• 자원리싸이클링
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• 제31권2호
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• pp.49-55
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• 2022

본 연구에서는 국내 부존 바나듐 광물인 포천 지역의 바나듐 함유 함티탄철석(VTM: Vanadium-bearing titaniferous magnetite)을 대상으로 하여, 바나듐 회수를 위한 황화 배소 반응의 열역학적 평가를 수행하였다. Na₂SO₄를 이용하여 황화 배소를 진행하는 경우, 배소조건에 따른 배소 후 바나듐 및 불순물의 수침출 거동을 평가하고, 황화 배소 반응에 대한 메커니즘 규명을 위하여 열역학적 평가를 수행하였다. Na₂SO₄를 이용한 황화 배소의 경우 Na₂CO₃를 이용한 염배소 공정과 비교하여 반응 온도는 200 ℃ 정도 높았지만 바나듐 침출률이 높고 Al, Si 등의 불순물에 대한 낮은 침출률을 보였다. 바나듐만 선택적으로 수침출되는 황화 배소 반응의 특징은 기상의 SO₂ 가스와 정광내 바나듐간의 반응에 따른 반응 메커니즘에 기인하는 것으로 예상되었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 춘계학술발표회 초록집
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

• 한국전기전자재료학회논문지
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• 제36권3호
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• pp.298-302
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• 2023

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·cm², resulting in the highest Baliga's figure-of-merit (BFOM) of 92.0 MW/cm². We also investigated the effect of dielectric thickness and field plate length on BV.

• Current Photovoltaic Research
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• 제11권2호
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• 한국전기전자재료학회논문지
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• 제37권3호
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• pp.323-327
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• 2024

The low-temperature coefficient of resistance (TCR) is a crucial factor in the development of space-grade resistors for temperature stability. Consequently, extensive research is underway to achieve zero TCR. In this study, resistors were deposited by co-sputtering nickel-chromium-based composite compositions, metals showing positive TCR, with SiO₂, introducing negative TCR components. It was observed that achieving zero TCR is feasible by adjusting the proportion of negative TCR components in the deposited thin film resistors within certain compositions. Additionally, the correlation between TCR and deposition conditions, such as sputtering power, Ar pressure, and surface roughness, was investigated. We anticipate that these findings will contribute to the study of resistors with very low TCR, thereby enhancing the reliability of space-level resistors operating under high temperatures.

• International Journal of Computer Science & Network Security
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• 제24권6호
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• pp.200-206
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• 2024

Laser induced breakdown spectroscopy (LIBS) technique has been used for the elemental composition of the soils. In this technique, a high energy laser pulse is focused on a sample to produce plasma. From the spectroscopic analysis of such plasma plume, we have determined the different elements present in the soil. This technique is effective and rapid for the qualitative and quantitative analysis of all type of samples. In this work a Q-switched Nd: YAG laser operating with its fundamental mode (1064 nm laser wavelength), 5 nanosecond pulse width, and 10 Hz repetition rate was focused on soil samples using 10 cm quartz lens. The emission spectra of soil consist of Iron (Fe), Calcium (Ca), Titanium (Ti), Silicon (Si), Aluminum (Al), Magnesium (Mg), Manganese (Mn), Potassium (K), Nickel (Ni), Chromium (Cr), Copper (Cu), Mercury (Hg), Barium (Ba), Vanadium (V), Lead (Pb), Nitrogen (N), Scandium (Sc), Hydrogen (H), Strontium (Sr), and Lithium (Li) with different finger-prints of the transition lines. The maximum intensity of the transition lines was observed close to the surface of the sample and it was decreased along the axial direction of the plasma expansion due to the thermalization and the recombination process. We have also determined the plasma parameters such as electron temperature and the electron number density of the plasma using Boltzmann's plot method as well as the Stark broadening of the transition lines respectively. The electron temperature is estimated at 14611 °K, whereas the electron number density i.e. 4.1 × 10¹⁶ cm^-3 lies close to the surface.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.400-406
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• 2024

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

• 한국진공학회지
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• 제21권5호
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• pp.273-278
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• 2012

