• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2003년도 하계학술대회
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• pp.286-288
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• 2003

In this paper, in order to obtain a large differential phase shift with a little change in applied voltage, a ferroelectric reflective load circuit has been designed on top of barium strontium titanate $(Ba,Sr)TiO_3$ [BST] thin film. The design of the ferroelectric reflection-type phase shifter is based on a reflection theory of terminating circuit, which has a reflection-type analogue phase shifter with two ports terminated in symmetric phase-controllable reflective networks. To achieve large amounts of phase shift in low bias-voltage range, the effects of change of capacitance and transmission line connected with two coupled ports of a 3-dB $90^{\circ}$ branch-line hybrid coupler have been investigated. A large phase shift with a small capacitance change in the parallel terminating circuit has been demonstrated in the paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.525-526
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• 2008

This paper proposes a new high-speed level shifter using a special high voltage device with low threshold voltage. Also, novel low voltage swing method is proposed. The high voltage device is a standard LDMOS(Laterally Diffused MOS) device in a $0.18{\mu}m$ CMOS process without adding extra mask or process step to realize it. A level shifter uses 5V LDMOSs as voltage clamps to protect 1.8V NMOS switches from high voltage stress the gate oxide. Also, level-up transition from 1.8V to 5V takes only 1.5ns in time. These circuits do not consume static DC power, therefore they are very suitable for low-power and high-speed interfaces in the deep sub-quarter-micron CMOS technologies.

• 한국군사과학기술학회지
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• 제20권3호
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• pp.413-420
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• 2017

We investigate the performance of a true time delay(TTD) phase shifter to reduce the beam squint caused by frequency changes of a phased array antenna in wideband communication systems. To design a high gain phased array antenna, we need a long TTD, which causes high RF loss, low resolution and large dimension of TTD phase shifters. To overcome the problems, we propose a schematic of dual TTD phase shifters, which consists of short time delay(STD) in radio frequency(RF) part and long time delay(LTD) in intermediate frequency(IF) part. Our analysis results show that the proposed scheme reduces the required bits and delay time in RF band of the TTD compared to the conventional single TTD scheme.

• 대한전자공학회논문지TC
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• 제40권9호
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• pp.392-397
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• 2003

Lange 커플러를 이용한 반사구조 위상변위기는 광대역에서 위상변이를 얻는데 사용되는 회로이다. 이런 5-비트 반사구조에서 33.75°는 대개 11.25°와 22.5°를 동시에 "on"시켜서 얻는 방법이 사용되어져 왔다. 본 논문은 33.75° 위상특성을 개선하기 위하여 GaAs PM 다이오드와 리액티브 부하로 구성된 별도의 회로를 제안하였으며 MMIC로 구현하였다. 2-6 GHz에서 제안된 회로는 기 발표 논문에 비하여 33.75°를 기준으로 할 때 평균 4.7° 개선된 특성을 얻었다. 기존 회로와 비교할 때 삽입손실 및 반사손실은 거의 변화가 없었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.464-465
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• 2009

A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.

• Journal of electromagnetic engineering and science
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• 제6권1호
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• pp.1-9
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• 2006

A sandwich structure of dielectric material and air gap inside a rectangular waveguide is proposed as a fast electrically tunable low-loss phase shifter. As the dielectric material is shifted up and down by piezoelectric actuator and, thereby, the thickness of air gap is changed, the effective dielectric constant of the sandwich structure is varied. Phase shifters based on the sandwich structure with different dielectric materials showed phase shift of $20{\sim}200^{\circ}/cm$ at X-band as the thickness of air gap varied up to $30{\mu}m$. The idea can be extended toward low-loss millimeter wave phase shifters since modem microwave ceramics have been developed to show very low dielectric loss$(tan\;{\delta}{\sim}10^{-4})$.

• ETRI Journal
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• 제42권6호
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• pp.943-950
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• 2020

We propose 8.2-GHz band radar RFICs for an 8 × 8 phased-array frequency-modulated continuous-wave receiver developed using 65-nm CMOS technology. This receiver panel is constructed using a multichip solution comprising fabricated 2 × 2 low-noise amplifier phase-shifter (LNA-PS) chips and a 4ch RX front-end chip. The LNA-PS chip has a novel phase-shifter circuit for low-voltage operation, novel active single-to-differential/differential-to-single circuits, and a current-mode combiner to utilize a small area. The LNA-PS chip shows a power gain range of 5 dB to 20 dB per channel with gain control and a single-channel NF of 6.4 dB at maximum gain. The measured result of the chip shows 6-bit phase states with a 0.35° RMS phase error. The input P1 dB of the chip is approximately -27.5 dBm at high gain and is enough to cover the highest input power from the TX-to-RX leakage in the radar system. The gain range of the 4ch RX front-end chip is 9 dB to 30 dB per channel. The LNA-PS chip consumes 82 mA, and the 4ch RX front-end chip consumes 97 mA from a 1.2 V supply voltage. The chip sizes of the 2 × 2 LNA-PS and the 4ch RX front end are 2.39 mm × 1.3 mm and 2.42 mm × 1.62 mm, respectively.

• Nuclear Engineering and Technology
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• 제55권1호
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• pp.215-221
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• 2023

Proton treatment may deliver a larger dose to a patient's skin than traditional photon therapy, especially when a range shifter (RS) is inserted in the beam path. This study investigated the effects of an RS on skin dose while considering RS with different thicknesses, airgaps and materials. First, the physical model of the scanning nozzle with RS was established in the TOol for PArticle Simulation (TOPAS) code, and the effects of the RS on the skin dose were studied. Second, the variations in the skin dose and isocenter beam size were examined by reducing the air gap. Finally, the effects of different RS materials, such as polymethylmethacrylate (PMMA), Lexan, polyethylene and polystyrene, on the skin dose were analysed. The results demonstrated that the current RS design had a negligible effect on the skin dose, whereas the RS significantly impacted the isocenter beam size. The skin dose was increased considerably when the RS was placed close to the phantom. Moreover, the magnitude of the increase was related to the thickness of the inserted RS. Meanwhile, the results also revealed that the secondary proton primarily contributed to the increased skin dose.

• E2M - 전기 전자와 첨단 소재
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• 제18권12호
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• pp.11-17
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• 2005