• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Applied Chemistry for Engineering
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• v.31 no.1
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• pp.57-60
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• 2020

An acetaldehyde, a representative food waste odor, was decomposed using a hybrid system comprised of a non-thermal plasma and catalyst at an ambient temperature under high humidity. A five wt.% Mn was impregnated on two differently structured microporous zeolites, namely Beta and ZSM-5, with a different molar ratio of SiO₂/Al₂O₃. Under high humidity conditions, the acetaldehyde degradation was higher in zeolites with the high ratio of SiO₂/Al₂O₃. Among studied catalysts, a five wt.% Mn/Beta (SiO₂/Al₂O₃ = 300) showed the highest acetaldehyde removal activity owing to its high hydrophobicity and reducibility. During long term stability test using the same catalyst for 110 hours, the acetaldehyde removal activity was relatively well-maintained.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1021-1026
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• 1997

RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.215-221
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• 1992

This research is aimed at developing(110) preferred TiS2 cathode films and glass typed solid electro-lytes which have high ionic migrations and low electron conductivities for thin secondary solid batteries. To obtain preferred oriented TiS2 thin films on a substrate by CVD method using TiCl4 and H2S gases three factors of heating temperature, inner pressure of furnace and TiCl4/H2S gas mole fraction were ex-amined systematically. To obtain solid films of Li2O-B2O3-SiO2 electrolytes by r.f. sputtering for thin proto-type batteries of Li/Li2O-B2O3-SiO2TiS2, sputtering conditions were examined. TiS2 cathode films showed columnar structure, namely c axis oriented parallely. At low pressure of reaction chamber and low heating temperature, surface of smooth TiS2 films couldd be obtained. Ionic conductivity of Li2O-B2O3-SiO2 films manufactured by r.f. magnetron sputtering were 3$\times$10-7$\Omega$-1cm-1 and electron conductivities were 10-11$\Omega$-1cm-1. Open cell voltage of thin lithium batteries were 2.32V with a designed prototype cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.110-115
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• 2007

A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.

• Journal of the Mineralogical Society of Korea
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• v.30 no.3
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• pp.83-91
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• 2017

In-situ high-pressure and ex-situ high temperature-pressure experiments of natural beryl ($Be_3Al_2Si_6O_{18}$, P6/mcc) from two different localities (beryl-A and beryl-B) were studied using pure water as pressure transmitting medium. Compared to the previous study using a mixture of methanol:ethanol medium in 4 : 1 by volume, pressure- and temperature-induced chemical and structural changes under water medium are expected to be different. The derived bulk moduli are 111(7) GPa, $K{_0}^{\prime}=73(7)$; 110(9) GPa, $K{_0}^{\prime}=65(8)$ for beryl-A and beryl-B, respectively. We observe densifications in volume compression, which appear to be attributed to the phase transitions of water to ICE VI and ICE VII around 1.0 GPa and 2.5 GPa, respectively.

• Journal of the Korean Dietetic Association
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• v.21 no.2
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• pp.110-122
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• 2015

The purpose of this study was to investigate the correlation between food behavior and Attention Deficit Hyperactivity Disorder (ADHD) score in elementary students in Suwon-si, Gyeonggi-do. Two hundreds and thirty two students (113 male and 119 female) in grades 4~6 participated. We assessed food behavior by using Nutrition Quotient (NQ). NQ was examined by an NQ questionnaire, which consisted of 19 food behavior checklist items. Their items were grouped into five categories: balance, diversity, moderation, regularity, and practice. All data were statistically analyzed by SPSS 18.0. Among the five factors, NQ for food behavior and balance factor showed the lowest score, whereas that of diversity factor showed the highest score. The final Nutrition Quotient (NQ) score weighted on such five factors was 62.59 points. The average level of ADHD by Conners-Wells Adolescent Self-Report Scale (Short Form) [CASS(S)] was 17.02 points out of a total of 81 points. Six students (2.2%) who scored more than 41 points were classified as ADHD risk. By gender, male students (19.76 points) showed a higher CASS(S) score than female students (14.41 points) did. There was a significant negative correlation between NQ and CASS(S) score (r=-0.445, P<0.001). Multiple regression determined the effects of moderation ($Exp({\beta})=-0.193$, P<0.01) and practice ($Exp({\beta})=-0.345$, P<0.001) on CASS(S) score. In conclusion, distinctive nutritional education is needed for students with a high level of ADHD to help their understanding considering their different levels of attention.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.413-418
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• 2001

We investigated change of crystal structure, surface morphology and crystal orientation of the electrodeposited film from dispersed $SiO_2$ suspensions (colloidal silica) copper sulfate bath and arse corrosion potentials and physical specific properties. As addition of colloidal silica in copper electrolytic hath, the crystal Particles on filial was fined-down, made uniform and account of particles were increased. Hardness of copper electrodeposited film ascended about 15% and (111), (200) and (311) plane of X-ray diffraction patterns were almost swept away, so preferred orientation chanced from (111) to (110) plane. Also, corrosion potential of electrodeposited copper film was noble with colloidal silica addition.