• KSCE Journal of Civil and Environmental Engineering Research
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• v.30 no.4A
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• pp.353-359
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• 2010

Cementitious matrix based composites are vulnerable to the drying shrinkage crack during the curing process. In this study, the drying shrinkage induced fracture behavior of the fiber reinforced concrete is simulated and the effects of the fiber reinforcement conditions on the fracture characteristics are analysed. The numerical model is composed of conduit elements and rigid-body-spring elements on the identical irregular lattice topology, where the drying shrinkage is presented by the coupling of nonmechanical-mechanical behaviors handled by those respective element types. Semi-discrete fiber elements are applied within the rigid-body-spring network to model the fiber reinforcement. The shrinkage parameters are calibrated through the KS F 2424 free drying shrinkage test simulation and comparison of the time-shrinkage strain curves. Next, the KS F 2595 restrained drying shrinkage test is simulated for various fiber volume fractions and the numerical model is verified by comparison of the crack initiating time with the previous experimental results. In addition, the drying shrinkage cracking phenomenon is analysed with change in the length and the surface shape of the fibers, the measurement of the maximum crack width in the numerical experiment indicates the judgement of the crack controlling effect.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.51-56
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• 2015

It has been used various pad finish materials to enhance the reliability of solder joint and recently Electroless Ni Electroless Pd Immersion Gold (the following : ENEPIG) pad has been used more than others. This study is about reliability according to being used in commercial Electrolytic Ni pad and ENEPIG pad, and was observed behavior of various Cu contents. After reflow, the inter-metallic compound (IMC) between solder and pad is composed of $Cu_6Sn_5$ (Ni substituted) by using EDS, and in case of ENEPIG, between IMC and Ni layer was observed the dark layer ($Ni_3P$ layer). Additional, it could be controlled the thickness of dark layer according to Cu contents. Investigated the different fracture mode between electrolytic Ni and ENEPIG pad after drop shock test, in case of soft Ni, accelerated stress propagated along the interface between $1^{st}$ IMC and $2^{nd}$ IMC, and in case of ENEPIG pad, accelerated stress propagated along the weaken surface such as dark layer. The unstable interface exists through IMC, pad material and solder bulk by the lattice mismatch, so that the thermal and physical stress due to the continuous exterior impact is transferred to the IMC interface. Therefore, it is strongly requested to control solder morphology, IMC shape and thickness to improve the solder reliability.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.6
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• pp.2037-2047
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• 1991

Strength is not simply a single given value but rather is a statistical one with certain distribution functions. This is because it is affected by many unknown factors such as size, shape, stress distribution, and combined stresses. In this study, a model of loss probability is proposed in view of the fact that one of the fundamental configuration of nature is hexagonal, for example, the shapes of lattice unit, grain, and so on. The model sues the concept of loss of certain element in place of Jayatilaka-Trustrum's length and angle of cracks. Using this model, the loss probability due to each loss of certain elements is obtained. Then, the maximum principal stress is calculated by the finite element method at the centroid of the elements under the tensile load for the 4,095 models of analysis. Finally, the failure probability of the brittle materials is obtained by multiplying the loss probability by the ratio of the maximum principal stress to theoretical tensile strength. Comparison of the result of the Jayatilaka-Trustrum's model and the proposed model shows that the failure probabilities by the two methods are in good agreement. Further, it is shown that the parametric relationship of semi-crack lengths for various degrees of birittleness can be determined. Therefore, the analysis of the failure probability suing the proposed model is shown to be promising as a new method for the study of the failure probability of birttle materials.

• Steel and Composite Structures
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• v.18 no.6
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• pp.1391-1404
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• 2015

A radially retractable roof structure based on the concept of the hybrid grid shell is proposed in this paper. The single-layer steel trusses of the radially foldable bar structure are diagonally stiffened by cables, which leads to a single-layer lattice shell with triangular mesh. Then comparison between the static behavior between the retractable hybrid grid shell and the corresponding foldable bar shell with quadrangular mesh is discussed. Moreover, the effects of different structural parameters, such as the rise-to-span ratio, the bar cross section area and the pre-stress of the cables, on the structural behaviors are investigated. The results show that prestressed cables can strengthen the foldable bar shell with quadrangular mesh. Higher structural stiffness is anticipated by introducing cables into the hybrid system. When the rise-span ratio is equal to 0.2, where the joint displacement reaches the minimal value, the structure shape of the hyrbid grid shell approaches the reasonable arch axis. The increase of the section of steel bars contributes a lot to the integrity stiffness of the structure. Increasing cable sections would enhance the structure stiffness, but it contributes little to axial forces in structural members. And the level of cable prestress has slight influence on the joint displacements and member forces.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.356-368
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• 2019

