• 제목/요약/키워드: Short turn

검색결과 255건 처리시간 0.025초

다수 대함유도탄에 대한 함정의 대공방어유도탄 운용기법 연구 (Defense Strategy against Multiple Anti-Ship Missiles using Anti-Air Missiles)

  • 김도완;윤중섭;유창경
    • 한국항공우주학회지
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    • 제39권4호
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    • pp.354-361
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    • 2011
  • 본 연구에서는 단일 함정에 대해 근접방어용 대공방어유도탄을 이용한 대함유도탄 방어 기법 로직을 제안한다. 방어함정은 레이더 정보를 이용해 대함유도탄 궤적을 예측하고, 예측된 궤적을 바탕으로 방어 기법 로직에 의해 교전 계획을 수립한다. 방어 기법 로직은 최대한 많은 수의 대함유도탄을 함정으로부터 최대한 먼 곳에서 요격하는 로직으로 이전 발사가 요격에 실패했을 경우에 대비하기 위함이다. 방어유도탄의 할당에 관한 결정은 통합 격추 확률과 예상 요격 지점 비교를 통해 이루어진다. 제안한 로직의 성능은 비선형 2차원 평면 시뮬레이션을 통해 검증하였다.

3[kW]급 연료전지용 전력변환장치(I)의 개발 (Development of 3.0[kW] class Fuel Cell Power Conversion System(I))

  • 문상필;권순걸;서기영;김영문;류재엽
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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    • pp.1207-1208
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    • 2006
  • Recently, a fuel cell with low voltage and high current output characteristics is remarkable for new generation system. It needs both a DC-DC step-up converter and DC-AC inverter to be used in fuel cell generation system. Therefor, this paper, consists of an isolated DC-DC converter to boost the fuel cell voltage 380[VDC] and a PWM inverter with LC filter to convent the DC voltage to single-phase 220[VAC]. Expressly, a tapped inductor filter with freewheeling diode is newly implemented in the output filter of the proposed high frequency isolated ZVZCS PWM DC-DC converter to suppress circulating current under the wide output voltage regulation range, thus to eliminate the switching and transformer turn-on/off over-short voltage or transient phenomena. Besides the efficiency of 93-97[%] is obtained over the wide output voltage regulation ranges and load variations.

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전력용 사이리스터 MCT를 이용한 무접점 직류차단기 (Contactless DC Circuit Breakers Using MOS-controlled Thyristors)

  • 심동연;김천덕;노의철;김인동;김영학;장윤석
    • 동력기계공학회지
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    • 제4권1호
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    • pp.45-50
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    • 2000
  • Circuit breakers have traditionally employed mechanical methods to interrupt excessive currents. According to power semiconductor technology advances in power electronic device, some mechanical breakers are replaced with solid state equivalents. Advantages of the contactors using semiconductor devices include faster fault interrupting, fault current limiting, no arc to contain or extinguish and intelligent power control, and high reliability. This paper describes the design of a static $100{\pm}10%V$ and 0 to 50A DC self-protected contactor with 85A "magnetic tripping" and 100A interruption current at $2.2A/{\mu}s$ short circuit of load condition using a new power device the HARRIS MCT (600V-75A). The self-protection circuit of this system is designed by the classical ZnO varistor for energy absorption and turn-off snubber circuit ("C" or "RCD") of the MCT.

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정부가족계획사업의 현황과 대책 -제 5 차 5 개년계획을 중심으로-

  • 조남동;장영식
    • 한국인구학
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    • 제6권1호
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    • pp.70-89
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    • 1983
  • China's population and family planning program has heen successful. Women's fertility as measured by total fertility rate (TFR) has declined from 5.8 in 1970 to 2.3 in 1990, accordingly the annual crude birth rate(CBR) has declined from 34 per thousand in 1970 to 21 per thousand in 1989, and the annual natural growth rate from 2.6 percent in 1970 to 1.4 percent in 1989 (Coale and Chen, 1987; SSB, 1991; Gu, 1994). While this is indeed an astonishing achievement for a developing country to have its fertility down to replacement within a short period, some new issues emerging along with the rapid fertility decline require careful considerations. One of them is the uprising of the sex ratio at birth in China. The 1990 population census reported the sex ratio at birth in China of 113.8 in 1989, which is ohviously much higher than the acceptable level of normal ratio around 106. It has received since then a lot of tention in China and abroad, among demographic professionals and governmental agencies alike (Hull, 1990; Johansson and Nygren, 1991; Xuand Guo, 1991; Tu, 1993; Gu and Xu, 1994; among others). Based on the available demographic data and research results this paper will first have a review of the patterns and trends of sex ratio at birth in China, then turn to the immediate causes of abnormal sex ratio at birth and the determinants of the son preference, followed with a conceptual framework for understanding of the phenomenon, and finally the policy implications and recommendations will be discussed.

