• Korean Journal of Materials Research
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• v.13 no.1
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• pp.11-17
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• 2003

DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.

• Journal of Power Electronics
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• v.8 no.3
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• pp.217-227
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• 2008

The electric power subsystems (EPS) of most remote sensing satellites consist of a solar array as a source of energy, a storage battery, a power management and control (PMC) unit and a charge equalization unit (CEU) for the storage battery. The PMC and CEU use high frequency transformers in their power modules. This paper presents a design, implementation and testing results of a high frequency transformer for the EPS of satellite applications. Two approaches are used in the design process of the transformer based on the pre-determined transformer specifications. The transformer is designed based on an ETD 29 ferrite core. The implemented transformer consists of one center-tapped primary coil with eleven center-tapped secondary coils. The offline calculation results and measured values of R, L for transformer coils are convergence. A test circuit for measuring the transformer parameters like voltage, current and B-H hysteresis was implemented and applied. The test results confirm that the voltage waveforms of both primary and secondary coils were as desired. No overlapping occurred between the control signal and the transformer, which was not saturated during testing even during a short circuit test of the secondary channels. The dynamic B-H loop characteristics of the used transformer cores were measured. The sample test results are given in this paper.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.451-465
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• 2008

The DC over current relay(76i) and the DC under voltage relay(mid-point relay, 80A) used mainly with DC protective relay system of DC electric railway in Korea, But the DC fault selective relay(50F) is applying to recently mainly. In this study, simulation to compare 76i/80A and 50F in the methods of protection and the operational characteristics were executed through verifying a calculation of short circuit current and using PSCAD/EMTDC transition program. As a result of this study, it was proved that while 80A runs in relation to the scale of fault resistance, 50F runs regardless of the scale of fault resistance or the length of rail.

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.31-35
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• 2011

A Hybrid Fault Current Limiter(FCL) which has more advantages in fast response and thermal characteristics than a simple resistive FCL had been proposed by our group. The Hybrid FCL consists of a resistive FCL for the magnitude of the first peak of fault current, and a fast switch for detecting fault current and generating the repulsive force within a cycle in fault situation. In ideal case, the impedance of the fast switch wound with two other kinds of HTS tape is negligibly zero in normal operation. But, during the fault situation, each HTS tape has different quench characteristics because of asymmetric current distribution. And this phenomenon causes effective flux and this flux opens the switch through the repulsive force applied to a metal plate of the fast switch. The magnitude of the repulsive force affects the switching characteristics of the fast switch. It should be large enough to raise the metal plate up. Otherwise the arc re-out break which are caused by not enough repulsive force to raise the metal plate up can cause unintended operation of the fast switch. In this paper, the numerical calculation of the repulsive force applied to the metal plate of the fast switch in various combinations of HTS tapes was performed by using the short-circuit test and finite element method.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.6
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• pp.562-567
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• 2020

In this paper, this is a study on the correction of protection relays to monitor temporary power facilities for storage tanks especially transformers to block and protect faults such as insulation breakdown. When an abnormality such as a short circuit or a ground fault occurs in the power system, it is important to detect this quickly cut off the device and equipment in which the fault occurred and separate it from the power system to correct the protection relay so that it does not interfere with power supply. In addition the fault current calculation that accurately applies the fault type and the cause of the fault for protection cooperation will be the most important factor in the correction of the protection relay. For protection coordination a study was conducted on the method of coordination for protection of power facility protection for storage tanks such as over current relay, ground over current relay, under voltage relay, and ground over voltage relay applied to temporary.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.