• The Korean Journal of Pesticide Science
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• v.3 no.2
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• pp.69-73
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• 1999

The insecticidal activities and residues of chlorfenapyr [4-bromo-2-(4-chlorophenyl)-1-ethoxymethyl-5-trifluorornethyl pyrrole-3-carbonitrile] against Thrips palmi was evaluated under laboratory and vinyl house conditions. Effectiveness of chlorfenapyr against T. palmi on red pepper leaves was lasted for 9 days at a concentration of 50 ppm but there was no significant differences between emulsifiable concentration and wettable granule under laboratory conditions. In vinyl house, high toxicity was investigated at 6 hours after application of chlorfenapyr in a concentration of 50 and 100 ppm and insecticidal effect was maintained for 11days after 2 times weekly application in cucumber. Control effect was above 97% against T. palmi larva and larva+adults after 2 times weekly application in vinyl house.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.6
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• pp.367-374
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• 2000

This paper presents a method to fabricate freestanding structures by (100) silicon anisotropic etching and nickel electroless plating. The electroless plating process is simpler than the electroplating, and provides good coating uniformity and improved mechanical properties. Furthermore, the (100) silicon anisotropic etching in KOH solution with being aligned to <100> direction provides vertical (100) sidewalls on etched (100) surface. In this paper, the effects of the nickel electroless plating condition on the properties of electroless plated metal structures are investigated to apply fabrication of micro structures and then various micro structures are fabricated by nickel electroless plating. And then, the structures are released by silicon anisotropic etching in KOH solution with a large gap between the structure and the substrate. The fabricated cantilever structures are $210\mum$. wide, $5\mum$. thick and $15\mum$. over the silicon substrate, and the comb structure has the comb electrodes which are $4\mum$. wide and $4.3\mum$. thick separated by$1\mum$. It is released by silicon anisotropic etching in KOH solution. The gap between the structure and the substrate is $2.5\mum$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.275-275
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• 2007

Two sorts of electrode composed of Sulpur/CNT/PVDF and Silver/CNT/PVDF were prepared by in situ chemical method and their electrochemical performance were evaluated by using cyclic voltammetry, impedance measurement and constant-current charge/discharge cycling technique. Also, composite electrodes were characterized by FE-SEM and BET. Raw materials such as CNT/Silver and CNT/Sulfur were mixed in ethanol, dried. These mixed materials were heated at 900 and $320^{\circ}C$ for 2hr, respectively in order to enhance contact among CNT electrodes. Electric double layer capacitor cells were fabricated using these mixed powder with polymer of PVDF. For the charging and discharging characteristics measured at scan rate of 1 mA/s, Supercapacitor of Sulphur-CNT-PVDF electrode showed a better performance than that of Ag-CNT-PVDF, which seems to be related with lower contact resistance of Sulphur-CNT-PVDF electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.181-181
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• 2007

PTCR 세라믹스를 적층형 부품으로 제조할 경우 소형화, 저 저항화 및 과전류 유입 시 빠른 응답특성을 갖는다는 장점을 가지고 있으며, 이러한 적층형 부품제조시에는 내부전극재가 부품소자의 물성에 중요한 영향을 미친다. 특히 우수한 옴성 접촉(Ohmic Contact)을 갖는 Zn, Fe, Sn, Ni 등의 적층 PTC용 전극재는 높은 산화특성으로 인해 재산화 과정에서의 비옴성 접촉(Non-ohmic contact)을 갖게 되어 PTC 특성을 저하시킬 우려가 있다. 따라서 본 연구에서는 적층형 PTCR 세라믹스의 내부전극재와 반도체 세라믹층의 동시소성거동 및 적층 PTCR 세라믹스의 전기적 특성을 평가하였다. 본 연구에 적용된 내부전극재로는 Ni 전극을 사용하였고, Ni 전극용 paste로는 무공제 paste, 반도체 세라믹공제 paste, $BaTiO_3$ 공제 paste의 3종 전극재가 이용되었다. 적층형 PTCR 세라믹스의 제조공정은 테이프 캐스팅(Tape casting), 내부전극인쇄, 적층 및 동시소성을 포함하는 적층화공정을 적용하였다. 각각의 전극 paste를 적용하여 제조된 chip은 미세구조관찰, I-V특성, R-T특성 등을 평가하여 내부전극내 세라믹공제의 영향을 고찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.288-288
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• 2007

본 연구에서 내환원성 $BaTiO_3$의 PTCR(Positive Temperation Coefficient Resistance) 특성 및 미세구조에 대한 분쇄 및 출발 원료들의 하소 조건의 영향을 연구하였다. $BaCO_3$, $TiO_2$, $CeO_2$를 Attrition milling 하여 1차 혼합 및 분쇄한 후 건조하여 혼합분말을 얻었으며, $(Ba_{1-x}Ce_x)TiO_3$를 합성하기 위하여 $1000^{\circ}C{\sim}1200^{\circ}C$ 공기중에서 하소하였다. 각 하소온도에서 제조한 $(Ba_{1-x}Ce_x)TiO_3$에 첨가제를 2차 혼합하고 초미분쇄하여 분말을 제조하였다. 직경 5mm 의 시편을 제조하여 환원 및 재산화 분위기에서 소결을 한 후 상온저항값 및 R-T특성을 측정하였고 SEM 을 통해 미세구조를 관찰하였다. 또한 하소 후 온도에 따른 상분석을 XRD를 통하여 분석하였다. 그 결과 하소온도가 증가함에 따라 상온저항값은 감소하는 경황을 보였으며 PTC특성은 감소하다가 증가하는 경향을 보였다. 초미분쇄에 따른 입자크기는 $1{\mu}m$이하로 작아졌으며 미립화가 됨에 따라 하소/소결온도에 앙향을 줄 것으로 사료된다.

