• Title/Summary/Keyword: Sheet Metal

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Thermoelastic eigenfrequency of pre-twisted FG-sandwich straight/curved blades with rotational effect

  • Souvik S. Rathore;Vishesh R. Kar;Sanjay
    • Structural Engineering and Mechanics
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    • v.86 no.4
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    • pp.519-533
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    • 2023
  • This work focuses on the dynamic analysis of thermal barrier coated straight and curved turbine blades modelled as functionally graded sandwich panel under thermal environment. The pre- twisted straight/curved blade model is considered to be fixed to the hub and, the complete assembly of the hub and blade are assumed to be rotating. The functionally graded sandwich composite blade is comprised of functionally graded face-sheet material and metal alloy core. The constituents' material properties are assumed to be temperature-dependent, however, the overall properties are evaluated using Voigt's micromechanical scheme in conjunction with the modified power-law functions. The blade model kinematics is based on the equivalent single-layer shear deformation theory. The equations of motion are derived using the extended Hamilton's principle by including the effect of centrifugal forces, and further solved via 2D- isoparametric finite element approximations. The mesh refinement and validation tests are performed to illustrate the stability and accurateness of the present model. In addition, frequency characteristics of the pre-twisted rotating sandwich blades are computed under thermal environment at various sets of parametric conditions such as twist angles, thickness ratios, aspect ratios, layer thickness ratios, volume fractions, rotational velocity and blade curvatures which can be further useful for designing the blade type structures under turbine operating conditions.

Finite Element Analysis Design of Axisymmetric Deep Drawing Process by Local Heating (국소 가열 방법을 이용한 2단계 축대칭 디프 드로잉 공정의 해석 및 설계)

  • Lee, Dong-Woo;Song, In-Seob;Yang, Dong-Yol
    • Journal of the Korean Society for Precision Engineering
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    • v.10 no.3
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    • pp.198-204
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    • 1993
  • The study is concerned with finite element analysis and design of axisymmetric deep drawing by local heating. When the bottom shape of a cup is not flat but in complex-shaped, i.e., hemispherical, the cup cannot be drawn in one or two processes in the conventional deep drawing process and the limit drawing ratio is limited as well. By introducing local heating selectively with regards to the heating position, the formability of the sheet metal can be greatly increased with the reduced number of processes. In the Process analysisthe rigid- viscoplastic finite element method is employed and the temperature effect is incorporated. Bishop's step-wise decoupled method is employed to analyze the thermomechanical interaction between deformation and heat transfer. Axisymmetric deep drawing of a hemisphere-bottomed cup has been analyzed for various combinations of heat application in the punch and the die. At the first stage of deep drawing stretch forming is practically carried out by firmly pressing the blankholder with the punch and the die heated at various levels of temperature. Then at the second stage the same cup is drawn for the saame or different combination of temperature. From the computation, it has thus been shown that the fromability of a cup is greatly increased in two-stage deep drawing with increased limet drawing ratio.

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A Study on the Electrical Characteristics of Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 Structure for Multi-Level Phase Change Memory (다중준위 상변환 메모리를 위한 Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 구조의 전기적 특성 연구)

  • Oh, Woo-Young;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.44-49
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    • 2022
  • In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge2Sb2Te5/Ti/W-doped Ge8Sb2Te11, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge2Sb2Te5 and W-doped Ge8Sb2Te11 films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge8Sb2Te11 film was about 1 order larger than that of Ge2Sb2Te5 film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge2Sb2Te5 (150 nm)/Ti (20 nm)/W-Ge8Sb2Te11 (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

Morphology Control of Nanostructured Graphene on Dielectric Nanowires

  • Kim, Byeong-Seong;Lee, Jong-Un;Son, Gi-Seok;Choe, Min-Su;Lee, Dong-Jin;Heo, Geun;Nam, In-Cheol;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.375-375
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    • 2012
  • Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.

