• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.278-284
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• 1995

Thin fihn SnO$_{2}$ Gas Sensor was fabricated by electron-beam evaporation system and the target made by general firing method for the purpose of detecting gas components in air, especially methane gas. SnO$_{2}$ thin film was prepared on the polished alumina substrate which Pt interdigital electrode was precoated. The effects of annealing temperature and substrate temperature on the structural properties of SnO$_{2}$ thin film on glass were investigated using the X-ray diffraction. The good crystalline structure is formed when substrate temperature is 150[.deg. C] and annealing condition is 550[.deg. C], 1[hour]. And the sensing properties at various thickness of the SnO$_{2}$ thin film and the effects of PdCI$_{2}$ addition were also investigated. The good result is showed when the thickness is below 1000[.angs.] and the quantity of PdCI$_{2}$ addition is 4[wt%]. The thickness of SnO$_{2}$ thin film was measured by .alpha.-step and Elliopsometer.

• 센서학회지
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• 제27권1호
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• 한국항행학회논문지
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• 제23권1호
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• pp.69-76
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• 2019

본 논문에서는 평면 유전체 기판의 유전율 측정을 위해 마이크로스트립 결함 접지구조를 기반으로 한 고감도 마이크로파 센서의 설계 방법에 대하여 연구하였다. 제안된 센서는 H-모양 개구의 리지 구조를 커패시터 기호 모양으로 변형하여 설계하였다. 제안된 센서의 감도를 기존의 이중 링 상보형 분할 링 공진기를 기반으로 한 센서의 감도와 비교하였다. 두 센서는 피 시험 기판이 없는 상태에서 전송 계수가 1.5 GHz에서 공진하도록 0.76 mm 두께의 RF-35 기판 상에 설계하고 제작하였다. 피 시험 기판으로 비유 전율이 2.17에서 10.2 범위에 있는 타코닉 기판 5종을 선택하였다. 실험 결과, 전송계수 공진주파수의 이동으로 측정된 제안된 센서의 감도는 기존 이중 링 상보형 분할 링 공진기를 기반으로 한 센서와 비교할 때 1.31배에서 1.62배 증가하는 것을 확인하였다.

• 센서학회지
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• 제19권6호
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• pp.497-503
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• 2010

This paper reports a chemomechanical explosive sensor based on a thin polymer membrane. The sensor consists of thin parylene membrane and electrodes. Parylene membrane is functionalized with 4-mercaptophenol which interacts strongly with nitrotoluene based explosives. The membrane deflection caused by molecular interaction between the surface and explosives is monitored by capacitance between the membrane and the substrate. To measure the capacitance, electrodes are formed on the membrane and the substrate. While the previous cantilever system requires a bulky optical measuring system, this purely electric monitoring method offers a compact and effective system. Thus, this explosive sensor can be readily miniaturized and used in the field. The developed sensor can reliably detect dinitrotoluene and its limit of detection is evaluated as approximately 110 ppb.

• 제어로봇시스템학회논문지
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• 제17권2호
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• pp.131-134
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• 2011

In this study, we propose an optimal design and new fabrication method for a slim tactile sensor. Slim tactile sensor can detect 3-axial forces and has suitable flexibility for intelligent robot fingers. To amplify the contact signal, a unique table-shaped structure was attempted. A new layer-by-layer fabrication process for polymer micromachining that can make a 3D structure by using a sacrificial layer was proposed. A table-shaped epoxy sensing plate with four legs was built on top of a flexible polymer substrate. The plate can convert an applied force to a concentrated stress. Normal and shear forces can be detected by combining responses from metal strain gauges embedded in the polymer substrate. The optimal positions of the strain gauges are determined using the strain distribution obtained from finite element analysis.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.184-188
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• 2006

This work describes efforts in the fabrication and testing of robust microelectromechanical systems (MEMS). Robustness is typically achieved by investigating non-silicon substrates and materials for MEMS fabrication. Some of the traditional MEMS fabrication techniques are applicable to robust MEMS, while other techniques are drawn from other technology areas, such as electronic packaging. The fabrication technologies appropriate for robust MEMS are illustrated through laminated polymer membrane based pressure sensor arrays. Each array uses a stainless steel substrate, a laminated polymer film as a suspended movable plate, and a fixed, surface micromachined back electrode of electroplated nickel. Over an applied pressure range from 0 to 34 kPa, the net capacitance change was approximately 0.14 pF. An important attribute of this design is that only the steel substrate and the pressure sensor inlet is exposed to the flow; i.e., the sensor is self-packaged.

• 센서학회지
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• 제19권6호
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• pp.475-482
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• 2010

Rogowski coil which detects magnetic flux on current changes. It is used for digital integration with watt-hour meter's current sensor, because, Rogowski coil has non-cored or non-magnetic core structure, so that, it cannot be saturated magnetically. This is a study for inventing accurate electric current sensors that have been applied on multi-layer ceramic substrate. We have confirmed its properties from each different layer's materials and pattern sizes by MWS 3D Electromagnetic field analysis program. And, after sensor manufacturing on multi-layer ceramic substrate, we confirmed its sensing quality is reliable as accurate electric current sensor for watt-hour meter.

• 한국안전학회지
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• 제19권3호
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• pp.51-56
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• 2004

Conductive polymer blends and composites are widely used for different safety application such as electrostatic charge dissipation(ESD), electromagnetic interference(EMI) shielding, electrostatic prevention and safety chemical sensor. In order to prepare a impedance-type humidity sensor that is durable at high humidities and high temperature, electically conductive polymer blends based on diallyldimethylammonium chloride(DADMAC) and epoxy were prepared in this study. The polymer blends type conductive ionomer exhibits reaction each other DADMAC and epoxy in FT-IR and DSC analysis. The blends material was traced by new peak at 1600cm-1 and appeard improvement of thermal resistance by melting point shift. Alumina substrate was deposited a pair of gold electrodes by screen printing. The blend material were spin-coated with a thin film type on the surface of alumina substrate. The polymer bleld type sensor exhibits a linear impedance increasing better than DADMAC coated humidity sensor. Also it shows good sensitivity, low hysteresis and durability against high humidity.

• 센서학회지
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• 제26권2호
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• pp.91-95
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• 2017

Recently, infrared (IR) spectrometers have been required in various fields such as environment, safety, mobile, automotive, and military. This IR dispersive sensor detection method of substances is widely used. In this study, we fabricated a silicon (Si) prism-based near infrared (NIR) spectrometer utilizing micro electro mechanical system (MEMS) technology. Si prism-based NIR spectrometer utilizing MEMS technology consists of upper, middle, and lower substrates. The upper substrate passes through the incident IR ray selectively. The middle substrate, acting as a prism, disperses and separates the incident IR beam. The lower substrate has an amorphous Si (a-Si)-based bolometer array to detect the IR spectrum. The fabricated Si prism-based NIR spectrometer utilizing MEMS technology has the advantage of a simple structure, easy fabrication steps, and a wide NIR region operating range.

• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.