• Journal of the Korea Organic Resources Recycling Association
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• v.28 no.1
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• pp.53-64
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• 2020

A 2㎥/d combined wastewater treatment pilot plant containing the multi-stage vertical stacking type nitrification reactor was installed and operated for more than 1 year under the operating conditions of the short-circuit nitrogen process (pH 8, DO 1mg/L and Internal return rate 4Q from nitrification to denitrification reactor). For economically the combination treatment of food wastewater and the leachate from a landfill, the optimal combination ratio was operated by adjusting the food wastewater with the minimum oil content to 5-25% of the total throughput. The main treatment efficiency of the three-phase centrifugal separator which was introduced to effectively separate solids and oil from the food wastewater was about 52% of SS from 116,000mg/L to 55,700mg/L, and about 48% of normal hexane (NH) from 53,200mg to 27,800 mg/L. During the operational period, the average removal efficiency in the combined wastewater treatment process of BOD was 99.3%, CODcr 94.2%, CODmn 90%, SS 70.1%, T-N 85.8%, and T-P 99.2%. The average concentrations of BOD, CODcr, T-N, and T-P of the treated water were all satisfied with the discharge quality standard for landfill leachate ("Na" region), and SS was satisfied after applying the membrane process. On-site leachate had a relatively high nitrite nitrogen content in the combined wastewater due to intermittent aeration of the equalization tanks and different monthly discharges. Nevertheless nitrite nitrogen was accumulated, denitrification from nitrite nitrogen was observed rather than denitrification after complete nitrification. The average input of anti-forming chemical during the operation period is about 2L/d, which seems to be economical compared to the input of methanol required to treat the same wastewater.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.689-693
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• 2009

We investigate the comparison of fault current characteristics between the separates three-phase flux-lock type superconducting fault current limiter(SFCL) and integrated three-phase flux-lock type superconducting fault current limiter(SFCL). The single-phase flux-lock type SFCL consists of two coils. The primary coil is wound in parallel to the secondary coil on an iron core and superconducting elements are connected to secondary coil in series. Superconducting elements are used by the YBCO coated conductor. The separated three-phase flux-lock type SFCL consists of single-phase flux-phase type SFCL in each phase. But the integrated three-phase flux-lock type SFCL consists of three-phase flux-reactors wound on an iron core. Flux-reactor consists of the same turn's ratio between coil 1 and coil 2 for each single phase. To compare the current limiting characteristics of the separated three-phase flux-lock type SFCL and integrated three-phase flux-lock type SFCL, the short circuit experiments are carried out fault condition such as the single line-to-ground fault. The experimental result shows that fault current limiting characteristic of the separated three-phase flux-lock type SFCL was better than integrated three-phase flux-lock type SFCL. And the integrated three-phase flux-lock type SFCL has an effect on sound phase.

• Journal of Welding and Joining
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• v.17 no.1
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• pp.124-132
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• 1999

Thermal fatigue strength of the solder joints is the most critical issue for TSOP(Thin Small Outline Package) because the leads of this package are extremely short and thermal deformation cannot be absorbed by the deflection of the lead. And the TSOP body can be subject to early fatigue failures in thermal cycle environments. This paper was discussed distribution of thermal stresses at near the joint between silicon chip and die pad and investigated their reliability of solder joints of TSOP with 42 alloy clad lead frame on printed circuit board through FEM and 3 different thermal cycling tests. It has been found that the stress concentration around the encapsulated edge structure for internal crack between the silicon chip and Cu alloy die pad. And using 42 alloy clad, The reliability of TSOP body was improved. In case of using 42 alloy clad die pad(t=0.03mm). $$\sigma$_{VMmax}$ is 69Mpa. It is showed that 15% improvement of the strength in the TSOP body in comparison with using Cu alloy die pad $($\sigma$_{VMmax}$=81MPa). In solder joint of TSOP, the maximum equivalent plastic strain and Von Mises stress concentrate on the heel of solder fillet and crack was initiated in it's region and propagated through the interface between lead and solder. Finally, the modified Manson-Coffin equation and relationship of the ratio of $N_{f}$ to nest(η) and cumulative fracture probability(f) with respect to the deviations of the 50% fracture probability life $(N_{f 50%})$ were achieved.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.39-46
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• 2013

