• 유기물자원화
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• 제28권1호
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• pp.53-64
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• 2020

다단수직형 적층 방식의 질산화조가 포함된 2㎥/d 병합폐수처리 파일럿플랜트를 설치하여, pH8 이상, DO 1mg/L, 내부반송율 4Q이상의 단축질소제거공정의 질산화조 운전 조건으로 약 1년 이상 운영하였다. 음폐수와 침출수의 경제적인 병합 처리를 위하여, 유분이 최소화된 음폐수를 전체 처리량의 5~25%로 조절하여 최적의 병합 비율을 검토하였다. 음폐수의 고형물과 유분을 효과적으로 분리하기 위하여 도입된 3상원심분리기의 주요 처리 효율은 SS는 116,000mg/L에서 55,700mg/L로 약 52% 제거 되었으며, 노르말헥산(N-H)의 농도는 53,200mg/L에서 27,800mg/L로 약 48%로 제거되었다. 운전 기간 중 병합 폐수처리 공정의 BOD 평균 제거 효율은 99.3%, CODcr 94.2%, CODmn 90%, SS 70.1%, T-N 85.8%, T-P 99.2%로 분석되었다. 처리수의 BOD, CODcr, T-N, T-P 평균 농도는 침출수 배출허용 기준("나"지역)을 만족하였으며, SS는 멤브레인조를 적용한 후 만족하였다. 현장의 침출수는 유량조정조의 간헐적 폭기 및 월별 상이한 방출량의 영향으로 병합폐수 중 아질산성 질소의 성분이 비교적 높았다. 아질산성질소가 축적된 상태에서도 완전질산화 후 탈질보다는, 아질산성 질소에서 탈질되는 결과가 나타났다. 또한 운전기간 중 평균 소포제 투입량은 약 2L/d으로 같은 폐수를 처리할 시 필요한 메탄올 투입량 약 2.8L/d 대비하여 경제적인 것으로 보인다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.689-693
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• 2009

We investigate the comparison of fault current characteristics between the separates three-phase flux-lock type superconducting fault current limiter(SFCL) and integrated three-phase flux-lock type superconducting fault current limiter(SFCL). The single-phase flux-lock type SFCL consists of two coils. The primary coil is wound in parallel to the secondary coil on an iron core and superconducting elements are connected to secondary coil in series. Superconducting elements are used by the YBCO coated conductor. The separated three-phase flux-lock type SFCL consists of single-phase flux-phase type SFCL in each phase. But the integrated three-phase flux-lock type SFCL consists of three-phase flux-reactors wound on an iron core. Flux-reactor consists of the same turn's ratio between coil 1 and coil 2 for each single phase. To compare the current limiting characteristics of the separated three-phase flux-lock type SFCL and integrated three-phase flux-lock type SFCL, the short circuit experiments are carried out fault condition such as the single line-to-ground fault. The experimental result shows that fault current limiting characteristic of the separated three-phase flux-lock type SFCL was better than integrated three-phase flux-lock type SFCL. And the integrated three-phase flux-lock type SFCL has an effect on sound phase.

• Journal of Welding and Joining
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• 제17권1호
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• pp.124-132
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• 1999

Thermal fatigue strength of the solder joints is the most critical issue for TSOP(Thin Small Outline Package) because the leads of this package are extremely short and thermal deformation cannot be absorbed by the deflection of the lead. And the TSOP body can be subject to early fatigue failures in thermal cycle environments. This paper was discussed distribution of thermal stresses at near the joint between silicon chip and die pad and investigated their reliability of solder joints of TSOP with 42 alloy clad lead frame on printed circuit board through FEM and 3 different thermal cycling tests. It has been found that the stress concentration around the encapsulated edge structure for internal crack between the silicon chip and Cu alloy die pad. And using 42 alloy clad, The reliability of TSOP body was improved. In case of using 42 alloy clad die pad(t=0.03mm). $$\sigma$_{VMmax}$ is 69Mpa. It is showed that 15% improvement of the strength in the TSOP body in comparison with using Cu alloy die pad $($\sigma$_{VMmax}$=81MPa). In solder joint of TSOP, the maximum equivalent plastic strain and Von Mises stress concentrate on the heel of solder fillet and crack was initiated in it's region and propagated through the interface between lead and solder. Finally, the modified Manson-Coffin equation and relationship of the ratio of $N_{f}$ to nest(η) and cumulative fracture probability(f) with respect to the deviations of the 50% fracture probability life $(N_{f 50%})$ were achieved.

