• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1235-1242
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• 2008

In this paper, x-ray image sensor of photon counting type having a $32{\times}32$ pixel array is designed with $0.18{\mu}m$ triple-well CMOS process. Each pixel of the designed image sensor has an area of loot $100{\times}100\;{\mu}m2$ and is composed of about 400 transistors. It has an open pad of an area of $50{\times}50{\mu}m2$ of CSA(charge Sensitive Amplifier) with x-ray detector through a bump bonding. To reduce layout size, self-biased folded cascode CMOS OP amp is used instead of folded cascode OP amp with voltage bias circuit at each single-pixel CSA, and 15-bit LFSR(Linear Feedback Shift Register) counter clock generator is proposed to remove short pulse which occurs from the clock before and after it enters the counting mode. And it is designed that sensor data can be read out of the sensor column by column using a column address decoder to reduce the maximum current of the CMOS x-ray image sensor in the readout mode.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.43-49
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• 2015

By the trends of electronic package to be smaller, thinner and more integrative, organic printed circuit board is required to be finer Cu trace pitch. This paper reports on a study of failure mechanism for PCB with fine Cu trace pitch using biased HAST. In weibull analysis of the biased HAST lifetime, it is found that the acceleration factor (AF) of between $135^{\circ}C/90%RH/3.3V$ and $130^{\circ}C/85%RH/3.3V$ is 2.079. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $Cu_xO/Cu(OH)_2$ colloids and Cu dendrites were formed at anode (+) and at cathode (-), respectively. Thus, this gives the evidence that Cu dendrites formed at cathode by $Cu^{2+}$ ion migration lead to a short failure between a pair of Cu nets.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.111-118
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• 2008

In this paper, novel latch-up prevention method that employs power-up sequential switches has been proposed to relieve latch-up problem in liquid crystal display (LCD) driver ICs. These sequential switches are inserted in the 2'nd and 3'rd boosting stages, and are used to short the emitter-base terminals of parasitic p-n-p-n circuit before relevant boosting stages are activated during power-up sequence. To verily the performance of the proposed method, test chips were designed and fabricated in a 0.13-um CMOS process technology. The measurement results indicated that, while the conventional LCD driver If entered latch-up mode at $50^{\circ}C$ accompanying a significant amount of excess current, the driver IC adopting the proposed method showed no latch-up phenomenon up to $100^{\circ}C$ and maintained normal current level of 0.9mA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.6
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• pp.586-594
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• 2013

This paper proposes a new coupling element of microwave slot coupler for designing waveguide slot array which can reduce the effect of undesired higher order mode coupling between coupling and radiating slots in the branch waveguide. The proposed device is composed of a centered longitudinal shunt-series coupling slot at the center of broad wall shared by two crossed rectangular waveguides and an asymmetric compound iris that excites the coupling slot. We first have obtained scattering parameters for the proposed coupler by use of EM S/W tool HFSS and then extracted the parameters of T- network equivalent circuit for the coupling slot. We also have analyzed the resonant properties such as resonant length and normalized admittance by changing the geometrical dimensions. The measured results for the fabricated coupler with short-circuited block ${\lambda}_g/4$ away from the coupling slot are well agreed with the simulated ones.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.50 no.12
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• pp.624-630
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• 2001

The trend of the regulations on environmental issues are getting tight. Responding to this trend new technologies such as moving electrodes, wide pitch and pulsed power supply are also introduced in the electrostatic precipitator(EP) systems. The introduction of wide pitch and moving electrodes enhances the system performance of the EPs by improving air-flow and by improving the ash reentrainment on rapping. The power supplies for the EPs developed up to date include thyristor-based dc or intermittent type, SMPS(switching mode power supply) type and the pulsed-power supply type. The use of the pulsed ones is known to improve dust-collecting efficiency of high resistivity ash and reduces back corona occurrence in the collecting plate. There are two kinds of pulsed-power supplies; one with pulsed transformers and the other with direct dc switching devices. The latter uses rotary spark gap switches or semiconductor switches. Both have the merits and demerits: the spark gap switches are simple and robust but has short life time, hence, high maintenance cost, whereas the semiconductor switches have long life time but are costly. In this study, A high voltage power supply with superimposing voltage pulse on dc source was developed for EPs. This study describes circuit topology, operating principle of the scheme, and analysis of experimental results on Dong-Hae Power Plant. The pulsed power supply consists of a variable dc power supply with ratings of 60kV, 800mA and pulse generator which is made of high voltage thyristor-diode switch strings, an LC resonant tank and a blocking inductor. The pulse generator generates variable pulse-voltage up to 70kV using a high frequency resonant inverter with a variable dc source. Two prototypes were built and tested on 250MW DongHae power plant to verify the possibility of the commercial use and the normal operation in the transient states.