This paper presents the verification and validation (V&V) of the STREAM/RAST-K 2.0 code system for a pressurized water reactor (PWR) analysis. A lattice physics code STREAM and a nodal diffusion code RAST-K 2.0 have been developed by a computational reactor physics and experiment laboratory (CORE) of Ulsan National Institute of Science and Technology (UNIST) for an accurate two-step PWR analysis. The calculation modules of each code were already verified against various benchmark problems, whereas this paper focuses on the V&V of linked code system. Three PWR type reactor cores, OPR-1000, three-loop Westinghouse reactor core, and APR-1400, are selected as V&V target plants. This code system, for verification, is compared against the conventional code systems used for the calculations in nuclear design reports (NDRs) and validated against measured plant data. Compared parameters are as follows: critical boron concentration (CBC), axial shape index (ASI), assembly-wise power distribution, burnup distribution and peaking factors. STREAM/RAST-K 2.0 shows the RMS error of critical boron concentration within 20 ppm, and the RMS error of assembly power within 1.34% for all the cycles of all reactors.

• Progress in Superconductivity and Cryogenics
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• v.18 no.1
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• pp.37-40
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• 2016

We have investigated the addition effect of NiO magnetic nanoparticles on crystal structure, microstructure as well as superconducting properties of $MgB_2$. NiO-added $MgB_2$ samples were prepared by the solid-state reaction method. The superconducting transition temperature ($T_c$) of 37.91 K was obtained for pure $MgB_2$, and $T_c$ was found to decrease systematically on increasing the addition level of NiO. X-ray diffraction (XRD) analysis revealed that no substitution of Ni for Mg in the lattice of $MgB_2$ was occurred. The microstructural analysis shows that the pure $MgB_2$ sample consists of plate shape $MgB_2$ grains, and the grains get refined to smaller size with the addition of NiO nanoparticles. At 5 K, high values of critical current density ($J_c$) were obtained for small amount NiO-added $MgB_2$ samples as compared to pure sample. The enhancement in $J_c$ could be attributed to the refinement of $MgB_2$ grains which leads to high density of grain boundaries in NiO-added $MgB_2$ samples.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.

• Journal of Pharmaceutical Investigation
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• v.34 no.6
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• pp.443-452
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• 2004

Habit is the description of the outer appearance of a crystal. If the environment of a growing crystal affects its external shape without changing its internal structure, a different habit results. Crystal habit and the internal structure of a drug can affect bulk and physicochemical properties, which range from flowability to chemical stability. A polymorph is a solid crystalline phase of a given compound resulting from the possibility of at least two different arrangements of the molecules of that compound in the solid state. Chemical stability and solubility changes due to polymorphism can have an impact on a drug's bioavailability and its development program. During crystallization from a solution, crystals separating may consist of a pure component or be a molecular compound. Solvates are molecular complexes that have incorporated the crystallizing solvent molecule in their lattice. When the solvent incorporated in the solvate is water, it is called a hydrate. To distinguish solvates from polymorphs, which are not molecular compounds, the term pseudopolymorph is used. Identification of possible hydrate compounds is important since their aqueous solubilities can be significantly less than their anhydrous forms. Conversion of an anhydrous compound to a hydrate within the dosage form may reduce the dissolution rate and extent of drug absorption. An amorphous solid may be treated as a supercooled liquid in which the arrangement of molecules is random. Amorphous solids lack the three-dimensional long-range order found in crystalline solids. Since amorphous forms are usually of higher thermodynamic energy than corresponding crystalline forms, solubilities as well as dissolution rates are generally greater. A study on crystal form includes characterization of (l)crystal habit, (2)polymorphism, (3)pseudopolymorphism, (4)amorphous solid.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.1
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• pp.13-18
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• 1991

The formation of high $T_c$ phase is very sluggish and c parameter of unit cell of high $T_c$ phase is about $37{\AA}$. High $T_c$ oxide superconductor with a $T_c$ above 100 K has been successfully prepared by solid state reaction method in BiSrCaCuO system by Pb adding. The microstructure related to the formation of the high $T_c$ phase has been investigated. As compared with YBCO compound, the formation reaction of the high $T_c$ requires long time heat treatment. It is due to the transformation from the low $T_c$ phase to high $T_c$ phase. The sintering just below the melting point of the calcined powder mixture is effective on the formation of the high $T_c$ phase in Pb-added BiSrCaCuO system. The growth of the high $T_c$ superconducting phase has a thin plate shape, which is characterized by the c parameter of $37{\AA}$. The formation of the high $T_c$ phases is delayed by the excessive addition of Pb. The lattice parameter(c) of the unit cell (both the low and high $T_c$ phases) is increased with increase of Pb.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).