• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.242-242
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• 2012

From the combined studies of STM and synchrotron photoemission, it has been found that a $CaF_2$ molecule is dissociated to Ca and F atoms on the $Si(114)-2{\times}1$ held at $500^{\circ}C$ at the initial adsorption stage. The Ca atoms form isolated and unique shapes of silicide molecules as shown in Fig. (a), while the F atoms are desorbed from the surface. On the other hand, beyond a $CaF_2$ coverage of 0.3 monolayer, as shown in Fig. (b), in addition to these silicide molecules, a 1-D facet [composed of (113) and (115) faces] adjacent to an etch pit has been observed, and F atoms are also detected from photoemission. These results imply that F atoms act as an etchant on Si(114) and CaF is adsorbed selectively on the (113) face of this facet. From the present studies, it has been concluded that, an insulating $CaF_2$ layer like that on Si(111) cannot be formed on Si(114), but a CaF-decorated nanofacet with a high aspect-ratio can be grown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.113-114
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• 2007

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.112-113
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• 2007

$SiO_2$ 절연 박막위에 희석된 PMMA 유기물을 처리하였다. 유기물 처리량에 따른 $SiO_2$ 박막의 $620{\sim}1100\;cm^{-1}$ 영역의 FTIR 스펙트라를 분석한 결과 0.3~0.7%로 PMMA 처리된 박막에서 친핵성 반응이 밀어나는 것을 확인하였으며, 친핵성 반응이 일어나는 박막들에서 누설전류가 적었으며, 절연특성이 우수한 것을 확인하였다.

• Journal of Mechanical Science and Technology
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• v.20 no.5
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• pp.681-691
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• 2006

Nucleate boiling heat transfer for refrigerants, R113, and R113+wt4% ethanol mixture, an azeotropic mixture under electric field was investigated experimentally in a single-tube shell/ tube heat exchanger. A special electrode configuration which provides a more uniform electric field that produces more higher voltage limit against the dielectric breakdown was used in this study. Experimental study has revealed that the electrical charge relaxation time is an important parameter for the boiling heat transfer enhancement under electric field. Up to 1210% enhancement of boiling heat transfer was obtained for R113+wt4% ethanol mixture which has the electrical charge relaxation time of 0.0053 sec whereas only 280% enhancement obtained for R113 which has relaxation time of 0.97 sec. With artificially machined boiling surface, more enhancement in the heat transfer coefficient in the azeotropic mixture was obtained.

• Proceedings of the KWS Conference
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• 1993.05a
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• pp.113-114
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• 1993

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.108-108
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.182-183
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.140-140
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.113-113
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• 1999

최근의 고품질 III-N 화합물 반도체 박막성장과 더불어 청색계열의 LED 및 LD의 성공적인 실현은 본 연구분야에 대한 새롭고 헌신적인 상업적, 학문적/ 기술적 투자환경을 유도해 나가고 있다. 특히, c-축 배향 단결정 사파이어를 기판재료로 사용하고 얇은 GaN buffer의 사용은 고온에서 그 위에 성장되는 성장박막의 특성을 크게 향상시키는 것으로 알려져 있다. 그러나 절연체를 기판으로 사용함에 따른 소자구조 및 제작공정의 복잡성과 기판과 GaN 박막사이의 큰 격자 부정합에 따른 결함센터 등은 소자의 전기, 광학적, 구조적 특성에 부정적인 영향을 미치고 있다. 이러한 문제점을 해결하고 양질의 박막을 성장하기 위한 GaN 혹은 그 대체 기판의 개발에 많은 연구투자가 이루어지고 있는 현실 속에서 Si을 기판으로 이용한 GaN 성장의 가능성이 조심스럽게 점쳐지고 있다. 현재까지의 연구결과를 참조할 때 대체로 복잡한 interlayer를 사용하여 박막성장이 일부 이루어졌으나 그 재현성이나 성장의 중요인자에 대한 해석은 아직 분명하게 밝혀져 있지 않다. 본 연구에서는 원자적 관점에서 Si의 표면에 일부 변화를 유도하고, MOCVD 방법으로 그 위에 성장되는 GaN 박막의 광학적 및 표면 morphology 등에 미치는 영향을 분석하여 핵심적인 성장인자를 추출하고자 시도하였다. 성장된 GaN/Si 박막의 물성은 SEM(AFM), PL, XRD, Auger depth profile 장비등을 이용하여 조사하였으며 사파이어 기판 위에 성장된 GaN 박막의 특성들과 비교 검토하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.8
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• pp.1015-1021
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• 2010

In this study, the effect of the C/SiC composition ratio on the impact damage of a reaction sintered SiC (RS-SiC) plates was evaluated. An impact test was conducted by using an air gun. The impacter used was a steel ball with a diameter of 2 mm, and the impact velocities were 113, 122, and 180 m/s. The RS-SiC plates were $20\times20\times3$ mm with different C/SiC composition ratios. The ring crack diameters damaged by a steel ball were determined using SEM images. It was observed that the maximum diameter increased with increasing impact velocity, and it rapidly changed with increasing C/SiC composition ratio because of the effect of residual Si and the variation flexural strength. Cone cracks were formed in the case of C/SiC composition ratios of 0.4~0.5, this indicated that the impact damage changed from a ring crack to a cone crack in this critical range of C/SiC composition ratios. The C/SiC composition ratio of 0.3 was determined to be the optimal ratio for the RS-SiC manufacturing process.