• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.325-329
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• 1998

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.121-124
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• 1999

The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.467-473
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• 1996

Heteroepitaxial growth of cubic silicon carbide films on Si(001) and Si(111) substrates at temperatures 900-$1000^{\circ}C$ has been achieved by high vacuum chemical vapor deposition using the single precursor 1, 3-disilabutane without carrying out the carbonization process of the substrate surfaces. The deposition temperature range is much lowered compared with conventiontional chemical vapor deposition where separate sources for silicon and carbon are employed. The deposition procedure is quite simple and safe. The qualities of the films were found to be very good judging from the results obtained by various characterization techniques including reflection high energy electron diffraction, X-ray diffraction, X-ray pole figure analysis, Rutherford backscattering spectrometry, Auger depth profiling, and transmission electron diffraction.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.107-111
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• 2015

Current characteristic curve of an illuminated solar cell was used to determine its reverse saturation current density ($J_0$), ideality factor (n) and resistances, by using numerical diode simulation. High efficiency amorphous silicon, heterojunction crystalline Si (HIT), plastic and organic-inorganic halide perovskite solar cell shows n=3.27 for a-Si and n=2.14 for improved HIT cell as high and low n respectively, while the perovskite and plastic cells show n=2.56 and 2.57 respectively. The $J_0$ of these cells remain within $7.1{\times}10^{-7}$ and $1.79{\times}10^{-8}A/cm^2$ for poorer HIT and improved perovskite solar cell respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.41-43
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• 2004

Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.393-394
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• 2005

SBN25 박막을 씨앗층으로 사용하여 이온빔으로 증착한 SBN60/SBN25 다층박막에 대하여 결정화 및 배향 특성을 고찰하였다. 기판은 Pt(111)/TiO2/SiO2/Si(100) 웨이퍼 (Pt 두께 200nm)를 사용하였으며, 약 3000${\AA}$으로 증착한후 650~$750^{\circ}C$에서 후열처리를 하였다. 제작된 박막의 증착조건 및 열처리 조건에 따른 결정화특성 변화에 대하여 연구하였으며, SBN 박막을 MFM 구조의 박막커패시터로 제조하여 강유전특성을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.18-19
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• 2006

The bismuth zinc niobate(BZN) pyrochlore thin films were fabricated on Pt(111)/Ti/$SiO_2$/p-Si(100) substrates using a reactive rf magnetron sputtering method at the conditions of working gas ratio Ar:$O_2$=90:10, substrate temperate $R.T{\sim}600^{\circ}C$, rf power 50 W. The dielectric constant, tunability, leakage current density and crystallinity of thin films changed with a substrate temperate. The BZN pyrochlore thin films sputtered with a substrate temperature of $600^{\circ}C$ and RTA at $800^{\circ}C$ showed a leakage current density lower than $10^{-8}\;A/cm^2$ at the range of ${\pm}300\;kV/cm$.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.2
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• pp.111-117
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• 1994

Effect of rapidly solidfid 6.5wt%Si-Fe alloy annealed in the sulfur atmosphere were studied. The ribbons Which were showed with random structure at the received state, were developed into(110) texture in the heat treatment of the vacuum atmosphere, into (100)texture in the sulfur atmosphere. After the ribbon was continuously annealed in the vacuum atmosphere for 3 min. at $1100^{\circ}C$, and sulfur atmosphere for 1hr at $1175^{\circ}C$, grain size of (100)plane was grew to 4-8mm and the coercive force was decreased to 2-4A/m remarkably.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.163-163
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.300.1-300.1
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• 2007