Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Enhancement of Electrical Properties on ZnO: Al Thin Film due to Hydrogen Annealing and SiO2 Coating in Damp-heat Environment

  • Chen, Hao (School of Electrical, Electronic and Information Engineering, Wonkwang University) ;
  • Jeong, Yun-Hwan (School of Electrical, Electronic and Information Engineering, Wonkwang University) ;
  • Park, Choon-Bae (School of Electrical, Electronic and Information Engineering, Wonkwang University)
  • Published : 2009.04.25
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Abstract

The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{\times}10^{-4}{\Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{\circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{\times}10^{-4}{\Omega}cm$ as-annealed at $300^{\circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{\circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.

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References

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