• 대한토목학회논문집
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• 제30권4A호
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• pp.353-359
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• 2010

시멘트계 기질을 사용하는 복합재료는 재료 양생 과정에서 발생하는 건조수축 균열에 취약하다. 본 연구에서는 파이버 보강 콘크리트의 건조수축에 의한 파괴 거동을 시뮬레이션 하고, 파이버의 조건이 균열 특성에 미치는 영향에 대해 분석한다. 수치 해석 모델은 무작위 격자 형태의 기하학적 구조를 공유하는 관로 요소와 rigid-body-spring 요소로 구성되는데, 각 요소가 담당하는 비역학적-역학적 거동의 커플링에 의해 건조수축이 표현된다. 파이버 보강을 모델링하기 위해 rigid-bodyspring network 내부의 semi-discrete 파이버 요소를 적용하였다. KS F 2424 자유 건조수축 실험을 해석하고 시간에 따른 건조수축 변형률 변화를 비교함으로써 재료의 건조수축 관련 계수들을 산정한다. 다음으로 여러 파이버 혼입률에 대해 KS F 2595 구속 건조수축 실험을 시뮬레이션 하고 균열 발생 일자를 선행 실험 결과와 비교하여 해석 모델의 타당성을 검증한다. 또한, 파이버의 길이와 표면 형태를 변화시켜 건조수축 균열 해석을 수행하고 최대 균열 폭을 측정하여 시뮬레이션에서 나타나는 균열 제어 효과를 판단한다.

• 마이크로전자및패키징학회지
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• 제22권3호
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• pp.51-56
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• 2015

솔더 조인트의 신뢰성 강화를 위해서 다양한 pad finish material이 사용되고 있으며, 최근에는 Electroless Ni Electroless Pd Immersion Gold (이하 ENEPIG) pad가 많이 사용되고 있다. 따라서, 본 연구는 상용화 되어 사용중인 Electrolytic Ni (soft Ni) pad와 최근 이슈가 되고 있는 ENEPIG pad에 대한 신뢰성 평가에 관한 것으로, 다양한 Cu 함량에 따른 거동을 관찰 하였다. Reflow 후 솔더와 pad간의 접합층은 $Cu_6Sn_5$에 Ni이 치환된 형태의 금속간 화합물로 구성되어 있었으며, ENEPIG pad의 경우, 접합층과 Ni layer 사이에 $Ni_3P$ (dark layer) layer가 관찰 되었다. 또한, Cu 함량에 따라 Dark layer의 두께를 제어할 수 있었다. 충격 낙하 시험 후, 파괴모드를 관찰한 결과 soft Ni pad와 ENEPIG pad에서 서로 다른 파괴모드가 관찰 되었으며, soft Ni의 경우, 1차 IMC와 2차 IMC 경계에서 파괴가 관찰 되었고, ENEPIG pad의 경우, dark layer에서 파괴가 관찰 되었다. IMC와 pad material, bulk 솔더와의 lattice mismatch에 의해 불안정한 계면이 존재하며, 이는 연속적인 외부 충격에 의해 가해진 열적, 물리적 스트레스를 IMC 계면으로 전송하기 때문에, 솔더의 신뢰성 향상을 위해서는 솔더 벌크의 제어와 IMC의 두께 및 형상의 제어는 필요하다.

• 대한기계학회논문집
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• 제15권6호
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• pp.2037-2047
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• 1991

본 연구에서는 재료 결정격자의 기본단위나 결정립의 형상등 가장 기본적인 형태가 6각형이라는 점에 착안하여 취성재료의 파손모델로 부재들의 결손을 이용하는 결손확률모델을 제안하여 부재결손에 따른 각각의 파손 해석모델과 결손확률을 구한다. 그리고 비결손모델에서 구한 기본인장하중을 기초로 하여 해석하고자 하는 하중하에서 각각의 파손해석모델을 모델링하여 유한요소법으로 부재결손에 따른 요소중심에서의 최대주응력을 구하여 이론극한인장강도와의 비와 결손확률로 취성재료의 파손확률을 구한다. 또한 취성정도에 따른 균열길이에 대한 치수 매개변수를 구함으로써 재료강 도 연구에 기초가 되게 한다.

• Steel and Composite Structures
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• 제18권6호
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• pp.1391-1404
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• 2015

A radially retractable roof structure based on the concept of the hybrid grid shell is proposed in this paper. The single-layer steel trusses of the radially foldable bar structure are diagonally stiffened by cables, which leads to a single-layer lattice shell with triangular mesh. Then comparison between the static behavior between the retractable hybrid grid shell and the corresponding foldable bar shell with quadrangular mesh is discussed. Moreover, the effects of different structural parameters, such as the rise-to-span ratio, the bar cross section area and the pre-stress of the cables, on the structural behaviors are investigated. The results show that prestressed cables can strengthen the foldable bar shell with quadrangular mesh. Higher structural stiffness is anticipated by introducing cables into the hybrid system. When the rise-span ratio is equal to 0.2, where the joint displacement reaches the minimal value, the structure shape of the hyrbid grid shell approaches the reasonable arch axis. The increase of the section of steel bars contributes a lot to the integrity stiffness of the structure. Increasing cable sections would enhance the structure stiffness, but it contributes little to axial forces in structural members. And the level of cable prestress has slight influence on the joint displacements and member forces.

