• Journal of the Korean Society for Nondestructive Testing
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• v.18 no.2
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• pp.103-111
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• 1998

A nondestructive ultrasonic technique is presented for estimating the reinforcement volume fractions of particulate composites. The proposed technique employs a theoretical model which accounts for composite microstructures, together with a measurement of ultrasonic velocity to determine the reinforcement volume fractions. The approach is used for a wide range of SiC particulate reinforced Al matrix ($SiC_p/Al$) composites. The method is considered to be reliable in determining the reinforcement volume fractions. The technique could be adopted in a production unit for the quality assessment of the metal matrix particulate composite extrusions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.101-105
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• 2007

We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},\;N_{2}\;and\;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{\sim}60nm$ with the length of several ${\mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01\;mA/cm^{2}$ are $10\;V/{\mu}m\;and\;8.5\;V/{\mu}m$ for the wires grown at $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$, respectively.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.895-898
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• 1999

We calculated Al-Absorption, Al-reflection, and Si-etching probabilities as a function of incident angle and energy using classical molecular dynamics (MD) simulation. Variations of the cases of Al-absorption rate and Al-reflection rate are less than that of Si-etching rate. In contrast with general prediction, our simulation results showed that channeling of the <110> direction occurred the most in the case of incident angle between 30degree and 40degree. We investigated that channeling of the <110> directions quite affect Al-absorption rate in silicon. Since Si-etching rate is high and Al-absorption rate by <110> channeling is high, we found that Al ionized physical vapor deposition (PVD) on Si(001) has a different characteristics with Al ionized PVD on A1(111).

• Journal of the Korean institute of surface engineering
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• v.43 no.5
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• pp.224-229
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• 2010

$Ni-Si_3N_4$ nano-composite coatings were prepared by pulse current (PC) electrodeposition and direct current (DC) electrodeposition techniques. The micro-structure of the coatings was characterized by scanning electron microscopy (SEM), vickers microhardness, X-Ray Diffraction (XRD) and wear-friction tests. The results showed that the micro-structure and wear performance of the coatings were affected by the electrodeposition techniques. Pulse current electrodeposited $Ni-Si_3N_4$ composite coatings exhibited higher microhardness, smooth surface, and better wear resistance properties as compared to coatings prepared under DC condition. The $Ni-Si_3N_4$ composite coatings prepared at 50 Hz pulse frequency with 10% duty cycles has shown higher codeposition of nano-particles. Consequently, increased microhardness and less plastic deformations occurred in coatings during sliding wear test. The XRD patterns revealed that the increased pulse frequencies changed the preferred (100) nickel crystallite orientations into mixed (111) and (100) orientations.

• Journal of Welding and Joining
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• v.18 no.5
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• pp.105-111
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• 2000

The wear behavior of thermal sprayed AlSiMg-40TiC composite coatings were studied as a function of load and sliding velocity under unlubricated conditions. Experiments were performed using a block-on-ring(WC-6wt%/Co, Hv 1500) type. The tests were carried out a various load(30∼ 125.5N) and sliding velocity(0.5∼2.0m/s). Three wear rate regions were observed in the AlSiMg-40TiC composite coatings. The wear rate in region I at low load (less then 8N( were less than 1×{TEX}$10^{-5}${/TEX}㎣/m. Low wear rates in region I resulted from the load-bearing capacity of TiC particles. The transition from region I to II occurred when the applied load exceeded the fracture and pull-out strength of the particles. The TiC fractured particles trapped between the specimen and the counterface acted as third-body abrasive wear. The subsurface layer worn surface in region II was composed of the mechanically mixed layer (MML). The wear rate increase abruptly above a critical load (region III). The high wear rate in region III was induced by frictional temperature and involves massive surface damage.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.41-45
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• 1984

The production of high-quality epitaxial layers almost always involves an etching step of silicon substrates with HCl gas prior to epitaxy, In this work, an investigation has been made on the etch rate and the etch-pit formation as a function of HCl gas concentration and etch temperature at atmospheric pressure (1 atm.) and reduced pressure (0.1 atom.). As a result, it is found that the etch rate is proportional to the square of the HCI gas concentration (XHC12) and the apparent ativation energy is between 0 and 111 Kcal/mole for both ammospheric and reduced pressure operation. From these results, it is expected that the HCI etching of silicon in reduced pressure operation proceeds, as in atmospheric operation, via the reaction ; Si + 2HCl ↔ SiCl2 + H2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.216-217
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• 2008

Zinc-oxide films were deposited by pulsed laser deposition (PLD) technique using doped ZnO target (mixed $In_2O_3$ 0.1, 0.3, 0.6 at. % - atomic percentage) on the p-type Si(111) substrate. A little Indium has added at the n-ZnO films for the electron concentration control and enhanced the electrical properties. Also, post thermal annealed ZnO films are shown an enhanced structural and controled electron concentration by the annealing condition for the hetero junction diode of a better emitting characteristics. The electrical and the diode characteristics of the ZnO films were investigated by using Hall effect measurement and current-voltage measurement.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.665-672
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• 2000

The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.147-147
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• 2000

Chemisorption of oxygen molecules on the Si(111)-(7x7) surface has been studied extensively as a model for the initial-stage oxidation of the surface. The basic step to the surface oxidation is the dissociation of the adsorbed O2 molecules, but the dissociation procedure and the atomic structure of the reaction products still remains as a subject of debates. We present here density-functional theory calculations on the initial-stage oxidation states of the Si adatom site for all possible dissociation configurations that can be generated by multiple O2 reactions. We determine the equilibrium structures and analyze their electronic and vibrational properties in comparison with measured UPS, XPS, and EELS spectra. The O(ad) atom bonded on top of the Si adatom is always less stable than the O(ins) atom inserted into one of the adatom backbonds. Our electronic and vibrational analysis demonstrates further that the O(ad) and O(ins) atoms account well for the metastable and stable features in previous experiments, respectively. Moreover, the calculated decay pathways of the metastable structures and the comparison of the calculated O ls core-level shifts with XPS data provides a convincing argument in unambiguously identifying the experimental metastable and stable structures, thereby making it possible to build a correct atomic-scale picture of the initial-stage oxidation process on this surface.

• Metals and materials international
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• v.24 no.6
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• pp.1369-1375
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• 2018

In Fe-3%Si steel, the hot rolling process affects not only the hot rolling texture but also the primary recrystallization texture. Here, the effect of asymmetric hot rolling was studied by comparing the difference in the texture evolved between asymmetric and symmetric hot rolling. The effect of asymmetric hot rolling on the texture of primary recrystallized Fe-3%Si steel was also studied. The symmetric hot rolling of Fe-3%Si steel produces a rotated cube texture at the center but Goss and copper textures near the surface. Asymmetric hot rolling tends to produce Goss and copper textures even at the center like the texture near the surface. After primary recrystallization, the dominant texture at the center changes from {001} <210> to {111} <112> and the new texture has a higher fraction of the grains which make the low energy boundary with Goss grains than that of symmetric hot rolling.