In this paper, organic solar cells(OSCs) based on bulk-heterojunction structures were fabricated by spin coating method using polymer P3HT and fullerene PCBM as a photoactive layer. The fabricated OSCs had a simple glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structures. The photoactive layer of mixed P3HT:PCBM was formed with 1:1 weight ratio. The hole transport layer(HTL) was used conducting polymer PEDOT:PSS concentration with gold nanoparticles. The annealing temperature and concentration of nanoparticles in HTL were verified to improve the OSC characterization. The percentage of gold nanoparticles in HTL were 0.5 wt% and 1.0 wt%, and the surface morphology, electrical properties and absorption intensities were investigated. The devices were 0.5 wt%, and the highest 3.1% of the powder conversion efficiency(PCE), 10.2 $mA/cm^2$ of the maximum short circuit current density($J_{SC}$), 0.535V of the open circuit voltage($V_{OC}$) and 55.8% of the fill factor(F.F) could be obtained when the nanoparticle concertration was 0.5 wt%. The annealing temperature of HTL was $110^{\circ}C$, $130^{\circ}C$, $150^{\circ}C$ in vacuum oven and measured the absorption intensities, surface morphology, crystallinity and electrical properties were investigated. The best property was obtained in HTL annealed at $130^{\circ}C$ for gold nanoparticles of 0.5 wt%, showing that $J_{SC}$, $V_{OC}$, F.F and PCE were about 12.0 $mA/cm^2$, 0.525V, 64.2% and 4.0%, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.63-67
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• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Applied Chemistry for Engineering
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• v.24 no.4
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• pp.396-401
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• 2013

Alternating copolymers, poly[9-(2-octyl-dodecyl)-9H-carbazole-alt-4,7-di-thiophen-2-yl-benzo[1,2,5]thiadiazole] (PCD20TBT) and poly[9,10-bis-(2-octyl-dodecyloxy)-phenanthrene-alt-4,7-di-thiophen-2-yl-benzo[1,2,5]thiadiazole] (PN40TBT), were synthesized by the Suzuki coupling reaction. The copolymers were soluble in common organic solvents such as chloroform, chlorobenzene, 1,2-dichlorobenzene, tetrahydrofuran and toluene. The maximum absorption wavelength and the band gap of PCD20TBT were 535 nm and 1.75 eV, respectively. The maximum absorption wavelength and the band gap of PN40TBT were 560 nm and 1.97 eV, respectively. The HOMO and the LUMO energy level of PCD20TBT were -5.11 eV and -3.36 eV, respectively. As for PN40TBT, the HOMO and the LUMO energy level of PCD20TBT were -5.31 eV and -3.34 eV, respectively. The polymer solar cells (PSCs) based on the blend of copolymer and PCBM (1 : 2 by weight ratio) were fabricated. The power conversion efficiencies of PSCs based on PCD20TBT and PN40TBT were 0.52% and 0.60%, respectively. The short circuit current density ($J_{SC}$), fill factor (FF) and open circuit voltage ($V_{OC}$) of the device with PCD20TBT were $-1.97mA/cm^2$, 38.2% and 0.69 V. For PN40TBT, the $J_{SC}$, FF, and $V_{OC}$ were $-1.77mA/cm^2$, 42.9%, and 0.79 V, respectively.

• Journal of Powder Materials
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• v.31 no.1
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• pp.16-22
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• 2024

Composite-based piezoelectric devices are extensively studied to develop sustainable power supply and self-powered devices owing to their excellent mechanical durability and output performance. In this study, we design a lead-free piezoelectric nanocomposite utilizing (Ba_0.85 Ca_0.15)(Ti_0.9Zr_0.1)O₃ (BCTZ) nanomaterials for realizing highly flexible energy harvesters. To improve the output performance of the devices, we incorporate porous BCTZ nanowires (NWs) into the nanoparticle (NP)-based piezoelectric nanocomposite. BCTZ NPs and NWs are synthesized through the solid-state reaction and sol-gel-based electrospinning, respectively; subsequently, they are dispersed inside a polyimide matrix. The output performance of the energy harvesters is measured using an optimized measurement system during repetitive mechanical deformation by varying the composition of the NPs and NWs. A nanocomposite-based energy harvester with 4:1 weight ratio generates the maximum open-circuit voltage and short-circuit current of 0.83 V and 0.28 ㎂, respectively. In this study, self-powered devices are constructed with enhanced output performance by using piezoelectric energy harvesting for application in flexible and wearable devices.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4165-4170
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• 2012

In this paper, a method for the improvement in the gain and bandwidth of a microstrip-fed broadband planar quasi-Yagi antenna (QYA) is studied. The broadband characteristics of the QYA are achieved from the coplanar strip-fed planar dipole driver and a parasitic director close to the driver. In order to obtain stable gain variation over the required frequency band, a director and a ground reflector are appended to the driver having a nearby parasitic director. The QYA is fed through an integrated balun composed of a microstrip line and a slot line which are terminated in a short circuit. By adjusting the feeding point, a broadband impedance matching is obtained. A QYA with an operating frequency band of 1.75-2.7 GHz and a gain > 4.5 dBi is designed and fabricated on an FR4 substrate with dielectric constant of 4.4 and thickness of 1.6mm. The experimental results show that the fabricated antenna has good performance such as a broad bandwidth of 59.7%(1.55-2.87 GHz), a stable gain between 4.7-6.5 dBi, and a front-to-back ratio > 10 dB. The measured data agree well with the simulation, which validates this study.