• Journal of the Korean Geophysical Society
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• v.3 no.1
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• pp.57-66
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• 2000

The location and geometry of the Ulsan Fault play important roles in interpreting tectonic evolution of the southeastern part of the Korean Peninsula. Dipole-dipole electrical resistivity surveys and seismic refraction surveys were carried out in the Yaksoo area, Ulsan in order to measure the thickness of the alluvium covering the Ulsan Fault and to find associated fracture zones and possibly the location of its major fault plane. The collected data were analyzed and interpreted. Some results reported previously by others were also used in this interpretation. No low resistivity anomalies were found in the cross-sectional resistivity image of the survey line located in the east of the Dong River. In contrast, well-developed continuous low resistivity anomalies were detected in the west of the Dong River. This strongly suggests that the major fault plane of the Ulsan Fault is located under or in the west part of the Dong River. Two refraction boundaries corresponding to the underground water level and the bottom of the alluvium were found by refraction surveys carried out on the limited part of the east survey line. The thickness of the alluvium was found to be about 30 m. Small faults in the basement rock identified by reflection surveys were not detected by both resistivity and refraction seismic surveys. This might be explained by assuming that low resistivity anomaly is more closely related to the clay contents than the water contents. On the other hand, it may be resulted by the limited resolution of the resistivity and refraction surveys. Detailed study is required to clarify the reason. Resistivity survey is frequently considered to be a good exploration method to detect subsurface faults. However, it appears to be less useful than reflection seismic survey in this work. In dipole-dipole resistivity survey, the number of separation should be increased to survey deeper subsurface with the same resolution. However, signal to noise ratio decreases as the number of separation increases. In this survey area, the signal to noise ratio of up to sixteen separations was good enough based on the statistical properties of measurements.

• Applied Microscopy
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• v.38 no.4
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• pp.279-284
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• 2008

The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.52-57
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• 2010

Although chemical sedimentation and ion exchange are usually applied to the treatment of heavy metal ions and radioactive cations, they have some serious disadvantages like a great consumption of chemicals, the disposal of valuable metals, and the secondary pollution of soil by the solid-waste. The advanced countries recently have studied the electrochemical ion exchange, combined electrochemical reduction and ion exchange, for the development of the alternative technique. This study has been performed to investigate the optimum condition for the preparation of the nickel hexacyanoferrate (NiHCNFe) which is an electrochemical ion exchanger. NiHCNFe film was deposited on the surface of nickel plate by chemical method or electrochemical method. The morphology and composition of NiHCNFe were observed by SEM and EDS, respectively. The peak current density of NiHCNFe was measured from the cyclic voltammograms of the continuous oxidation-reduction reaction in a parallel plane ion exchange electrode reactor. It was found that the chemical preparation method was better than the electrochemical method. The concentrated NiHCNFe was apparently deposited on nickel plate when dipping in the preparing solution for 118 h, especially. It also had a best durable performance as an ion exchange electrode.

• The Journal of Korean Academy of Prosthodontics
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• v.17 no.1
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• pp.7-21
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• 1979