• Current Photovoltaic Research
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• 제3권1호
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.39-46
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• 2013

본 논문은 캐리어의 이동도 및 전도도를 개선하고, 흡수된 빛의 이동 경로를 증가시켜 광흡수도를 높이기 위하여 정공 수송층 재료에 금 나노입자를 첨가하여 유기태양전지를 제작하였다. 광활성층으로는 P3HT와 PCBM의 bulk-heterojunction 구조를 사용하였다. 유기태양전지에서 금 나노입자를 첨가한 정공 수송층의 효과를 관찰하기 위하여 금 나노입자의 첨가량(0, 0.5, 1.0 wt% Au)과 열처리온도(상온, $110^{\circ}C$, $130^{\circ}C$, $150^{\circ}C$)에 따른 광학적 전기적 특성을 조사하였다. 최대전력변환효율을 갖는 유기태양전지는 0.5 wt% 금 나노입자 첨가한 소자와 $130^{\circ}C$에서 열처리한 소자에서 관찰되었다. 이때 유기태양전지의 전기적 특성은 금 나노입자를 0.5 wt% 첨가한 경우, 단락전류밀도, 곡선인자 및 전력변환효율은 각각 10.2 $mA/cm^2$, 55.8% 및 3.1%로 나타났으며, $130^{\circ}C$에서 열처리한 경우, 12.0 $mA/cm^2$의 단락전류밀도와 64.2%의 곡선인자를 가지며, 4.0%의 전력변환효율이 관찰되었다.

• 마이크로전자및패키징학회지
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• 제17권2호
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• pp.63-67
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• 2010

본 연구에서는 P3HT와 PCBM 물질을 전자도너와 억셉터 광활성층 물질로 사용하여 벌크이종접합 구조를 갖는 Glass/ITO/PEDOT:PSS/P3HT-PCBM/Al 구조의 유기박막태양전지를 제작하였다. P3HT와 PCBM은 각각 0.5 wt%의 농도로 톨루엔 용액에 용해하였다. 광활성층 농도를 최적화하기 위하여 P3HT:PCBM= 3:4, 4:4, 4:3 wt%의 농도비로 소자를 제작하고, 농도비에 따른 전기적 특성을 조사하였다. 또한 활성층의 후속열처리 온도가 소자의 전기적 특성에 미치는 영향을 조사하였다. P3HT와 PCBM의 농도비가 4:4 wt%의 비율에서 가장 우수한 전기적 특성을 나타내었으며, 이때 단락전류밀도 ($J_{SC}$), 개방전압 ($V_{OC}$), 및 충실인자 (FF)는 4.7 $mA/cm^2$, 0.48 V 및 43.1%를 각각 나타내었다. 또한 전력변환효율(PCE)은 0.97%의 값을 얻었다. 최적화된 농도비를 갖는 태양전지 소자에 대해 $150^{\circ}C$에서 5분, 10분, 15분, 20분간 후속 열처리를 실시한 결과 P3HT 전자도너의 흡광계수가 증가하는 경향을 보였다. 후속 열처리 조건이 $150^{\circ}C$에서 15분인 경우 전기적 특성이 열처리 하지 않은 소자에 비해 특성이 개선되었다. 즉, 이때의 전기적 특성은 $J_{SC},\;V_{OC}$, FF, PCE의 값이 각각 7.8 $mA/cm^2$, 0.55 V, 47%, 2.0%를 나타내었다.

