• Title/Summary/Keyword: Si(111)

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Characteristics in the Deposition of Mn-Zn Ferrite Thin Films by Ion Beam Sputtering Using a Single Ion Source (단일 이온원을 사용하는 이온빔 스퍼터링법에 의한 Mn-Zn 페라이트 박막의 증착 기구)

  • Jo, Hae-Seok;Ha, Sang-Gi;Lee, Dae-Hyeong;Hong, Seok-Gyeong;Yang, Gi-Deok;Kim, Hyeong-Jun;Kim, Gyeong-Yong;Yu, Byeong-Du
    • Korean Journal of Materials Research
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    • v.5 no.2
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    • pp.239-245
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    • 1995
  • Mn-Zn ferrite thin films were deposited on $SiO_2(1000 \AA)/Si(100)$ by ion beam sputtering using a single ion source. A mosaic target consisting of a single crystal(ll0) Mn-Zn ferrite with a Fe metal strip on it was used. As-deposited films without oxygen gas flow have a wiistite structure due to oxygen deficiencies, which originated from the extra metal atoms sputtered from the metal strips during deposition. The as-deposited films with oxygen gas flow, however, have a spinel structure with (111) preferred orientation. The crystallization of thin films was maximized at the ion beam extraction voltage of 2.lkV, at which the deposited films are bombarded appropriately by the energetic secondary ions reflected from the target. As the extraction voltage increased or decreased from the optimum value, the crystallinity of thin films becomes poor owing to a weak and severe bombardment of the secondary ions, respectively. Crystallization due to the bombardment of the secondary ions was also maximized at the beam incidence angle of $55^{\circ}$. The as-deposited ferrite thin films with a spinel structure showed ferrimagnetism and had an in-plane magnetization easy axis.

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The Optimization of $0.5{\mu}m$ SONOS Flash Memory with Polycrystalline Silicon Thin Film Transistor (다결정 실리콘 박막 트랜지스터를 이용한 $0.5{\mu}m$ 급 SONOS 플래시 메모리 소자의 개발 및 최적화)

  • Kim, Sang Wan;Seo, Chang-Su;Park, Yu-Kyung;Jee, Sang-Yeop;Kim, Yun-Bin;Jung, Suk-Jin;Jeong, Min-Kyu;Lee, Jong-Ho;Shin, Hyungcheol;Park, Byung-Gook;Hwang, Cheol Seong
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.10
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    • pp.111-121
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    • 2012
  • In this paper, a poly-Si thin film transistor with ${\sim}0.5{\mu}m$ gate length was fabricated and its electrical characteristics are optimized. From the results, it was verified that making active region with larger grain size using low temperature annealing is an efficient way to enhance the subthreshold swing, drain-induced barrier lowering and on-current characteristics. A SONOS flash memory was fabricated using this poly-Si channel process and its performances are analyzed. It was necessary to optimize O/N/O thickness for the reduction of electron back tunneling and the enhancement of its memory operation. The optimized device showed 2.24 V of threshold voltage memory windows which coincided with a well operating flash memory.

Crystal Structure of Antimony-sorbed Indium-exchanged Zeolite A (인디움 제올라이트 A의 안티몬 흡착과 결정구조)

  • Lim, Woo Taik;Lee, Hyun Su;Heo, Nam Ho
    • Analytical Science and Technology
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    • v.16 no.5
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    • pp.375-390
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    • 2003
  • A single crystal of fully indium-exchanged zeolite A (In-A) was brought into contact with antimony in a fine Pyrex capillary at $350^{\circ}C$ for 6 days. The reaction was monitored by electron-probe X-ray microanalysis (EPXMA). The crystal structure of antimony-sorbed indium-exchanged zeolite A has been determined by single-crystal X-ray diffraction techniques at $21^{\circ}C$ in the cubic space group Pm ${\bar{3}}m$. The crystal structure of $In_8Si_{12}Al_{12}O_{48}{\cdot}(In)_{1.35}(Sb)_{0.7}$ ($a=12.111(2){{\AA}}$, $R_1=0.071$, and $R_2=0.067$) has 8 indium cations, 1.35 indium atoms, and 0.7 antimony atoms per unit cell. Unit cell 1 ($In_8-A{\cdot}In$, 65% of unit cells) contain the $(In_5)^{8+}$ cluster. In unit cell 2 ($In_8-A{\cdot}(In)_2(Sb)_2$, 35% of unit cells), two $(In_3)^{2+}$ cluster and one $(In_3Sb_2)^{7+}$ cluster are found in the large cavity.

