• Title/Summary/Keyword: Shunt resonator

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A Tuable Dual-Band Bandpass Filter Design Using Variable Characteristic Transmission Lines (가변 특성 임피던스 전송 선로를 이용한 가변 이중 대역 대역 통과 여파기)

  • Chaudhary, Girdhari;Jeong, Yong-Chae;Lim, Jong-Sik;Kim, Dong-Su;Kim, Jun-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.9
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    • pp.852-857
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    • 2011
  • In this paper, the application of a variable characteristic impedance transmission line that can be used to design a dual-band bandpass filter(BPF) is presented. The proposed filter offers a fixed first frequency passband and a controllable second passband. The tuning of the second passband is achieved by varying the characteristic impedance of and open shunt stub line in a stub loaded resonator(SLR) with the help of a defected ground structure(DGS) transmission line and varactor diodes. In order to validate the proposed structure, a two stage dual-band BPF with three transmission zeros was implemeted and experimentally verified based on its theoretical predictions and simulations.

Effect of Center Frequency Deviation in Miniaturized CMOS Bandpass Filter

  • Kang, In-Ho;Li, Shang-Ming;Guan, Xin
    • Journal of Navigation and Port Research
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    • v.35 no.4
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    • pp.299-302
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    • 2011
  • In this letter, the effect of quality factor on center frequency deviation in miniaturized coupled line bandpass filter (BPF) with diagonally end-shorted at their opposite sides and lumped capacitors is theoretically analyzed. The miniaturized BPF of a two-stage structure with two types of quality factors in standard CMOS process was designed and manufactured at 5.5 GHz. The die area of BPF was $1.44{\times}0.41\;mm^2$. The measured center frequency of BPF with a quality factor of 4.9 was deviated from 5.5 GHz to 4.7 GHz. The one with 14.8 was shifted to 5GHz. The theoretical and measured results validate that quality factor influences the center frequency shift of BPF.

Wideband Colpitts Voltage Controlled Oscillator with Nanosecond Startup Time and 28 % Tuning Bandwidth for Bubble-Type Motion Detector (나노초의 발진 기동 시간과 28 %의 튜닝 대역폭을 가지는 버블형 동작감지기용 광대역 콜피츠 전압제어발진기)

  • Shin, Im-Hyu;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.11
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    • pp.1104-1112
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    • 2013
  • This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1~7.5 dBm and the startup time of less than 2 nsec.

A Study on the Out-of-Band Rejection Improvement of TFBAR Ladder Filter using On-Wafer Inductors (기판상의 인덕터를 이용한 박막 공진 여파기의 대역 외 저지특성 개선 연구)

  • 김종수;구명권;육종관
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.3
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    • pp.284-290
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    • 2004
  • In this paper, two types of thin nim bulk acoustic resonator(TFBAR) ladder filters are desisted and fabricated to analyze the effects of on-wafer inductor integration. To suppress the overmode phenomenon a 1 $\mu\textrm{m}$ thick air-gap is fabricated under the TFBAR and aluminum nitride is used for piezoelectric material, while platinum is employed for the top and bottom electrodes. The Tx filter in a duplexer, which usually has a steeper skirt characteristics o the right side of the passband, is designed with four serial and two shunt resonators, namely, a 4/2 stage. Similarly, the Rx filter is devised with a 3/4 stage to create a mirrored image of the Tx filter passband characteristics. Fabricated on-wafer spiral inductors with underpass reveals the Q factor of 5~9 at 2 ㎓. Inductor integrated filters have approximately 10 to 12 ㏈ out-of-band rejection improvement, when compared to the original filters.