This investigation was to analyse normal protrusive and lateral condylar pantographic records written on the sagittal plane and to study components of Fisher's angle and their interrelations. The purpose of this study was limited to (1) discussing the significance of sagittal pantographic record in diagnosis of occlusal disease and(2) basing for reasoning validity of measuring Fisher's angle which has been reported so far. As a result followings were concluded. 1. In each protrusive and lateral condylar movement path, five complicate factors such as initial straightness, distributed simple sigmoid type, simple curvature, initial tiny protruding convexity and tiny repeated sigmoid patterns were noted. Generally each condylar movement path was composed of two to three of these factors. 2. The distribution of positional interrelations of protrusive and lateral condylar paths could be divided into five categories; (a) protrusive-upper, (b) completely coinciding, (c) partially initial coinciding, (d) partially inverted crossing, and (e) completely inverting. Among these, protrusive path-upper positioned condyles were prevailed (79.2%). 3. The distribution of interrelations of protrusive and lateral condylar paths could be devided into five categories according to their distances in the course of movement. Among these, opening (95.8%) and paralleling (66.7%) were prevailing. 4. The involved number of characteristic heterogenous patterns of five categories in protrusive and lateral condylar movement recording relations at one simultaneous recordings was limited to three. However, in case of homogeneous patterns were repeated, usually three to four were included. 5. The maximum distance between protrusive and lateral condylar paths was 1.45mm at the location of 4mm advanced position from centric relation point and 3.90mm at the location of protrusive movement terminal. 6. It seemed to be that ,pantographic records should be consulted other clinical symptoms in order to make certain occlusion diagnosis. 7. At the present moment of investigation, expressing Fisher's angle as a degree revealed a lack due to inherent complexity of protrusive and lateral condylar movement paths. 8. The typical pattern of protrusive and lateral condylar paths written on a pantographic sagittal plate might be described as follows; (a) protrusive condylar path should be positioned upwardly, (b) both mainly be simple curvature, (c) interrelations mainly be opening or paralleling. 9. The mean amounts of separation between protrusive and lateral condylar movement path were $0.75{\pm}0.46$ at 4mm advanced location from centric relation and $1.74{\pm}0.64mm$ at the location of protrusive path terminal.

• Journal of the Mineralogical Society of Korea
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• v.28 no.2
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• pp.127-133
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• 2015

Li-bearing muscovite is commonly found along with trioctahedral lepidolite in granitic pegmatites. Structurally, $Li^+$ ions can replace $K^+$ ions in the interlayer (Int) of muscovite or incorporate into vacancies of the dioctahedral sheet (Sub). However, detailed mechanism of the lithium incorporation into muscovite is challenging to investigate using experimental techniques alone. In the current study, density functional theory (DFT) has been applied to examine the crystal structure and energy variation when $Li^+$ resides in the interlayer or the octahedral sheet. Depending on the position of $Li^+$ (i.e., Int vs. Sub), DFT showed significant differences in the mica's structures such as lattice parameters, sheet thickness, interlayer separation, and OH angles with respect to the ab plane. DFT further showed that, in pure muscovite, $Li^+$ has a lower energy when it is located in Int than Sub. By contrast, in the case of $Fe^{2+}$ substitution into the octahedral sheet, $Li^+$ has a lower energy in Sub than in Int. These results imply that $Li^+$ incorporates into the Al octahedral sheets only when the octahedral sheets possess structural charges, suggesting cation substitution in the octahedral sheets plays an important role in the Li incorporation mechanism into muscovite. They can also explain the experimental observation about the positive relationship between $Fe^{2+}$ and $Li^+$ amounts in Li-bearing muscovite.

• Journal of Satellite, Information and Communications
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• v.10 no.2
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• pp.80-85
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• 2015

In this paper, we present, an indstrial RFID layered microstrip patch antenna is designed using an inset feed method in order to improve recognition rates in a long distance as tags are attached to metal object by improving a problem of feeding power in fabricating metal tags and reducing effects of metallic object. The inset feed shows a distinctive characteristic that has no separation between emitters and feed lines differing from a structure with the conventional inductive coupling feed. This structure makes possible to produce a type that presents a low antenna height and enables impedance coupling for tag chips. Although it shows a difficulty in the impedance coupling due to increases in the parasite capacitance between a ground plane and an emitter in an antenna according to decreases in the height of a tag antenna, it may become a merit in designing the tag antenna because the antenna impedance can be determined as an inductive manner if a shorted structure is used for feeding power. Therefore, in this paper the microstrip patch antenna is designed as a modified type and applies the inset feed in order to reduce effects of metallic objects where the antenna is be attached. Also, the antenna uses a multi-layer structure that includes a metal plate between radiator and ground instead of using a single layer.

