• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.1
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• pp.559-564
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• 2011

The UV blocking type pressure-sensitive adhesive sheet was developed by mixing UV blocking reagent with adhesive material, instead of conventional method in which the reagent was mixed with PVC substrate. The blocking performance of the sheet was evaluated by measuring the absorbance in 280-400 nm region. Both organic and inorganic type blocking reagents were examined. The blocking ability of the former is better than that of the later. Only 1% addition of blocking reagents is effective to block UV light without affecting to visibility and tackiness of adhesive tapes.

• Journal of Navigation and Port Research
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• v.27 no.1
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• pp.71-74
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• 2003

Electromagnetic wave absorbers with sheet type have been fabricated and their absorption properties are measured. The absorbtion properties of the fabricated ferrite absorbers were improved with decreasing the particle size in the frequency range of 2.4~3.2 GHz.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.195-202
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• 1998

The LPCVD system of batch type for the massproduction of semiconductor fabrication has a problem of phosphorous concentration uniformity in the boat. In this paper we study an improvement of the uniformity for phosphorous concentration and sheet resistance. These property was improved by using the nitrogen process and modified long nozzle for gas injection tube in the doped polysilicon deposition system. The phosphorous concentration and its uniformity for polysilicon film are measured by XRF(X-ray Fluorescence) for the conventional process condition and nitrogen process. In conventional process condition, the phosphorous concentration, it uniformity and sheet resistance for polysilicon film are in the range of 3.8~5.4$\times$10\ulcorner atoms/㎤, 17.3% and 59~$\Omega$/ , respectively. For the case of nitrogen process the corresponding measurements exhibited between 4.3~5.3$\times$10\ulcorner atoms/㎤, 10.6% and 58~81$\Omega$/ . We find that in the nitrogen process the uniformity of phosphorous concentration improved compared with conventional process condition, however, the sheet resistance in the up zone of the boat increased about 12 $\Omega$/ . In modified long nozzle, the phosphorous concentration, its uniformity and sheet resistance for polysilicon films are in the range of 4.5~5.1$\times$10\ulcorner atoms/㎤, 5.3% and 60~65$\Omega$/ respectively. Annealing after $N_2$process gives the increment of grain size and the decrement of roughness. Modification of nozzle gives the increment of injection amount of PH$_3$. Both of these suggestion result in the stable phosphorous concentration and sheet resistance. The results obtained in this study are also applicable to process control of batch type system for memory device fabrication.

• Journal of the Korea Institute of Building Construction
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• v.18 no.5
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• pp.463-469
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• 2018

A currently used roof green system with multi layers has a low constructability. Therefore a new integrated waterproof & root barrier sheet and roof green box unit system was developed using steel plate fixture and cone type fixture by electromagnetic induction heating method. This study was proceeded to evaluate adhesion performance of two types of fixtures on Engineering PE, TPO, PVC sheet in a normal condition, repeated heating and cooling condition. As a result, adhesion load on Engineering PE sheet showed the highest value. The adhesion loads of steel plate fixture showed higher value as heating temperature was getting higher. However adhesion loads of cone type fixture showed opposite tendency. Regarding to the test conditions, test results of normal condition, repeated heating and cooling condition showed same value. The cone type fixture using butyl tape showed 7 times lower adhesion load than that of cone type fixture using electromagnetic heating and 28% lower adhesion load in a repeated heating and cooling condition than a usual condition.

