• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2000.11a
• /
• pp.3-4
• /
• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Journal of the Mineralogical Society of Korea
• /
• v.13 no.1
• /
• pp.1-14
• /
• 2000

알루나이트는 포항지역의 제3기 연일층군의 이암 층내의 탄산염 결핵체 주변에서 할로이사이트와 함께 극미립 변질물 (1-2 $\mu\textrm{m}$)로서 산출된다. 알루나이트는 정육면체와 유사한 능면체 결정형을 이루고 침상 내지 단주상의 할로이사이트와 밀접한 공생관계를 이룬다. X-선회절 분석에 의해서 이 알루나이트는 a=6.9897(1) $\AA$, c=17.2327(4)$\AA$, V=728.75(3) $\AA$3의 격자상수값을 갖는 것으로 밝혀졌다. X-선형광된 이 알루나이트의 화학식은 (K0.94N0.06)(Al2.55Fe3+0.45)(SO4)2(OH)6 으로서, 나트로알루나이트 단성분을 6-7 mole%정도 함유하는 것으로 분석되었다. 또한 시차열분석 (TG-DTG-DTA)을 통해서 알루나이트의 승화성 성분들 (H2O와 SO3)의 존재와 함유 정도를 조사하였고, 고온X-선회절분석을 병행하여 이 광물의 OH기의 이탈 반응 (52$0^{\circ}C$)과 고온상으로의 전이 반응 ($600^{\circ}C$ 및 $700^{\circ}C$)을 감정 하였다. K/Ar 법으로 측정된 알루나이트의 생성 연대 ($0.342\pm$0.008 Ma)와 안정동위원소들의 분석 결과 ($\delta$18Oso4=-1.7, $\delta$DSMOW=-31, $\delta$34S=-10.8)는 이 알루미늄 황산염 광물이 연일충군의 융기 이후에 야기된 민물의 유입에 의한 표성기원의 변질작용의 결과로 생성되었음을 지시한다. 알루나이트+할로이사이트 공생군의 침전은 이암 내에서 조성된 강산성 (pH=2-3)의 알루미늄 황산염 용액이 탄산염 결핵체를 만나 반응하여 pH가 국지적으로 증가되어 (pH=4) 과포화되는 과정에 의해서 야기되었다. 컴퓨터를 이용한 Al3+의 포화지수에 관한 화학적 평형 모델링 실험 결과, 알루미늄 황산염 용액으로부터의 알루나이트와 할로이사이트의 침전은 pH=4 및 \ulcornerSO42-=10-4M 조건에서 K+과 Si(OH)4의 농도가 10-4M 이상 유지되어야 가능한 것으로 밝혀졌다.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.8
• /
• pp.1491-1494
• /
• 2008

A novel platinum aminoalkoxide complex, Pt$(dmamp)_2$ has been prepared by the reaction of cis-$(py)_2PtI_2$ with two equivalents of Na(dmamp) (dmamp = 1-dimethylamino-2-methyl-2-propanolate). Single-crystal X-ray crystallographic analysis shows that the Pt(dmamp)2 complex keeps a square planar geometry with each two nitrogen atoms and two oxygen atoms having trans configuration. Platinum films have been deposited on TaN/ Ta/Si substrates by metal organic chemical vapor deposition (MOCVD) using Pt$(dmamp)_2$. As-deposited platinum thin films did not contain any appreciable amounts of impurities except a little carbon. As the deposition temperature was increased, the films resistivity and deposition rate increased. The electrical resistivity (13.6 $\mu\Omega$cm) of Pt film deposited at 400 ${^{\circ}C}$ is a little higher than the bulk value (10.5 $\mu\Omega$cm) at 293 K. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.1
• /
• pp.66-79
• /
• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.18 no.5
• /
• pp.47-58
• /
• 2017

This study examined the effects of elderly people's frail prevention program performed in a senior center located in J-si. The most interesting were the effects on the subjective health status, depression, physical fitness, and quality of life for the senior center participation of the elderly. The nonequivalent control group pre-post-test design was employed. A total of 43 people living in J-si were assigned to either the experimental group (n=22) or control group (n=21). The experimental group was provided with the 8-weeks frail elderly prevention program from September 1 to October 16 in 2015. The data were analyzed with SPSS/WIN 21.0 using descriptive statistics, $x^2-test$, Fisher's exact test, and t-test. The results indicated a significant difference between the experimental group and control group with respect to the scores of the subjective health status (t=-0.35, p=.024), depression (t=2.76, p=.035), physical fitness, including right grip strength (t=-3.10, p=.004) and flexibility of the waist (t=-2.13, p=.039), and the quality of life (t=4.36, p<.001). In conclusion, an elderly people's frail prevention program has a significant effect on the change in subjective health status, depression physical fitness, quality of life, and self-care behavior for senior center participation.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.3
• /
• pp.77-81
• /
• 2020

Commercialization of flexible OLED displays, such as rollable and foldable displays, has attracted tremendous interest in next-generation display markets. However, during bending deformation, cracking and delamination of thin films in the flexible display panels are the critical bottleneck for the commercialization. Therefore, measuring mechanical properties of the fragile thin films in the flexible display panels is essential to prevent mechanical failures of the devices. In this study, tensile properties of the metal and ceramic nano-thin films were quantitatively measured by using a direct tensile testing method on the water surface. Elastic modulus, tensile strength, and elongation of the sputtered Mo, MoTi thin films, and PECVD deposited SiN_x thin films were successfully measured. As a result, the tensile properties were varied depending on the deposition conditions and the film thickness. The measured tensile property values can be applied to stress analysis modeling for mechanically robust flexible displays.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.380-380
• /
• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Journal of Sensor Science and Technology
• /
• v.5 no.5
• /
• pp.79-84
• /
• 1996

A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

• Transactions of the Korean hydrogen and new energy society
• /
• v.24 no.5
• /
• pp.359-366
• /
• 2013

This work is investigated for the catalytic decomposition of hydrogen iodide (HI). Platinum was used as active material by loading on $ZrO_2-SiO_2$ mixed oxide in HI decomposition reaction. To obtain high and stable conversion of hydrogen iodide in severe condition, it was required to improve catalytic activity. For this reason, a method increasing dispersion of platinum was proposed in this study. In order to get high dispersion of platinum, zirconia was incorporated in silica by sol-gel synthesis. Incorporating zirconia influence increasing platinum dispersion and BET surface area as well as decreasing deactivation of catalysts. It should be able to stably product hydrogen for a long time because of inhibitive deactivation. HI decomposition reaction was carried out under the condition of $450^{\circ}C$ and 1 atm in a fixed bed reactor. Catalysts analysis methods such as $N_2$ adsorption/desorption analysis, X-ray diffraction, X-ray fluorescence, ICP-AES and CO gas chemisorption were used to measurement of their physico-chemical properties.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.809-815
• /
• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.