Effects of Ultrathin Co Insertion Layer on Magnetic Anisotropy and GMR Properties of NiFe/Cu/Co Spin Valve Thin Films (NiFe/Cu 계면에 삽입된 Co 층이 NiFe/Cu/Co 스핀밸브 박막의 거대자기저항 특성과 자기이방성에 미치는 영향)

  • 김형준;조권구;주승기
    • Journal of the Korean Magnetics Society
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    • v.9 no.5
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    • pp.251-255
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    • 1999
  • NiFe(60 $\AA$)/Co(0$\AA$$\leq$x$\AA$$\leq$15$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were prepared on 4$^{\circ}$ tilt-cut Si(111) substrates with a 50 $\AA$ thick Cu underlayer without applying any external magnetic field during the deposition, and the effects of inserted ultrathin Co layer on magnetic anisotropy and GMR properties of the NiFe(60 $\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valves were investigated. As the ultrathin Co layer was inserted into the NiFe/Cu interface of the spin valves, GMR ratio was increased from about 1.5% to 3.5%, and the easy axis of NiFe(60 $\AA$) layer was rotated by 90$^{\circ}$. Accordingly, it was aligned along the same direction with the easy axis of Co(30 $\AA$)layer. Therefore, squared R-H curves was obtained in the spin valves, which is favorable properties for the digital GMR devices such as MRAM. In order to investigate the change of magnetic anisotropy of NiFe layer of the spin valves in more details,XRD measurement was performed using NiFe(500 $\AA$) and NiFe(500 $\AA$)/Co(10 $\AA$) thin films on the same templates. Strong (220) NiFe peak was observed in both films regardless of the inserted Co layer, so it was thought that the variation of magnetic anisotropy of NiFe layer is from the interface effect, the change of interface from NiFe/Cu to NiFe/Co, rather than the volume effect such as the change of magnetocrystalline effect.

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MR Characteristics of CoO based Magnetic tunnel Junction (CoO를 절연층으로 이용한 스핀 의존성 터널링 접합에서의 자기저항 특성)

  • 정창욱;조용진;안동환;정원철;조권구;주승기
    • Journal of the Korean Magnetics Society
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    • v.10 no.4
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    • pp.159-163
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    • 2000
  • MR characteristics in magnetic tunnel junction using CoO as the oxide barrier were investigated. Spin-dependent tunnel junctions were fabricated on 4$\^$o/ tilt-cut (111)Si substrates in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$\_$80/Fe$\_$20/(300 $\AA$) and Co(300 $\AA$), respectively. The oxide barriers (CoO) were formed by the thermal oxidation at room temperature in an O$_2$ atmosphere and the plasma oxidation. The increase of coercive field due to antiferromagnetic-ferromagnetic coupling has been observed in O$_2$plasma-oxidized CoO based junctions at room temperature. At a sensing current of 1 mA, MR ratios of O$_2$plasma-oxidized CoO based junction and thermal-oxidized CoO based junction at room temperature were 1% and 5%, respectively. Larger MR ratios are observed in magnetic tunnel juctions with thermal oxidized CoO when sensing current more than applied 1.5 mA. At a sensing current of 1.5 mA, we have observed MR value of 28 % and specific resistance (RA=R$\times$A) value of 10.9 ㏀$\times$$^2$. When specific resistance values reached 2.28 ㏀$\times$$^2$, we have observed that MR ratios become as high as 120%.

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Metalorganic Chemical Vapor Deposition of Copper Films on TiN Substrates Using Direct Liquid Injection of (hfac)Cu(vtmos) Precursor ((hfac)Cu(vtmos)의 액체분사법에 의한 TiN 기판상 구리박막의 유기금속 화학증착 특성)

  • Jun, Chi-Hoon;Kim, Youn-Tae;Kim, Dai-Ryong
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1196-1204
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    • 1999
  • We have carried out copper MOCVD(metalorganic chemical vapor deposition) onto the reactive sputtered PVD-TiN and rapid thermal converted RTP-TiN substrates using direct liquid injection for effective delivery of the (hfac)Cu(vtmos) [$C_{10}H_{13}O_{5}CuF_{6}$Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] precursor. Especially, the influences of deposition conditions and the substrate type on growth rate, crystal structure, microstructure, and electrical resistivity of copper deposits have been discussed. It is found that the film growth with 0.2ccm precursor flow rate become mass-transfer controlled up to Ar flow rate of 200sccm and pick-up rate controlled at a vaporizer above 1.0Torr reactor pressure. The surface-reaction controlled region from 155 to 225$^{\circ}C$ at 0.6Torr reactor pressure results in the apparent activation energies of 12.7~14.1kcal/mol, and above 224$^{\circ}C$ the growth rate with $H_2$ addition could be improved compared to the pure Ar carrier. The Cu/RTP-TiN structures which have high copper nucleation density in initial stage of growth show more pronounced (111) preferred orientations and lower electrical resistivities than those on PVD-TiN. The variation of electrical resistivity with substrate temperature reflects the three types of film microstructure changes, showing the lowest value for the deposit at 165$^{\circ}C$ with small grains of good contacts.