• Journal of the Korean GEO-environmental Society
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• v.5 no.4
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• pp.57-63
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• 2004

In general steel sheet piles are used in the containment system, which are vertical barrier systems for waste disposal and landfill purposes, and roads in excavation for temporary structure. This paper presents case study of the use of an interlocking sheet pile for water and containment. Cut-off Z-type sheet pile joints are investigated to determine their permeability from the field test. Four different joint sealing materials are used in field test. The results showed joint permeability is significant time-dependent and joint-dependent. These are explored and conclusions on permeability characteristics of different sealants are noted. A case study gives a design example as well as suggestion on permeability and water tightness can be implemented in using the sheet pile barrier in civil and environment works. From the test results, the effective sealing programs of sheet pile interlocks are suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.185.2-185.2
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• 2014

We have studied the atomic and electronic structure of graphene nanoribbons (GNRs) on a hexagonal boron nitride (h-BN) sheet with intercalated atoms using first-principles calculations. The h-BN sheet is an insulator with the band gap about 6 eV and then it may a good candidate as a supporting dielectric substrate for graphene-based nanodevices. Especially, the h-BN sheet has the similar bond structure as graphene with a slightly longer lattice constant. For the computation, we use the Vienna ab initio simulation package (VASP). The generalized gradient approximation (GGA) in the form of the PBE-type parameterization is employed. The ions are described via the projector augmented wave potentials, and the cutoff energy for the plane-wave basis is set to 400 eV. To include weak van der Waals (vdW) interactions, we adopt the Grimme's DFT-D2 vdW correction based on a semi-empirical GGA-type theory. Our calculations reveal that the localized states appear at the zigzag edge of the GNR on the h-BN sheet due to the flat band of the zigzag edge at the Fermi level and the localized states rapidly decay into the bulk. The open-edged graphene with a large corrugation allows some space between graphene and h-BN sheet. Therefore, atoms or molecules can be intercalated between them. We have considered various types of atoms for intercalation. The atoms are initially placed at the edge of the GNR or inserted in between GNR and h-BN sheet to find the effect of intercalated atoms on the atomic and electronic structure of graphene. We find that the impurity atoms at the edge of GNR are more stable than in between GNR and h-BN sheet for all cases considered. The nickel atom has the lowest energy difference of ~0.2 eV, which means that it is relatively easy to intercalate the Ni atom in this structure. Finally, the magnetic properties of intercalated atoms between GNR and h-BN sheet are investigated.

• Korean Journal of Materials Research
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• v.32 no.2
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• pp.72-79
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• 2022

A cold roll-bonding process using AA1050, AA5052 and AA6061 alloy sheets is performed without lubrication. The roll-bonded specimen is a multi-layer complex aluminum alloy sheet in which the AA1050, AA5052 and AA6061 sheets are alternately stacked. The microstructural evolution with the increase of annealing temperature for the roll-bonded aluminum sheet is investigated in detail. The roll-bonded aluminum sheet shows a typical deformation structure in which the grains are elongated in the rolling direction over all regions. However, microstructural evolution of the annealed specimen is different depending on the type of material, resulting in a heterogeneous microstructure in the thickness direction of the layered aluminum sheet. Complete recrystallization occurs at 250 ℃ in the AA5052 region, which is lower by 100K than that of the AA1050 region. Variation of the misorientation angle distribution and texture development with increase of annealing temperature also differ depending on the type of material. Differences of microstructural evolution between aluminum alloys with increase of annealing temperature can be mainly explained in terms of amounts of impurities and initial grain size.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.3
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• pp.231-239
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• 1999

Volume fraction and morphology of retained austenite, tensile properties of TRIP type high strength steel sheet with Fe-C-Si-Mn-Cu chemical composition have been investigated. The retained austenite of granular, bar and film type existing in specimen was obtained after intercritical annealing and austempering. The granular type retained austenite increased with increase of intercritical annealing and austempering temperature. With increase of intercritical annealing temperature, retained austenite and carbon contents increased. Maximum contents of retained austenite was obtained by austempering at $400^{\circ}C$. The maximum tensile strength was obtained by austempering at $450^{\circ}C$ and maximum elongation was obtained at $400^{\circ}C$. T.S${\times}$E.L value increased with increase of retained austenite contents due to the elongation strongly controlled by contents of retained austenite, but tensile strength was affected with various factors such as bainitic structure etc.