• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• 한국정밀공학회지
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• 제16권4호통권97호
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• pp.57-63
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• 1999

A thin metal plate such as detent spring has the shape deformation due to the phenomenon of spring back after press machining and heat treatment process. This requires the correction of spring shape and force in final inspection process. To do correction of the shape deformation the impact force is manually applied to the bended part of detent spring after measuring the shape deformation and spring force. To develop the automatic spring force correction system, applied force of occurring plastic deformation must be derived from the experimental method. But frequent change of spring shape and material makes it difficult to accomplish the experimental method to be applied. This paper describes the analytical method for detent spring force correction system is to be substituted for the experimental method. FEM(Finite Element Method) is used to find the boundary value between elastic and plastic deformation in the analytical method. To confirm the validity of the analytical method, the result of two methods is compared each other at various applied force conditions. It shows that the simulation result of the analytical method is consistent with the result of the experimental method within the error bound ${\pm}$5%. The result of this paper is useful for development of the automatic spring correction system and reduction of the complicated and tedious processes involved in experimental method.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.106-109
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• 2005

Springback is a common phenomenon in sheet metal forming, caused by the elastic recovery of the internal stresses after removal of the tooling. Recently, advanced high strength steels (AHSS) such as TRIP and DP are finding acceptance in the automotive industry because their superior strength to weight ratio can lead to improved fuel efficiency and assessed crashworthiness of vehicles. The major troubles of the automotive structural members stamped with high strength steel sheets are the tendency of the large amount of springback due to the high yield strength and the tensile strength. The amount of springback is mainly influenced by the type of the yield function and anisotropic model induced by rolling. The discrepancy of the deep drawn product comparing the data of from the product design induced by springback must be compensated at the tool design stage in order to guarantee its function and assembly with other parts. The methodology of compensation of the low shape accuracy induced by large amount of springback is developed by the expert engineer in the industry. Recently, the numerical analysis is introduced in order to predict the amount of springback and to improve the shape accuracy prior to tryout stage of press working. In this paper, the tendency of springback is evaluated with respect to the blank material. The stamping process is analyzed fur the front side member formed with AHSS sheets such as TRIP60 and DP60. The analysis procedure fully covers the binderwrap, stamping, trimming and springback process with the commercial elasto-plastic finite element code LS-DYNA3D.

• 한국표면공학회지
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• 제55권6호
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• pp.353-362
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• 2022

Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb₂O₅, | SiO₂ structure and antistatic films of ITO designed on 100 × 100 × 3 mmt sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 𝛺/☐ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb₂O₅ 64 nm | SiO₂ 41 nm | sodalime glass | ITO 10 nm | Nb₂O₅ 64 nm | SiO₂ 41 nm.

• 한국산학기술학회논문지
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• 제19권5호
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• pp.184-189
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• 2018

최근에 안전기준과 환경규제 강화의 증대로 인해, 차체의 경량화에 대한 연구가 지속적으로 증가하고 있다. 고강도강의 응용은 가장 보편화 된 차체 경량화의 효과적인 방법 중에 하나이다. TWB(Tailor Welded Blank)는 다양한 두께와 용접을 사용하여 부분적인 강도와 경량화를 만족시키는 주요한 공법으로 활용되고 있다. 그러나 추가적인 용접공정으로 인해 판재간의 용접성이 중요하고 용접부에 대한 품질관리가 중요하다. 이점을 개선하기 위해, TRB(Tailor Rollded Blank)공법이 제안되었다. TRB는 롤러 압력을 조절하여 판재의 두께를 다르게 하고, 용접을 사용하는 TWB 공법보다 추가적인 용접공정이 없기 때문에 생산 비용적인 측면에서 훨씬 더 효율적이다. 본 연구에서는 Blank의 압연 영향을 조사하기 위해 스탬핑용 고강도강 TRB 판재의 성형성을 분석하였다. 성형성을 분석하기 위해, TRB 판재에서 0.8 mm, 1 mm의 두께를 갖는 부분을 채취하여 시험하였다. 시편에 새겨진 그리드마킹의 변형도를 분석하여 변형률을 조사하였고, 0.8 mm와 1.0 mm의 두께를 갖는 TRB 시편으로 Erichsen 시험을 한 후에 FE분석을 활용하여 성형성과 고유진동수를 비교하였다.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• 한국재료학회지
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• 제21권5호
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• pp.243-249
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• 2011

To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to $89^{\circ}C$/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

• 마이크로전자및패키징학회지
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• 제10권4호
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• pp.29-33
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• 2003

n-형 탄화규소 반도체에 대한 구리금속을 이용하여 오옴성 접촉 구조를 제작하였다. 제작된 구리접촉에 대해 후속열처리 조건과 금속접촉 구조에 따른 재료적, 전기적 성질의 변화를 조사하였다. 금속접촉의 오옴성 성질은 금속박막의 구조 뿐 아니라 열처리조건에 대해서도 크게 좌우됨을 알 수 있었다. 열처리는 급속열처리 장치를 이용한 진공상태 및 환원 분위기에서 2단계 열처리방식을 통하여 시행하였다. 접촉비저항의 측정을 위해 TLM 구조를 만들었으며 면저항 ($R_{s}$), 접합저항 ($R_{c}$), 이동거리 ($L_{T}$), 패드간거리 (d), 전체저항 ($R_{T}$) 값을 구하여 알려진 계산식에 의해 접촉비저항 ($p_{c}$) 값을 추정하였다. 진공보다 환원분위기에서 후속 열처리를 수행한 시편이 양호한 전기적 성질을 가짐을 알 수 있었다. 가장 양호한 결과는 Cu/Si/Cu 구조를 가진 금속접촉 결과이었으며 접촉비저항 ($p_{c}$)은 $1.2\times 10^{-6} \Omega \textrm{cm}^2$의 낮은 값을 얻을 수 있었다. 재료적 성질은 XRD를 이용하여 분석하였고 SiC 계면 상에 구리와 실리콘이 결합한 구리 실리사이드가 형성됨을 알 수 있었다.

• 한국안전학회지
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• 제30권4호
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• pp.1-7
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• 2015

Self-piercing riveting (SPR) process is gaining popularity due to its many advantages. The SPR does not require a pre-drilled hole and has capability to join a wide range of similar or dissimilar materials and combinations of materials. This study investigated the fatigue strength of self-piercing rivet joint with aluminum alloy (Al-5052) and steel (SPCC) sheets. Static and fatigue tests on tensile-shear specimens were conducted. From the static strength aspect, the optimal punching force for the specimen with upper SPCC (U.S) sheet and lower aluminum alloy(L.A) sheets was 34 kN. During static test the specimens fractured in pull-out fracture mode due to influence of plastic deformation of joining area. There was a relationship between applied load amplitude $P_{amp}$ and number of cycles N ; $P_{amp}=19588N_f^{-0.211}$ and $P_{amp}=4885N_f^{-0.083}$ for U.S-L.A and U.A-L.S specimens, respectively. U.A-L.S fatigue specimens failed due to fretting crack initiation around the rivet neck between upper and lower sheets.