• Korean Journal of Crystallography
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• v.11 no.4
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.39-43
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• 1998

Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5A
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• pp.674-681
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• 2000

We proposed polymer based vertical asymmetric optical coupler. And we optimized the proposed device by coupling characteristic analysis In 1.33um wavelength, TE mode, we obtained very short coupling length(L=277.6um), high coupling efficiency(94%). The merits of proposed device are low propagation loss due to very short full device, low production cost and time, and high integrated fabrication. We will use this to fabricate optical switch, modulator and tunable WDM devices, etc.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.5
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• pp.39-45
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• 1978

This paper described on the varactor tuning Gunn oscillator for X band. Analyzed the coplanar 2 post case using the dyadic Green's function then derived the obstacle network for the incident TE10 mode. For the electronical tuning, used the tuning varactor diode which has a high speed dynamic response characteristic and high Q. Oscillation frequency, switching mode, and stable oscillation point were calculated by the computer simulation. In the expriments, switching mode was occurred at 18 mm, 32.5 mm of the short tcircuit position, respectively. The general characteristics of the varactor tuning Gunn oscillator were abruptly changed by the moving of the short circuit and the variation of the bias voltage.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.50 no.12
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• pp.590-596
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• 2001

The pre-emphasis is an essential process for speech signal processing. Widely used two methods are the typical method using a fixed value near unity and te optimal method using the autocorrelation ratio of the signal. This study proposes a new pre-emphasis method using the short-term energy difference of speech signal, which can effectively compensate the glottal source characteristics and lip radiation characteristics. Using the proposed pre-emphasis, speech analysis, such as spectrum estimation, formant detection, is performed and the results are compared with those of the conventional two pre-emphasis methods. The speech analysis with 5 single vowels showed that the proposed method enhanced the spectral shapes and gave nearly constant formant frequencies and could escape the overlapping of adjacent two formants. comparison with FFT spectra had verified the above results and showed the accuracy of the proposed method. The computational complexity of the proposed method reduced to about 50% of the optimal method.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.4
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• pp.11-19
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• 1995

In this paper, the Finite Difference Time Domain (FDTD) method is used to analyse the characteristics of the coaxial line transmission coefficent, shielding effectiveness, and compared to results of the moment method. The excitation mode of the Gaussian pulse is assumed to be a TEM-mode instead of the TE or TM-mode and in order to eliminate the reflected wave with in short length of the line. Calculated value of shielding effectiveness of the coaxial line by the FDTD are in good agreement with the results of the moment method.

• Genomics & Informatics
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• v.10 no.4
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• pp.226-233
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• 2012

Since the advent of whole-genome sequencing, transposable elements (TEs), just thought to be 'junk' DNA, have been noticed because of their numerous copies in various eukaryotic genomes. Many studies about TEs have been conducted to discover their functions in their host genomes. Based on the results of those studies, it has been generally accepted that they have a function to cause genomic and genetic variations. However, their infinite functions are not fully elucidated. Through various mechanisms, including de novo TE insertions, TE insertion-mediated deletions, and recombination events, they manipulate their host genomes. In this review, we focus on Alu, L1, human endogenous retrovirus, and short interspersed element/variable number of tandem repeats/Alu (SVA) elements and discuss how they have affected primate genomes, especially the human and chimpanzee genomes, since their divergence.

• Journal of Communications and Networks
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• v.12 no.6
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• pp.533-543
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• 2010

This paper proposes an orthogonal frequency division multiplexing (OFDM) waveform for the forward link of a fixed broadband satellite system. We focus on the synchronization tasks in the receiver. Our objective is to minimize the required overhead, in order to improve the spectral efficiency with regard to a single carrier waveform system. A non pilot aided algorithm is used for fine synchronization. It is preceded by a coarse synchronization stage, which relies on a limited overhead (short cyclic prefix associated to some pilots). The performance of the proposed receiver is assessed through simulation results.

• Journal of the Optical Society of Korea
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• v.8 no.4
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• pp.163-167
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• 2004

We propose and demonstrate an external optical modulation method based on TE/TM-mode absorption nulls in a Multiple Quantum Well(MQW) Fabry-Perot laser diode(FP-LD). The center wavelength of the absorption nulls is rapidly shifted to short-wavelength by the small current change(~1mA) in the FP-LD, which can modulate an optical signal with more than 10 dB of extinction ratio(ER). The shift of the center wavelength comes from the refractive index change due to anomalous dispersion and the plasma effect in MQW FP-LD waveguide. Non-inverting and inverting signals are made by TE- and TM-mode absorption nulls at 155.52 Mbps and BERs for the signals are measured.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.