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Feasibility of Korean Rice Husk Ash as Admixture for High Strength Concrete: Particle Size Distribution, Chemical Composition and Absorption Capacity Depending on Calcination Temperature and Milling Process (고강도 콘크리트 혼화재로서 국산 왕겨재의 활용 가능성: 소성 온도와 분쇄공정 유무에 따른 입도, 성분 및 흡습 성능)

  • Kwon, Yang-Hee;Hong, Sung-Gul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.4
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    • pp.111-117
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    • 2017
  • This study examined the material properties of Korean rice husk ash (RHA) according to the manufacturing process, and evaluated the feasibility of its use as a new admixture for high strength concrete. For this purpose, its particle size distribution, chemical composition, and microstructure were analyzed under various parameters, such as calcination temperature ($400^{\circ}C$, $650^{\circ}C$, and $900^{\circ}C$) and the inclusion of a milling process. X-ray fluorescence analysis confirmed that the silicon oxide ($SiO_2$) content of RHA was improved to more than 92% with a calcination process at $650^{\circ}C$ or higher. In addition, microstructural analysis showed that the RHA calcined at $650^{\circ}C$ has a porous structure. Because of this, the absorption capacity of the RHA was improved. On the other hand, when the milling process was applied, the porous structure was destroyed; thus, the absorption capacity tended to decrease further. Based on the analysis results, it was concluded that RHA calcined at $650^{\circ}C$ can be used as an admixture for high strength concrete, which possesses functions of both a shrinkage reducing agent and a pozzolanic activator.

Two Anhydrous Zeolite X Crystal Structures, $Ca_{18}Tl_{56}Si_{100}Al_{92}O_{384}\;and\;Ca_{32}Tl_{28}Si_{100}Al_{92}O_{384}$ (제올라이트 X의 두 개의 무수물 $Ca_{18}Tl_{56}Si_{100}Al_{92}O_{384}$$Ca_{32}Tl_{28}Si_{100}Al_{92}O_{384}$의 결정구조)

  • Choi, Eun Young;Kim, Yang
    • Journal of the Korean Chemical Society
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    • v.43 no.4
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    • pp.384-385
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    • 1999
  • Two anhydrous crystal structures of fully dehydrated, $Ca^{2+}$- and $Tl^+$-exchanged zeolite X, TEX>$Ca_{18}Tl_{56}Si_{100}Al_{92}O_{384}($Ca_{18}Tl_{56}$-X;\alpha=24.883(4)\AA)$ and TEX>$Ca_{32}Tl_{28}Si_{100}Al_{92}O_{384}($Ca_{32}Tl_{28}$-X;\alpha=24.973(4)\AA)$ per unit cell, have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at $21(1)^{\circ}C.$ $Ca_{18}Tl_{56}-X$ was prepared by ion exchange in a flowing stream of 0.045 M aqueous $Ca(NO_3)_2$ and 0.005 M $TlNO_3$. $Ca_{32}Tl_{28}-X$ was prepared similarly using a mixed solution of 0.0495 M $Ca(NO_3)_2$ and 0.0005M $TlNO_3$. Each crystal was then dehydrated at 360 $^{\circ}C$ and $2{\times}10^{-6}$ Torr for 2 days. Their structures were refined to the final error indices, $R_1=0.039\;and\;R_2=0.036$ with 382 reflections for $Ca_{18}Tl_{56}-X$ , and $R_1=0.046\;and\;R_2=0.045$ with 472 reflections for $Ca_{32}Tl_{28}$-X for which $/>3\sigma(I).$ In the structures of dehydrated $Ca_{18}Tl_{56^-}X\;and\;Ca_{32}Tl_{28}$-X, $Ca^{2+}\;and\;Tl^+$ ions are located at six crystallographic sites. Sixteen $Ca^{2+}$ ions fill the octahedral sites I at the centers of double six rings ($Ca_{18}Tl_{56}$-X:Ca-O=2.42(1) and O-Ca-O=93.06(4)$^{\circ}$; $Ca_{32}Tl_{28}$-X Ca-O=2.40(1) $\AA$ and O-Ca-O=93.08(3)$^{\circ}$). In the structure of $Ca_{18}Tl_{56}$-X, another two $Ca^{2+}$ ions occupy site II (Ca-O=2.35(2) $\AA$ and O-Ca-O=111.69(2)$^{\circ}$) and twenty six $Tl^+$ ions occupy site II opposite single six-rings in the supercage; each is 1.493 $\AA$ from the plane of three oxygens $(Tl-O=2.70(8)\AA$ and O-Tl-O=92.33(4)$^{\circ}$). About four $Tl^+$ ions are found at site II',1.695 $\AA$ into sodalite cavity from their three oxygen plane (Tl-O=2.81 (1) and O-Tl-O=87.48(3)). The remaining twenty six $Tl^+$ ions are distributed over site III'(Tl-O=2.82 (1) $\AA$ and Tl-O=2.88(3)$^{\circ}$). In the structure of $Ca_{32}Tl_{28}$-X, sixteen $Ca^{2+}$ ions and fifteen $Tl^+$ ions occupy site III' (Ca-O=2.26(1) $\AA$ and O-Ca-O=119.14(4)$^{\circ}$; Tl-O=2.70(1) $\AA$ and O-Tl-O=92.38$^{\circ}$) and one $Tl^+$ ion occupies site II'. The remaining twelve $Tl^+$ ions are distributed over site III'. It appears that $Ca^{2+}$ ions prefer sites I and II in that order and $Tl^+$ ions occupy the remaining sites.