• The Journal of Korea Assosiation for Disability and Oral Health
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• v.15 no.1
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• pp.89-93
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• 2019

Preterm infants have higher possibility of undergoing endotracheal intubation after birth than normal children due to medical conditions. Developmental disturbances of primary incisors following intubation can occur as crown malformation, enamel defects, delayed eruption, displacement of dental follicle in crypt, groove formation of palate or alveolar ridge, acquired cleft palate, and dental arch distortion. This clinical report presents the effect of intubation on primary dentition of preterm infants. A 2-year-old girl with cerebral palsy and premature birth history visited our clinic with chief complaint of unerupted primary upper incisor. A 1-year-old boy with cerebral palsy, status epilepticus and premature birth history visited our clinic due to crown malformation. Developmental disturbances of primary incisors in these cases were not related to the patients' systemic disease, and there were no history of dental trauma. A long term endotracheal intubation prior to tooth eruption might have caused local trauma on alveolar ridge. It is very important to monitor dental problems of preterm infants who had experienced endotracheal intubation during neonatal period. Due to influences on both primary and permanent teeth, periodic re-evaluation of affected areas and establishment of comprehensive treatment plans are necessary.

• Korean Journal of Metals and Materials
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• v.49 no.6
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• pp.493-497
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• 2011

The basic properties and electrical characteristics of sputtering films deposited with a commercial cast target and spark plasma sintering (SPS) were compared and analyzed. The results, revealed that, the Al film prepared by heating at $60^{\circ}C/min$ (SPS process) showed a specific resistance similar to the commercial cast Al film. In addition, the results of XRD, SIMS and TEM, showed that there was not much difference in the crystal structure and impurities between the two films. Consequently, the SPS Al target was found to have properties quite similar to the commercial one and it is expected to be applied in future research to the metal wiring material for semiconductor/display devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.63-68
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• 2007

A number of process problems should be solved in the multi-layered ceramic devices such as EMI filter. In particular, it is essential to control the sintering shrinkage in co-firing of different materials for obtaining defect-free samples such as crack, camber, and delamination which usually occur near the surface and interface. We studied the effect of the powder properties of ferrite on the co-firing behavior of green ceramic layers composed of ferrite and varistor. Three kind of ferrite powder samples as a function of milling time (24, 48, and 72 hr) were prepared. Varistor and ferrite ceramic green sheet were made by means of doctor blade process using slurry (ceramic powder and binder solution). Here, slurry was prepared by mixing 55 wt% powder with 45wt% binder solution. Varistor and ferrite green sheets were laminated at $80 kg/cm^2$, and co-fired at $900^{\circ}C$ and $1000^{\circ}C$ for 3 hr. We obtained the camber-free and co-fired ferrite/varistor layer structure by controlling the milling time and sintering temperature.

• Journal of Periodontal and Implant Science
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• v.35 no.3
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• pp.597-608
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• 2005

The aim of this study is to determine whether full-mouth disinfection therapy(FMT) in our clinical setting would show better improvement of clinical parameters than partial mouth disinfection therapy(PMT) in chronic periodontitis and aggressive periodontitis patients. Among 12 patients, 6 were treated FMT and other 6 were treated PMT. Clinical parameters were calculated 3 months and 6 months after initial therapy. 1. There were no statistically significant differences between FMT and PMT in the reduction rate of bleeding on probing after 3 months, 6 months 2. Initial probing depth was 4-6mm, the mean probing depth after 3 months was 2.2mm vs 2.5mm(FMT vs PMT), after 6 months was 2.4mm vs 2.8mm. This was significantly lower in the FMT groups. 3. Initial probing depth was ${\geqq}$ 7mm, the reduction rate of mean probing depth during first 3 months was 4.8mm vs 4.1mm(FMT vs PMT), and 3 to 6 months was 0.5mm vs 0.3mm. This was significantly larger in the FMT groups. 4. Initial probing depth was 4-6mm, the mean clinical attachment level after 3 months was 2.3mm vs 2.7mm(FMT vs PMT), after 6 months was 2.7mm vs 3.0mm. This was significantly lower in the FMT groups. 5. Initial probing depth was ${\geqq}$ 7mm, the reduction rate of mean probing depth during first 3 months was 4.0mm vs 3.0mm(FMT vs PMT), and 3 to 6 months was 0mm vs -0.1mm. This was significantly larger in the FMT groups. Although the results provided us with succeccful clinical improvement in aggressive periodontitis, further research is needed to prove its additional benefit in the treatment of chronic periodontitis

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.28-34
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• 1999

We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.