• The Journal of Natural Sciences
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• v.8 no.2
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• pp.119-127
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• 1996

The effect of sodium hydroxide treatment on some physicochemical properties of zeolite mordenite mineral was studied with chemical analyses, powder X-ray diffraction, thermal analyses, infrared analysis, measurement of carbon dioxide adsorption and gas chromatography. Mordenite mineral from tuffaceous rocks in Yeongil and Wolsung area was used as a starting material and treated with 0.1-5N NaOH aqueous solution at about $95^{\circ}C$ in the water bath for three hours.At the concentration of sodium hydroxide below 0.5N, all chemical compositions in the tuff were virtually insoluble and the mordenite structure did not change. At the concentration above 1N, the chemical compositions such as silica, alumina, etc., were dissolved. The dissolution ratio of silica was lager than that of alumina, and the ratio of silica to alumina in the tuff decreased sharply in the concentration range of 2 to 3N. Intensity of X-ray diffraction peak of mordenite (202) plane and the adsorbed amount of carbon dioxide also decreased with the increasing concentration of sodium hydroxide above 1N. These decreases corresponded to the degree of mordenite structure collapsed.The separation of gas chromatography of nitrogen, oxygen and carbon monoxide was not affected by the sodium hydroxide treatment, but elution peaks of methane and krypton tended to be broadened and their retention time was shortened. The elution peaks of both methane and krypton tended to be overlapped with those of nitrogen and oxygen.

• Current Optics and Photonics
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• v.1 no.2
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• pp.107-112
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• 2017

An adaptive optics system can be simulated or analyzed to predict its closed-loop performance. However, this type of prediction based on various assumptions can occasionally produce outcomes which are far from actual experience. Thus, every adaptive optics system is desired to be tested in a closed loop on an optical test bench before its application to a telescope. In the close-loop test bench, we need an atmospheric simulator that simulates atmospheric disturbances, mostly in phase, in terms of spatial and temporal behavior. We report the development of an atmospheric turbulence simulator consisting of two point sources, a commercially available deformable mirror with a $12{\times}12$ actuator array, and two random phase plates. The simulator generates an atmospherically distorted single or binary star with varying stellar magnitudes and angular separations. We conduct a simulation of a binary star by optically combining two point sources mounted on independent precision stages. The light intensity of each source (an LED with a pin hole) is adjustable to the corresponding stellar magnitude, while its angular separation is precisely adjusted by moving the corresponding stage. First, the atmospheric phase disturbance at a single instance, i.e., a phase screen, is generated via a computer simulation based on the thin-layer Kolmogorov atmospheric model and its temporal evolution is predicted based on the frozen flow hypothesis. The deformable mirror is then continuously best-fitted to the time-sequenced phase screens based on the least square method. Similarly, we also implement another simulation by rotating two random phase plates which were manufactured to have atmospheric-disturbance-like residual aberrations. This later method is limited in its ability to simulate atmospheric disturbances, but it is easy and inexpensive to implement. With these two methods, individually or in unison, we can simulate typical atmospheric disturbances observed at the Bohyun Observatory in South Korea, which corresponds to an area from 7 to 15 cm with regard to the Fried parameter at a telescope pupil plane of 500 nm.

• Journal of the Korean Geotechnical Society
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• v.34 no.11
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• pp.57-70
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• 2018

In this study, verification of the nonlinear effective stress analysis is performed for introducing performance based earthquake resistance design of port and harbor structures. Seismic response of gravitational caisson quay wall in numerical analysis is compared directly with dynamic centrifuge test results in prototype scale. Inside of the rigid box, model of the gravitational quay wall is placed above the saturated sand layer which can show the increase of excess pore water pressure. The model represents caisson quay wall with a height of 10 m, width of 6 m under centrifugal acceleration of 60 g. The numerical model is made in the same dimension with the prototype scale of the test in two dimensional plane strain condition. Byrne's liquefaction model is adopted together with a nonlinear constitutive model. Interface element is used for sliding and tensional separation between quay wall and the adjacent soils. Verification results show good agreement for permanent displacement of the quay wall, horizontal acceleration at quay wall and soil layer, and excess pore water pressure increment beneath the quay wall foundation.