• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.535-536
• /
• 2005

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• Journal of the Korean Magnetics Society
• /
• v.11 no.5
• /
• pp.189-195
• /
• 2001

We prepared TMR junctions of NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) structure on 2.5$\times$2.5 $\textrm{cm}^2$ area Si/SiO$_2$ substrates in order to investigate the uniformity of magnetoresistance(MR) value using a ICP magnetron sputter. Each layer was deposited by the ICP magnetron sputter and tunnel barrier was formed by the plasma oxidation method. We measured MR ratio and resistance of TMR devices with four-terminal probe system by applying external magnetic field. Although we used ICP sputter which is known as superior to make uniform films, the standard variation of MR ratio was 2.72. The variation was not dependent on the TMR devices location of a substrate. We found that MR ratio and spin-flip field (H's) increased as the resistance increased, which may be caused by local interface irregularity of the insulating layer. The variation of resistance value was 64.19 and MR ratio was 2.72, respectively. Our results imply that to improve the insulating layer fabrication process including annealing process to lessen interface modulation in order to mass produce the TMR devices.

• Journal of the Korea Institute of Building Construction
• /
• v.24 no.2
• /
• pp.181-191
• /
• 2024

In the realm of cement manufacturing, concerted efforts are underway to mitigate the emission of greenhouse gases. A significant portion, approximately 60%, of these emissions during the cement clinker sintering process is attributed to the decarbonation of limestone, which serves as a fundamental ingredient in cement production. Prompted by these environmental concerns, there is an active pursuit of alternative technologies and admixtures for cement that can substitute for limestone. Concurrently, initiatives are being explored to harness technology within the cement industry for the capture of carbon dioxide from industrial emissions, facilitating its conversion into carbonate minerals via chemical processes. Parallel to these technological advances, economic growth has precipitated a surge in construction activities, culminating in a steady escalation of construction waste, notably waste concrete. This study is anchored in the innovative production of calcium silicate cement clinkers, utilizing finely powdered waste concrete, followed by a thorough analysis of their mineral phases. Through X-ray diffraction(XRD) analysis, it was observed that increasing the substitution level of waste concrete powder and the molar ratio of SiO₂ to (CaO+SiO₂) leads to a decrease in Belite and γ-Belite, whereas minerals associated with carbonation, such as wollastonite and rankinite, exhibited an upsurge. Furthermore, the formation of gehlenite in cement clinkers, especially at higher substitution levels of waste concrete powder and the aforementioned molar ratio, is attributed to a synthetic reaction with Al₂O₃ present in the waste concrete powder. Analysis of free-CaO content revealed a decrement with increasing substitution rate of waste concrete powder and the molar ratio of SiO₂/(CaO+SiO₂). The outcomes of this study substantiate the viability of fabricating calcium silicate cement clinkers employing waste concrete powder.

• Journal of the Korean Magnetics Society
• /
• v.16 no.6
• /
• pp.279-282
• /
• 2006

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.7
• /
• pp.486-493
• /
• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Journal of the Korean Ceramic Society
• /
• v.29 no.5
• /
• pp.357-366
• /
• 1992

Residual organics were considered as impurity in Sol-Gel method. The purpose of this study was to find the conditions to contain as much residual organics as possible in silica gel prepared from TEOS(tetraethylortho-silicate) by Sol-Gel method. Residual organics are to be expected to have reduction effect on synthesizing Si3N4 from silica gel. The results of this study are follows: 1) The maximum content of entrapped carbon was 19.8 wt.%(C/SiO2=0.25 wt.ratio) in silica gel synthesized under the conditions 1.5 fold mole water for incomplete hydrolysis, 2.5 fold mole phenol as a solvent and 0.1 fold mole HCl as a catalyst to TEOS. 2) Silica gel with organics entrapped by Sol-Gel method had a positive effect on the formation of Si3N4 compared with commercial silica gel. 3) Sintered body of synthesized $\alpha$-Si3N4 with Y2O3 and Al2O3 as additives at 175$0^{\circ}C$ in N2 atmosphere showed bending strength, 602$\pm$20 MPa and frature toughness 4.45$\pm$0.15 MPa.m1/2.

• Analytical Science and Technology
• /
• v.5 no.4
• /
• pp.433-441
• /
• 1992

Chemical composition and fusibility of coal ash were measured for 23 Korean anthracite coals. The relationship between chemical properties and fusion temperature of coal ash was investigated. The slagging and fouling in firing the pulverized coal for boiler was assessed for the coal samples. It was found that most ashes contained more than 80% of $SiO_2$ and $Al_2O_3$ whereas less than 1% of $Na_2O$. And also fusion temperature of ashes occured relatively higher for Korean coals. Therefore it can be predictable that the slagging and fouling formation has a little problem in a pulverized coal firing system. A base/acid ratio did show a good correlation with fusion temperature for these coal ashes.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.2
• /
• pp.58-61
• /
• 2009

The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{\times}10^{-4}{\Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{\circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{\times}10^{-4}{\Omega}cm$ as-annealed at $300^{\circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{\circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.

• Journal of Powder Materials
• /
• v.24 no.4
• /
• pp.292-297
• /
• 2017

A metallic oxide layer of a heat-resistant element contributes to the high-temperature oxidation resistance by delaying the oxidation and has a positive effect on the increase in electrical resistivity. In this study, green compacts of Fecralloy powder mixed with amorphous and crystalline silica are oxidized at $950^{\circ}C$ for up to 210 h in order to evaluate the effect of metal oxide on the oxidation and electrical resistivity. The weight change ratio increases as per a parabolic law, and the increase is larger than that observed for Fecralloy owing to the formation of Fe-Si, Fe-Cr composite oxide, and $Al_2O_3$ upon the addition of Si oxide. Si oxides promote the formation of $Al_2O_3$ and Cr oxide at the grain boundary, and obstruct neck formation and the growth of Fecralloy particles to ensure stable electrical resistivity.

• Journal of the Korean Ceramic Society
• /
• v.50 no.2
• /
• pp.134-141
• /
• 2013

Pond ash produced from Seochun Power Station was quantitatively characterized to manufacture geopolymers with a range of Si/Al compositional ratios. Mix consistency was kept nearly constant for comparing the compressive strengths of geopolymers. The amorphous composition of coal ash was determined using XRF and quantitative X-ray diffraction. Different mix compositions were used in order to achieve Si/Al ratios of 2.0, 2.5 and 3.0 in the geopolymer binder. Geopolymers synthesized from coal ash with a Si/Al ratio of 3.0 exhibited the highest compressive strength in this study. It was found that geopolymers activated with aluminate produced different microstructure from that of geopolymers activated with silicate. High silica in alkali activators produced the fine-grained microstructure of geopolymer gel. It was also found that high compressive strength was related to low porosity and a dense, connected microstructure. The outcome of the reported experiment indicates that quantitative formulation method made it possible to choose suitable activators for achieving targeted compositions of geopolymers and to avoid efflorescence.