• The Korean Journal of Physiology
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• v.13 no.1_2
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• pp.13-22
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• 1979

Studies have been conducted using isolated surviving skin of Rana temporalia in an attempt to evaluate the effect of N-ethylmaleimide (NEM) on the epithelial $Na^+$ transport. Active transport of $Na^+$ across the skin was estimated by measuring short circuit current (SCC). NEM administered to the outside surface of the skin in concentration of $0.5{\times}10^{-4}-2.5{\times}10^{-4}M$ induced $20{\sim}40%$ increase during the first 30 mintues, followed by a gradual reduction in SCC. With NEM above $4{\times}10^{-4}M$, SCC was inhibited from the beginning. Qualitatively similar results were obtained when NEM was added to the inside bathing medium. However, the concentration of NEM for a similar effect was much higher with the drug in the inside bathing medium than in the outside bathing medium. The oxygen consumption of the skin was inhibited by NEM of above $10^{-4}M$, the effect being of approximately the same magnitude as that on SCC. The activity of $Na^+-K^+$ ATPase of the skin was not inhibited by NEM below $10^{-3}M$, but it was dramatically reduced with $1.2{\times}M$ NEM. The effects of NEM $(10^{-4}M)$ on the SCC and oxygen consumption could be eliminated by adding cysteine $(10^{-4}-10^{-3}M)$ in the medium, indicating that the SH group is involved in the action of NEM in the frog skin. On the basis of these results, the mode of action of NEM on the $Na^+$ transport across the frog skin was discussed.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.44-48
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• 2014

A liquid nitrogen-cooled prepolarization ($B_p$) coil made for ultra-low field nuclear magnetic resonance and magnetic resonance imaging (ULF-MR) designed to generate 7 mT/A was fabricated. However, with suspected internal insulation failure, the coil was investigated in order to find out the source of the failure. This paper reports detailed build of the failed $B_p$ coil and a number of analysis methods utilized to figure out the source and the mode of failure. The analysis revealed that pyrolytic graphite sheet linings put on either sides of the coil for better thermal conduction acted as an electrical bridge between inner and outer layers of the coil to short out the coil whenever a moderately high voltage was applied across the coil. A simple model circuit simulation corroborated the analysis and further revealed that the failed insulation acted effectively as a damping resistor of $R_{d,eff}=6{\Omega}$ across the coil. This damping resistance produced a 50 ms-long voltage tail after the coil current was ramped down, making the coil not suitable for use in ULF-MR, which requires complete removal of magnetic field from $B_p$ coil within milliseconds.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.6
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• pp.558-569
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• 2017

In this paper, a 256Kb EEPROM IP aimed at battery applications using a single supply of 1.5V which is embedded into an MCU is designed. In the conventional cross-coupled VPP (boosted voltage) charge pump using a body-potential biasing circuit, cross-coupled PMOS devices of 5V in it can be broken by the junction or gate oxide breakdown due to a high voltage of 8.53V applied to them in exiting the program or erase mode. Since each pumping node is precharged to the input voltage of the pumping stage at the same time that the output node is precharged to VDD in the cross-coupled charge pump, a high voltage of above 5.5V is prevented from being applied to them and thus the breakdown does not occur. Also, all erase, even program, odd program, and all program modes are supported to reduce the times of erasing and programming 256 kilo bits of cells. Furthermore, disturbance test time is also reduced since disturbance is applied to all the 256 kilo bits of EEPROM cells at once in the cell disturb test modes to reduce the cell disturbance testing time. Lastly, a CG driver with a short disable time to meet the cycle time of 40ns in the erase-verify-read mode is newly proposed.