현재 Hf (Hafnium)을 기반으로한 게이트 유전체의 연구는 여러 분야에서 다양하게 진행되어져 왔다. 이는 기존의 $SiO_2$보다 유전상수 값이 크고, 또한 계속되는 scaling-down 공정에서도 양자역학적인 터널링을 차단하는 특성이 뛰어나기 때문이다. MOSFET 구조에서 유전체 박막의 두께 감소로 인한 전기적 특성 저하를 보완하기 위해서 high-K 재료가 대두되었고 현재 주를 이루고 있다. 그러나 현재까지 $HfO_2$에 대한 nano-mechanical 특성 연구는 부족한 상태이므로 본 연구에서는 게이트 절연층으로 최적화하기 위하여 $HfO_2$ 박막의 nano-mechanical properties를 자세히 조사하였다. 시료는 rf magnetron sputter를 이용하여 Si (silicon) 기판 위에 Hafnium target으로 산소유량(4, 8 sccm)을 달리하여 증착하였고, 이후 furnace에서 400에서 $800^{\circ}C$까지 질소분위기에서 20분간 열처리를 실시하였다. 실험결과 산소 유량을 8 sccm으로 증착한 시료가 열처리 온도가 증가할수록 누설전류 특성 성능이 우수 해졌다. Nano-indenter로 측정하고 Weibull distribution으로 정량적 계산을 한 결과, $HfO_2$ 박막의 stress는 as-deposited 시료를 기준으로 $400^{\circ}C$에서는 tensile stress로 변화되었다. 그러나 온도가 증가(600, $800^{\circ}C$)할수록 compressive stress로 변화 되었다. 특히, $400^{\circ}C$ 열처리한 시료에서 hardness 값이 (산소유량 4 sccm : 5.35 GPa, 8 sccm : 5.54 GPa) 가장 감소되었다. 반면에 $800^{\circ}C$ 열처리한 시료에서는(산소유량 4 sccm : 8.09 GPa, 8 sccm : 8.17 GPa) 크게 증가된 것을 확인하였다. 이를 통해 온도에 따른 $HfO_2$ 박막의 stress 변화를 해석하였다.

• 한국해양학회지:바다
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• 제19권1호
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• pp.53-65
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• 2014

춘계와 하계 광양만에서 식물플랑크톤 군집구조와 그들의 성장에 영향을 미치는 영양염제한 특성을 파악하기 위해서 만내외측의 20개 정점에서 생물학적 요인과 무생물학적 요인을 조사했다. 또한 식물플랑크톤 군집에 대한 영양염 첨가 효과를 알아보기 위해서 실험실에서 현장 20개 정점의 표층수를 이용하여 생물검정실험을 수행하였다. 전체 식물플랑크톤 군집의 90%이상을 규조류가 차지하였다. 이들 규조류중 Eucampia zodiacus와 Skeletonema costatum-like 종이 춘계와 하계에 각각 우점하였다. E. zodiacus와 S. costatum-like 규조류의 개체군 밀도가 춘계와 하계에 높은 밀도를 유지하게 된 이유를 간단히 설명하면, E. zodiacus 의 성장은 춘계 투명도가 높게 나타나 유광층내 광량의 증가가 원인으로 생각된다. 즉 유광층내 광량의 증가는 E. zodiacus의 개체수를 폭발적으로 증가시킬 수 있는 방아쇠 역할을 한 것으로 판단된다. 하계에 S. costatum-like이 전해역에서 우점한 이유는, 섬진강 담수 유입에 의한 낮은 염분과 함께 공급된 다량의 영양염은 그들 생물의 증식에 중요한 bottom-up 효과를 보였다고 판단된다. 실험실의 생물검정실험에서는 비록 내만(정점 8)과 외해(정점 20)에서 식물플랑크톤 군집의 최대 성장율은 유사하였지만, 인산염에 대한 반포화계수($K_s$)는 내만정점보다 약간 낮았다. 상대적으로 낮은 영양염농도에 적응한 세포는 낮은 인산염농도에서 충분히 성장할 수 있고, 다른 미세조류에 비하여 낮은 영양염농도의 조건에서 경쟁의 우위를 차지 할 것이다. 특히, 하계의 N영양염 첨가군의 효율은 대조군과 P영양염 첨가군에 비해서 높았다. 이는 광양만에서 하계에 N영양염의 공급이 섬진강을 통하여 계속적으로 유입되지만, 빠른 식물플랑크톤의 증식으로 인하여 N영양염 제한이 일어날 수 있다는 것을 시사할 수 있다. 반면, 규산염은 식물플랑크톤의 성장에 영향을 미치는 제한인자로 나타나지 않았고, 규조류의 분해로 인하여 Si의 재순환과 담수로부터 공급된 높은 규산염농도는 광양만에서 규조류 생태계를 유지할수 있는 유리한 조건이라 생각된다.