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Factors Associated with Health-Related Quality of Life in Tuberculosis Patients Referred to the National Research Institute of Tuberculosis and Lung Disease in Tehran

  • Kakhki, Ali Darvishpoor;Masjedi, Mohammad Reza
    • Tuberculosis and Respiratory Diseases
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    • 제78권4호
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    • pp.309-314
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    • 2015
  • Background: In tuberculosis (TB) patients, health-related quality of life (HRQoL) is significant in self-management, which in turn can be effective in therapeutic acceptance and prevention of treatment failure due to multi-drug resistant TB. This study was conducted to evaluate HRQoL and associated factors in TB patients referred to the National Research Institute of Tuberculosis and Lung Disease (NRITLD). Methods: In this study, patients were selected from TB clinics of the NRITLD in Tehran. In addition to an Iranian version of the Short-Form Health Survey (SF-36), demographic and disease characteristic questionnaires were used for data collection. The data were then analyzed using SPSS software. Results: Two hundred five TB patients, with the average age of $42.33{\pm}17.64$ years, participated in this study. The HRQoL scores in different domains ranged from $14.68{\pm}11.60$ for role limitations due to emotional problems to $46.99{\pm}13.25$ for general health perceptions. The variables of sex, marital status, education, job status, place of residence, and cigarette smoking, influenced the HRQoL scores in different dimensions. Conclusion: According to the study findings are the important variables that influenced the HRQoL of TB patients. The consideration of its can improve the HRQoL of TB patients.

LCCC 공진회로와 ZVS 기능을 동시에 갖는 전류형 Push Pull DC-DC 컨버터의 특성해석 (A Characteristic Analysis of Current-Fed Push Pull type DC-DC converter using LCCC Resonant circuit and ZVS function)

  • 안항목;황계호;이달해;남승식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 B
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    • pp.1324-1326
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    • 2000
  • This paper proposes a Current-Fed Push Pull type DC-DC converter using LCCC Resonant circuit and Zero Voltage Switching function to reduce turn on and off loss at the switching instants. This paper have the advantage which is able to operating safely in load short, because of DC reactor is connected with resonance reactor in order to supply a fixed current with low ripple from DC Power supply. The capacitor ($C_1$, $C_2$) connected in switch are common using as resonance capacitor and ZVS capacitor. The analysis of the proposed Current-Fed Push Pull type DC-DC converter is generally described by using normalized parameter, and we have evaluated characteristic values which is needed to design a circuit. We confirm a rightfulness theoretical analysis by comparing a theoretical values and experimental values obtained from experiment using MOSFET as switching devices.

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전기 자극 청신경 복합활동전위: 변인 영향 (Electrical Compound Action Potential: Effects of different parameters)

  • 허승덕
    • 재활복지공학회논문지
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    • 제8권1호
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    • pp.9-17
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    • 2014
  • 전기 자극 청신경 복합활동전위(electrical compound action potential; ECAP)는 인공와우로 청신경을 자극하고 동시에 반응을 기록한다. 이 연구는 인공와우에서 ECAP의 효용성을 높이기 위하여 자극과 기록에 대하여 연구하고자 한다. 대상은 문헌 또는 사례 연구를 제외한 연구 논문 34 편으로 하였다. 연구는 펄스 및 자극 조건, 잡파 억제 및 기록 조건 등을 분석하였다. 효과적인 신경 발화, 안정적인 역치 확인, 신경 퇴행 방지 등을 위해서는 펄스폭과 위상 간격이 가급적 짧고, (-)위상이 앞선 양위상 펄스를 사용하였다. 자극은 펄스 간격, 자극비율, 자극 방식 등을 정하여 와우의 첨부, 중간, 기저회전으로 C-level 정도로 하였다. 잡파는 전방차폐법, 거푸집소거법으로 제거하였고, 분명한 파형을 획득하기 위해서는 전극 간격, 증폭 정도, 평균 가산 회수 등의 추가 조절이 필요하다.

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사고전류 변화에 따른 일체화된 삼상자속구속형 고온초전도 사고전류제한기의 사고전류 제한 특성 분석 (Analysis of Fault Current Limiting Characteristics According to Variation of Fault Current level in Integrated Three-Phase Flux-Lock Type Superconducting Fault Current Limiting)

  • 한병성;박충렬;두호익;최효상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.39-40
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    • 2007
  • The analysis of fault current limiting characteristics according to variation of fault current level in the integrated three-phase flux-lock type superconducting fault current limiter (SFCL), which consisted of three-phase flux-lock reactor wound on an iron core with the same turn's ratio between coil 1 and coil 2 for each single phase, was performed. To analyze the current limiting characteristics of this integrated three-phase flux-lock type SFCL, the short circuit experiments was carried out the various three-phase faults such as the single line-to-ground fault, the double line-to-ground fault, the triple line-to-ground fault. From the experimental results, the fault current limiting characteristic was improved according to increase of fault current level.

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Investigation of phenol phormaldehyde-based photoresist at an initial stage of destruction in $O_2$ and $N_2O$ radiofrequency discharges

  • Shutov, D.A.;Kang, Seung-Youl;Baek, Kyu-Ha;Suh, Kyung-Soo;Min, Nam-Ki;Kwon, Kwang-Ho
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.214-215
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    • 2007
  • Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.

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양성자 조사법에 의한 고속스위칭 사이리스터의 제조 (Fabrication of a Fast Switching Thyristor by Proton Irradiation)

  • 김은동;장창리;김상철;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.271-275
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    • 2004
  • A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.

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