new deposition method. The nanoparticle powders of SWNTs-$PtO_x$ composite were deposited on Si wafer substrates by a vacuum filtering deposition method. The fabricated sensors were tested against toluene gas which is a kind of the Volatile Organic Compounds. The composition ratio that exhibited the highest response to toluene gases was SWNTs : $PtO_x\;=\;99:1$ in wt% ratio at operating temperature of about $150^{\circ}C$. The response and recovery times of the sensors were as short as less than 1 min., respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.309-309
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• 2007

The LTCCs (low-temperature co-fired ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$<$900^{\circ}C$ are required. In this study, we investigated with glass-ceramic composition, which was crystallized with two crystals. The microstructure, crystal phases, thermal and mechanical properties, and dielectric properties of the composites were investigated using FE-SEM, XRD, TG-DTA, 4-point bending strength test and LCR measurement. The starting temperature for densification of a sintered body was at $779{\sim}844^{\circ}C$ and the glass frits were formatted to the crystal phases, $CaAl_2Si_2O_8$(anorthite) and $CaMgSi_O_6$(diopside), at sintering temperature. The sintered bodies exhibited applicable dielectric properties, namely 6-9 for ${\varepsilon}_r$. The results suggest that the glass-ceramic composite would be potentially possible to application of low dielectric L TCC materials.

• Composites Research
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• 제22권5호
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• pp.15-23
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• 2009

가압주조법으로 제조한 $Al_2O_3$ 섬유와 SiC 입자 혼합 보강 금속복합재료(MMCs)의 상온과 고온에서 윤활마모특성을 조사하였다. 마모시험은 거리와 온도의 변화에 따라 속도를 고정시켜 25Kgf의 하중하에서 수행하였으며 MMCs의 시험편은 가압의 수평(PR)방향과 수직(N)방향에서 채취하였다. 혼합비의 영향을 관찰한 결과 상온에서는 20%섬유만 보강한 PR방향 MMCs의 마모거동은 N방향 보다 우수한 결과를 보였으나, 혼합보강 MMCs는 반대로 나타내었다. 고온($100^{\circ}C$)에는 모든 MMCs에서 PR방향의 마모거동이 N 방향보다 우수한 결과를 보인 것은 보강재와 마찰면간 윤활필름이 강호작용에 기인한 것으로 밝혀졌다. $150^{\circ}C$에서는 혼합 MMCs의 마모거동은 온도영향으로 PR이 N 보다 우수한 결과를 보였다.

• 한국재료학회지
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• 제18권6호
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Composites Research
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• 제35권4호
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• pp.261-268
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• 2022

ZrB₂, ZrC, HfB₂, HfC 및 SiC 등의 초고온 세라믹스(UHTC, ultra-high temperature ceramics)들은 최근 주목 받고 있는 극초음속 체계 및 차세대 우주왕복선 등에 적용하기 위하여 최근 활발한 연구가 진행되고 있다. 본 논문에서는 한국, 중국, 미국, 일본 및 EU 등지에서 최근 5년간 발표된 주요 연구 결과들을 위주로 간략히 소개하였다. 또한 초고온 세라믹스의 단점인 취성 문제를 극복하기 위한 세라믹 섬유강화 복합재료 제조를 목적으로 Horizon 2020 프로그램의 일환으로 범 유럽차원에서 공동연구로 수행된 C³HARME 프로젝트의 내용 및 결과를 간략히 보고하였다.