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Experimental and numerical disbond localization analyses of a notched plate repaired with a CFRP patch

  • Abderahmane, Sahli;Mokhtar, Bouziane M.;Smail, Benbarek;Wayne, Steven F.;Zhang, Liang;Belabbes, Bachir Bouiadjra;Boualem, Serier
    • Structural Engineering and Mechanics
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    • v.63 no.3
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    • pp.361-370
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    • 2017
  • Through the use of finite element analysis and acoustic emission techniques we have evaluated the interfacial failure of a carbon fiber reinforced polymer (CFRP) repair patch on a notched aluminum substrate. The repair of cracks is a very common and widely used practice in the aeronautics field to extend the life of cracked sheet metal panels. The process consists of adhesively bonding a patch that encompasses the notched site to provide additional strength, thereby increasing life and avoiding costly replacements. The mechanical strength of the bonded joint relies mainly on the bonding of the adhesive to the plate and patch stiffness. Stress concentrations at crack tips promote disbonding of the composite patch from the substrate, consequently reducing the bonded area, which makes this a critical aspect of repair effectiveness. In this paper we examine patch disbonding by calculating the influence of notch tip stress on disbond area and verify computational results with acoustic emission (AE) measurements obtained from specimens subjected to uniaxial tension. The FE results showed that disbonding first occurs between the patch and the substrate close to free edge of the patch followed by failure around the tip of the notch, both highest stress regions. Experimental results revealed that cement adhesion at the aluminum interface was the limiting factor in patch performance. The patch did not appear to strengthen the aluminum substrate when measured by stress-strain due to early stage disbonding. Analysis of the AE signals provided insight to the disbond locations and progression at the metal-adhesive interface. Crack growth from the notch in the aluminum was not observed until the stress reached a critical level, an instant before final fracture, which was unaffected by the patch due to early stage disbonding. The FE model was further utilized to study the effects of patch fiber orientation and increased adhesive strength. The model revealed that the effectiveness of patch repairs is strongly dependent upon the combined interactions of adhesive bond strength and fiber orientation.

The formability of high strength steel plate applied TRB for stamping (스탬핑용 고강도강 TRB 판재의 성형 특성)

  • Park, Hyun-kyung;Jeong, Ji-Won;Lee, Gyung-Min
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.5
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    • pp.184-189
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    • 2018
  • Recently, research on lightweight automobiles is increasing continuously to respond to the high safety standards and environmental regulations. The application of high strength steel is one of the effective methods for developing lightweight car bodies. A TWB (Tailor Welded Blank) is major method that allows partial high strength with light weighting using a multi-thickness and multi-material welded blank. On the other hand, additional welding process is required to prepare the blank and quality control for the welding process also required. To secure this point, the TRB (Tailor Rolled Blank) method was suggested. In the TRB method, the thickness of sheet is controlled by the rolling presses and the production efficiency is much higher than welding in TWB methods. In this study, the formability of high strength TRB steel plate was analyzed to examine the rolling effect of the blank. The formability of the specimen was tested using 0.8 and 1 mm thick steel sheets for the TRB plate. The strain was analyzed by the digital image sensing of grid markings on the specimen and the forming limit diagram was calculated. An Erichsen test for the 0.8 and 1 mm thick TRB specimens was carried out and the formability was investigated by comparing with FE analysis.

Process technology and the formation of the TiN barrier metal by physical vapor deposition (PVD 방법에 의한 TiN barrier metal 형성과 공정개발)

  • 최치규;강민성;박형호;염병렬;서경수;이종덕;김건호;이정용
    • Journal of the Korean Vacuum Society
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    • v.6 no.3
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    • pp.255-262
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    • 1997
  • Titanium nitride (TiN) films were prepared by reactive sputter deposition in mixed gas of Ar+$N_2$. The volume percentage of $N_2$ in the working gas was chosen so as to grow stoichiometric TiN films and the substrate temperature during film growth was set from room temperature to $700^{\circ}C$. Stoichiometric $Ti_{0.5}N){0.5}$ films with (111) texture were grown at temperatures over $600^{\circ}C$, while films prepared at temperatures below $600^{\circ}C$ showed N-rich TiN. The composition X and y in the $Ti_xN_y$ films determined by XPS and RBS varied within 5% with the substrate temperature. The sheet resistance of the TiN films decreases as the substrate temperature increased. TiN film prepared at $600^{\circ}C$ showed 14.5$\Omega\Box$, and it decreased to 8.9$\Omega\Box$ after the sample was annealed at $700^{\circ}C$, 30 sec in Ar-gas ambient by RTA. By far, high quality stoichiometric TiN films by reactive sputtering in the mixed gas ambient could be prepared at substrate temperature over $600^{\circ}C$.