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Ni/Au Electroless Plating for Solder Bump Formation in Flip Chip (Flip Chip의 Solder Bump 형성을 위한 Ni/Au 무전해 도금 공정 연구)

  • Jo, Min-Gyo;O, Mu-Hyeong;Lee, Won-Hae;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.6 no.7
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    • pp.700-708
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    • 1996
  • Electroless plating technique was utilized to flip chip bonding to improve surface mount characteristics. Each step of plating procedure was studied in terms pf pH, plating temperature and plating time. Al patterned 4 inch Si wafers were used as substrstes and zincate was used as an activation solution. Heat treatment was carried out for all the specimens in the temperature range from room temperature to $400^{\circ}C$ for $30^{\circ}C$ minutes in a vacuum furnace. Homogeneous distribution of Zn particles of size was obtained by the zincate treatment with pH 13 ~ 13.5, solution concentration of 15 ~ 25% at room temperature. The plating rates for both Ni-P and Au electroless plating steps increased with increasing the plating temperature and pH. The main crystallization planes of the plated Au were found to be (111) a pH 7 and (200) and (111) at pH 9 independent of the annealing temperature.

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A Study on the Variation of Physical Properties on the Secondary Product of Cement by Using Crushed Stone Powder (폐석분을 사용한 시멘트 2차 제품의 물리적 특성에 관한 연구)

  • Park, Ji-Sun;Lee, Sea-Hyun;Song, Hun
    • Journal of the Korean Recycled Construction Resources Institute
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    • v.6 no.4
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    • pp.103-111
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    • 2012
  • One of the basic physical properties of the hardened cement paste, the rigidity, is deteriorated during concrete matrix forming, depending on the replacement rate of the crushed stone powder, and due to drying shrinkage. Therefore, the concrete containing crushed stone powder has been limitedly used as non-structural construction material. To improve these disadvantages, a hydrothermal reaction employing method can be considered. High-temperature and high-pressure water is involved in the hydrothermal reaction in the mixing with specific materials. The rigidity improving mechanism is related to the synthesis of calcium silicate. The calcium silicate is produced through reaction between calcium compounds and the silicic acid. Various kinds of calcium silicate can be produced depending on the CaO/$SiO_2$ mole ratio, the temperature of the hydrothermal synthesis, the pressure, and the reaction time. The product of the synthesis mechanism, tobermorite crystal, plays a pivotal role for the rigidity reinforcement. The crushed stone powder, analyzed in this study, contains 50 to 60% of $SiO_2$ and 10 to 20% $Al_2O_3$. The composite rate is appropriate to create the tobermorite crystal through formation of hardened cement matrix under the hydrothermal synthetic conditions and with the CaO in the cement. Moreover, further reinforcement was promoted using the property of material under the identical density through promoting the formation of tobermorite crystal.

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