• Nuclear Engineering and Technology
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• 제51권2호
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• pp.356-368
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• 2019

This paper presents the verification and validation (V&V) of the STREAM/RAST-K 2.0 code system for a pressurized water reactor (PWR) analysis. A lattice physics code STREAM and a nodal diffusion code RAST-K 2.0 have been developed by a computational reactor physics and experiment laboratory (CORE) of Ulsan National Institute of Science and Technology (UNIST) for an accurate two-step PWR analysis. The calculation modules of each code were already verified against various benchmark problems, whereas this paper focuses on the V&V of linked code system. Three PWR type reactor cores, OPR-1000, three-loop Westinghouse reactor core, and APR-1400, are selected as V&V target plants. This code system, for verification, is compared against the conventional code systems used for the calculations in nuclear design reports (NDRs) and validated against measured plant data. Compared parameters are as follows: critical boron concentration (CBC), axial shape index (ASI), assembly-wise power distribution, burnup distribution and peaking factors. STREAM/RAST-K 2.0 shows the RMS error of critical boron concentration within 20 ppm, and the RMS error of assembly power within 1.34% for all the cycles of all reactors.

• 한국초전도ㆍ저온공학회논문지
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• 제18권1호
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• pp.37-40
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• 2016

We have investigated the addition effect of NiO magnetic nanoparticles on crystal structure, microstructure as well as superconducting properties of $MgB_2$. NiO-added $MgB_2$ samples were prepared by the solid-state reaction method. The superconducting transition temperature ($T_c$) of 37.91 K was obtained for pure $MgB_2$, and $T_c$ was found to decrease systematically on increasing the addition level of NiO. X-ray diffraction (XRD) analysis revealed that no substitution of Ni for Mg in the lattice of $MgB_2$ was occurred. The microstructural analysis shows that the pure $MgB_2$ sample consists of plate shape $MgB_2$ grains, and the grains get refined to smaller size with the addition of NiO nanoparticles. At 5 K, high values of critical current density ($J_c$) were obtained for small amount NiO-added $MgB_2$ samples as compared to pure sample. The enhancement in $J_c$ could be attributed to the refinement of $MgB_2$ grains which leads to high density of grain boundaries in NiO-added $MgB_2$ samples.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.

• Journal of Pharmaceutical Investigation
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• 제34권6호
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• pp.443-452
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• 2004

Habit is the description of the outer appearance of a crystal. If the environment of a growing crystal affects its external shape without changing its internal structure, a different habit results. Crystal habit and the internal structure of a drug can affect bulk and physicochemical properties, which range from flowability to chemical stability. A polymorph is a solid crystalline phase of a given compound resulting from the possibility of at least two different arrangements of the molecules of that compound in the solid state. Chemical stability and solubility changes due to polymorphism can have an impact on a drug's bioavailability and its development program. During crystallization from a solution, crystals separating may consist of a pure component or be a molecular compound. Solvates are molecular complexes that have incorporated the crystallizing solvent molecule in their lattice. When the solvent incorporated in the solvate is water, it is called a hydrate. To distinguish solvates from polymorphs, which are not molecular compounds, the term pseudopolymorph is used. Identification of possible hydrate compounds is important since their aqueous solubilities can be significantly less than their anhydrous forms. Conversion of an anhydrous compound to a hydrate within the dosage form may reduce the dissolution rate and extent of drug absorption. An amorphous solid may be treated as a supercooled liquid in which the arrangement of molecules is random. Amorphous solids lack the three-dimensional long-range order found in crystalline solids. Since amorphous forms are usually of higher thermodynamic energy than corresponding crystalline forms, solubilities as well as dissolution rates are generally greater. A study on crystal form includes characterization of (l)crystal habit, (2)polymorphism, (3)pseudopolymorphism, (4)amorphous solid.

• 열처리공학회지
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• 제4권1호
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• pp.13-18
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• 1991

The formation of high $T_c$ phase is very sluggish and c parameter of unit cell of high $T_c$ phase is about $37{\AA}$. High $T_c$ oxide superconductor with a $T_c$ above 100 K has been successfully prepared by solid state reaction method in BiSrCaCuO system by Pb adding. The microstructure related to the formation of the high $T_c$ phase has been investigated. As compared with YBCO compound, the formation reaction of the high $T_c$ requires long time heat treatment. It is due to the transformation from the low $T_c$ phase to high $T_c$ phase. The sintering just below the melting point of the calcined powder mixture is effective on the formation of the high $T_c$ phase in Pb-added BiSrCaCuO system. The growth of the high $T_c$ superconducting phase has a thin plate shape, which is characterized by the c parameter of $37{\AA}$. The formation of the high $T_c$ phases is delayed by the excessive addition of Pb. The lattice parameter(c) of the unit cell (both the low and high $T_c$ phases) is increased with increase of Pb.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).