• 반도체디스플레이기술학회지
• /
• 제13권3호
• /
• pp.27-33
• /
• 2014

To develop high efficiency crystalline solar cells, the $SiN_x$ film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the $SiN_x$ film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the $SiN_x$ film deposition process, $SiH_4$ gas rate and substrate temperature were varied and then refractive index and thickness were measured. When $SiH_4$ gas rate was 22sccm and substrate temperature was $100^{\circ}C$, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at $300{\sim}500^{\circ}C$. When the annealing temperature was $100^{\circ}C$ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at $975^{\circ}C$. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD $SiN_x$ film were measured.

• 대한화학회지
• /
• 제52권6호
• /
• pp.614-621
• /
• 2008

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.45-46
• /
• 2009

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with thin (${\approx}10\;nm$) Inductive-Coupled Plasma (ICP) CVD $Si_xN_y$ dielectric layers and investigated electrical properties of nitrided $SiO_2$/4H-SiC interface after oxidizing the $Si_xN_y$ in dry oxidation and/or $N_2$ annealing. An improvement of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements if compared with non-annealed oxidized-SiN. The improvements of SiC MOS capacitors formed by oxidized-SiN have been explained in this paper.

• 한국진공학회지
• /
• 제8권2호
• /
• pp.148-152
• /
• 1999

the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

• 반도체디스플레이기술학회지
• /
• 제14권3호
• /
• pp.7-11
• /
• 2015

In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

• 한국재료학회지
• /
• 제12권1호
• /
• pp.54-57
• /
• 2002

We have grown undoped $In_ xGa_{1-x}N,\; In_xGa_{1-x}N:Si\;and\;In_{0.1}Ga_{0.9}N:Zn$ thin films by MOCVD at temperature between 880 and $710^{\circ}C which endows various In composition in the epilayer from 0.07 to 0.22 as examined using X-ray diffraction, optical absorption(OA), photocurrent (PC) and photoluminescence (PL). The In molar fraction estimated from PL results is higher than that from the OA, PC, and X-ray data for $X{\le}0.22$, which may be caused by phase separation. However, the In molar fraction estimated by X-ray diffraction, OA, PC and PL for $In_xGa_{1-x}N:Si$ does not show discrepancy. With the appropriate Zn doping in undoped $In_{0.1}Ga_{0.9}N$, the emission peak is shifted from 3.15 eV which originates from the band edge emission peak to 2.65 eV which resulted from the conduction band to acceptor transition due to a deep acceptor level.

• 센서학회지
• /
• 제6권3호
• /
• pp.200-206
• /
• 1997

열산화시킨 실리콘 웨이퍼 위에 저압화학기상성장법으로 $SiCl_{2}H_{2}$, $NH_{3}$ 및 $N_{2}O$ 기체를 사용하여 실리콘 옥시나이트라이드($Si_{x}O_{y}N_{z}$) 층을 제작하였다. 세 가지의 다른 조성이 기체 유속비($NH_{3}/N_{2}O$)를 각기 0.2, 0.5 및 2로 변화시키고 $SiCl_{2}H_{2}$의 기체 유속은 고정시킴으로써 얻어졌다. 엘립소메트리와 HFCV(High Frequency Capacitance-Voltage) 측정법을 채택하여 굴절율, 유전율 및 조성의 차이를 각각 조사했다. 실리콘 옥시나이트라이드는 내부에 포함된 실리콘 나이트라이드 성분량에 관계없이 용액 중에서 순수한 실리콘 나이트라이드와 유사한 안정성을 보유했다. 실리콘 옥시나이트라이드 층 알칼리이온 감지성의 크기 순서는 실리콘 나이트라이드 성분량에 영향을 받았다. 보다 나은 알칼리이온 감지성이 실리콘 옥시나이트라이드의 벌크 내에 있는 실리콘 디옥시드의 성분량을 증가시킴으로써 얻어졌다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2008년도 추계학술대회 초록집
• /
• pp.47-47
• /
• 2008

Cr and AlSi (Si=20 and 66 at.%) target들을 이용하여 Closed-field unbalanced magnetron sputtering (CFUBMS)으로 증착된 주기($\Lambda$)가 2.3 nm에서 8.0nm인 CrN/AlSiN multilayer coatings의 crystal structure, 화학적 조성, 및 기계적 특성을 glow discharge optical emission spectroscopy (GDOES), X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS) and nano-indenter 등의 분석장비를 이용하여 분석하였다. 고온안정성을 시험하기 위하여 $800^{\circ}C$와 $1000^{\circ}C$ 공기중 에서 30분 열처리하였다. CrN/AlSiN multilayer coatings의 고온안정성은 Si조성이 증가함에 따라 향상되었다. Si이 18.2 at.%함유된 coating이 가장 우수한 고온안정성을 갖고 있다.

• 한국결정성장학회지
• /
• 제9권1호
• /
• pp.39-42
• /
• 1999

N-도핑된 3C-SiC (N-SiC(3C))을 화학기상증착(CVD)으로 $1250^{\circ}C$에서 Si(111) 기판 위에 tetramethylsilane(TMS)를 열분해하여 성장하였다. 수송가스는 $H_{2}$이었고, N-SiC(3C) 에피층은 CVD로 성장되는 동안 $NH_{3}$에 의하여 n-형으로 도핑되었다. N-SiC(3C)의 물리적 특성은 적외선 분광(FTIR), X-선 회절(XRD), 라만 스펙트럼(Raman spectrum), 단면 투과전자영상(XTEM), Hall 측정 및 p/n 다이오드의 전압-진압(I-V) 특성에 의하여 조사되었다. N-도핑된 SiC(3C) 에피층의 전도형은 n-형이었고, 전도형은 $NH_{3}$를 사용한 N-dopant에 의하여 저온에서 잘 조절될 수 있다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1996년도 재료학회 춘계학술발표회
• /
• pp.23-23
• /
• 1996