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Drainage and Treatment Characteristics of Runoff by Media (여재에 따른 도로면 유출수의 배수 및 처리특성)

  • Kim, Seog-gu;Yun, Sang-Ieen;Kim, Young-im;Lee, Yong-jae;Kim, Ree-ho;Kim, Jong-oh
    • Journal of Korean Society on Water Environment
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    • v.20 no.5
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    • pp.500-505
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    • 2004
  • While more attention has been paid in recent years to urban point source pollution control, no considerable measures have been taken to control urban non-point source pollution. Contaminants from non-point sources deposited on urban impermeable surfaces such as road and highway are easily released to the public waters by rainfall, leading to the deterioration in water quality in urban area. The present study investigated a system using filter media to reduce the level of contamination in urban road runoff. Three different media, designated as J-P (polypropylene, blowing type), B-P (polypropylene, fiber type), and P-F (Polyvinyl alcohol, cube and sheet type) were evaluated on the basis of pollutant removal efficiency as well as hydraulic property. Experiments were peformed using a 1/4-scale treatment unit at various pollutant roading and rainfall intensity with real rainwater runoff collected from road surfaces. The results at different rainfall intensities shows that the medium J-P is superior to the other media for water permeability. J-P was not blocked at 10 mm/hr rainfall and its permeability was stable. On the other hand, B-P and P-F resulted in substantial overflow ratio even at I mm/hr rainfall intensity. Comparing treatment efficiencies for suspended solids, all media showed similar removal ranged from 91 % to 95%. However, J-P seems to be better than the other media considering its higher water permeability. J-P and P-F, both hydrophobic, yielded over 76% of heavy metal removal. But, the hydrophilic media B-P showed much smaller removal ranging from 26% to 47%. This indicates that J-P and P-F are beneficial to remove heavy metal due to their hydrophobic property. The treatment efficiencies over PAHs (poly aromatic hydrocarbons) showed the similar removal efficiency ranging from 66% to 97% for all three media.

Influence of O2-Plasma Treatment on the Thin Films of H2 Post-Treated BZO (ZnO:B) (수소 플라즈마 처리된 BZO 박막에 산소 플라즈마의 재처리 조건에 따른 BZO 박막 특성)

  • Yoo, H.J.;Son, C.G;Yoo, J.H.;Park, C.K.;Kim, J.S.;Park, S.G.;Kang, H.D.;Choi, E.H.;Cho, G.S.;Kwon, G.C.
    • Journal of the Korean Vacuum Society
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    • v.19 no.4
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    • pp.275-280
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    • 2010
  • The influence of $O_2$-plasma treatment on $H_2$ post-treated BZO (ZnO:B) thin film using MOCVD (Metal-Organic Chemical Vapor Deposition) are investigated. An $O_2$-plasma treatment of the $H_2$ post-treated BZO thin films resulted in XRD peak of (100), (101) and (110). Also, electrical properties resulted in an increase in sheet resistance and work function. The weighted optical transmittance and haze at 300~1,100 nm of BZO thin films with $O_2$-plasma treatment on the $H_2$ post-treatment show approximately 86% and 15%, respectively.

CMOS 소자 응용을 위한 Plasma doping과 Silicide 형성

  • Choe, Jang-Hun;Do, Seung-U;Seo, Yeong-Ho;Lee, Yong-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.456-456
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    • 2010
  • CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.

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