• 공업화학
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• 제24권4호
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• pp.396-401
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• 2013

Benzo[1,2,5]thiadiazole, carbazole 및 phenanthrene을 기본 골격으로 한 교대공중합체인 poly[9-(2-octyl-dodecyl)-9H-carbazole-alt-4,7-di-thiophen-2-yl-benzo[1,2,5]thiadiazole] (PCD20TBT)와 poly[9,10-bis-(2-octyl-dodecyloxy)-phenanthrene-alt-4,7-di-thiophen-2-yl-benzo[1,2,5]thiadiazole] (PN40TBT)을 Suzuki coupling reaction을 이용하여 중합하였다. 합성한 고분자들은 chloroform, chlorobenzene, 1,2-dichlorobenzene, tetrahydrofuran, toluene과 같은 유기용매에 대한 용해도가 우수하였다. PCD20TBT의 최대흡수 파장과 밴드갭은 각각 535 nm와 1.75 eV이고, PN40TBT의 최대흡수 파장과 밴드갭은 각각 560 nm과 1.97 eV이었다. PCD20TBT의 HOMO 및 LUMO 에너지준위는 각각 - 5.11 eV와 - 3.36 eV이고, PN40TBT의 HOMO 및 LUMO 에너지준위는 각각 -5.31 eV와 -3.34 eV이었다. 합성한 고분자와 (6)-1-(3-(methoxycarbonyl)-{5}-1-phenyl[5,6]-fullerene(PCBM)을 1:2의 중량비로 블랜딩하여 제작한 이종접합형태(bulk heterojunction) 태양전지를 제작하였다. PCD20TBT의 광전변환효율은 0.52%, PN40TBT의 광전변환효율은 0.60%이었다. 그리고 소자의 단락 전류밀도, 충진 인자와 개방전압은 PCD20TBT가 각각 $-1.97mA/cm^2$, 38.2%, 0.69 V이며, PN40TBT의 경우 각각 $-1.77mA/cm^2$, 42.9%, 0.79 V이었다.

• 한국분말재료학회지
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• 제31권1호
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• pp.16-22
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• 2024

Composite-based piezoelectric devices are extensively studied to develop sustainable power supply and self-powered devices owing to their excellent mechanical durability and output performance. In this study, we design a lead-free piezoelectric nanocomposite utilizing (Ba_0.85 Ca_0.15)(Ti_0.9Zr_0.1)O₃ (BCTZ) nanomaterials for realizing highly flexible energy harvesters. To improve the output performance of the devices, we incorporate porous BCTZ nanowires (NWs) into the nanoparticle (NP)-based piezoelectric nanocomposite. BCTZ NPs and NWs are synthesized through the solid-state reaction and sol-gel-based electrospinning, respectively; subsequently, they are dispersed inside a polyimide matrix. The output performance of the energy harvesters is measured using an optimized measurement system during repetitive mechanical deformation by varying the composition of the NPs and NWs. A nanocomposite-based energy harvester with 4:1 weight ratio generates the maximum open-circuit voltage and short-circuit current of 0.83 V and 0.28 ㎂, respectively. In this study, self-powered devices are constructed with enhanced output performance by using piezoelectric energy harvesting for application in flexible and wearable devices.

• 한국산학기술학회논문지
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• 제13권9호
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• pp.4165-4170
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• 2012

본 논문에서는 마이크로 스트립으로 급전되는 quasi-Yagi 안테나(QYA)의 이득과 대역폭 개선방법에 대해 연구하였다. QYA의 광대역 특성은 평면 기판 상에 코플래너 스트립으로 급전되는 평면 다이폴 투사기와 그에 근접하는 기생 도파기로부터 얻을 수 있다. 도파기와 접지면 반사기를 추가하여 대역 내 안정된 이득분포를 갖도록 한다. 단락 종단된 마이크로 스트립 선로와 슬롯 선로로 구성된 안테나 내장형 밸런에 의해 QYA를 급전하며, 급전위치를 조절하여 광대역 임피던스 정합을 얻는다. 1.75-2.7 GHz 대역을 포함하고 이득이 4.5 dBi 이상인 QYA를 설계하고 FR4 기판(비유전율 4.4, 두께 1.6mm)상에 제작하였다. 실험결과 제작된 안테나는 대역폭 59.7%(1.55-2.87 GHz), 안정된 이득(4.7-6.5 dBi), 10 dB 이상의 전후방비 등의 우수한 특성을 보였다. 실험결과와 컴퓨터 시뮬레이션 결과가 잘 일치하여 본 연구의 타당성을 검증하였다.