• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Journal of the Korea Society for Simulation
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• v.15 no.3
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• pp.49-60
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• 2006

We propose a method to use a state transition model so that the sensing object can be distinguished through classification of signal patterns sensed by a sensor array. Focusing on the design of the model that is able to distinguish the sensed object more exactly, we present an idea in which the modeling elements, 'states' and 'transitions' are defined as each same-sized angle intervals into which the angle interval $(-\frac{\pi}{2},\frac{\pi}{2})$ is divided and the angle differences between adjacent signal values on sampling signal value sequence value sequence sensed from the sensor array in the uniform time interval, respectively. In addition we show the usefulness of our model through experiments.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.2 s.17
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• pp.81-87
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• 2004

Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.

• Journal of Animal Science and Technology
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• v.61 no.3
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• pp.163-169
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• 2019

Detection of estrus is an essential factor as a method of successful breeding in the sow. As increasing the adaption of the information and communication technology (ICT) into swine industry, this study focuses on a possibility and quantification of standing time, vulva and body temperature as methods of estrus detection, comparing each time and temperature in estrus and non-estrus period, and analyzing each success rate of new and existing methods. Ultrasonic sensor array and digital infrared thermography were used to evaluate whether new methods such as standing time and number, and vulva and skin temperature can be replaced, or these methods can be quantifiable in estrus period. Ultrasonic sensor array was installed beside the stall and digital infrared thermography was placed in the rear of sow to collect the dates of sow in estrus and non-estrus period. This study showed total standing time, number and number over 10 minutes, and vulva temperature of the sow in estrus period were increased (p < 0.05) compared with those of sow in non-estrus period, respectively. Detection of estrus using standing time and vulva temperature tended (p = 0.06) to increase the success rate when artificial insemination (AI) was performed. In conclusion, standing time and vulva temperature increased when estrus happened. Success rate of AI of sow using these methods showed an increasing trend. Therefore, existing method using the naked eye can be replaced to new method such as vulvar temperature and standing time when detecting the estrus.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• The Journal of the Acoustical Society of Korea
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• v.34 no.4
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• pp.288-294
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• 2015

The fiber optic Sagnac interferometer is well established as a sensor for detection of physical perturbations such as acoustic and vibration. In this paper acoustic signals generated in the cylindrical cavity submerged in transformer oil were measured by the fiber optic sensor array in one Sagnac loop. Two different external sound frequencies, $f_1$ and $f_2$, were applied to the sensor array simultaneously by using piezoelectric with frequency range from 5 kHz to 90 kHz. Based on the experimental results, fiber optic sensor detected harmonic series of applied sound frequency such as $f_1$, $f_2$, $2f_1$, $2f_2$, ${\mid}f_1-f_2{\mid}$, ${\mid}f_1+f_2{\mid}$. Suggested fiber optic sensor array can be applied to monitor physical quantities such as internal sound pressure and vibration due to partial discharge in the real electric transformer system.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.298-306
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• 1997

Ultrasonic sensors are widely used in various applications due to advantages of low cost, simplicity in construction, mechanical robustness, and little environmental restriction in usage. But the main purposes of the noncontact sensors are rather narrowly confined within object detection and distance measurement. For the application of object recognition, ultrasonic sensors exhibit several shortcomings of poor directionality which results in low spatial resolution of an object, and specularity which gives frequent erroneous range readings. To resolve these problems in object recognition, an array of the sensors has been used. To improve the spatial resolution, more number of sensors are used in essence throughout the various devices of the sensor arrays. Under the disguise of a fixed number of the sensors, the array can be shifted mechanically in several steps. In this paper we propose a practical sensor resolution enhancement method using an electronic circuit accompanying the sensor array. The circuit changes the transmitter output voltage in several steps. Using the known sensor characteristics, a set of different return echo signals provide enhanced spatial resolution. The improvement is obtained without the cost of the increased number of the sensors nor extra mechanical devices.

• Journal of Radiation Industry
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• v.9 no.1
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• pp.1-7
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• 2015

The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.56-61
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• 2024

The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2003.11a
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• pp.735-741
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• 2003

A simplified view of array design and application process was introduced. Array design is critical to achieve a successful phased array measurements. A planar microphone array is designed to produce optimum performance and also to fit economic requirement in integrating data acquisition system. Certain performance characteristics are of primary concern when designing arrays. These characteristics include array resolution, spatial aliasing and array sidelobe suppression. Every array has its directional pattern that shows such characteristics. Assuming that a monopole source is located in center, beam-patterns have been simulated varying measurement conditions such as number of sensors. array aperture size, distance between array and source, frequency of interest and so on. Sensor correction was conducted on very channel using magnitudes and phased of FRF with respect to a reference microphone channel. Then with a spiral type array, measurements have been made with two point sources of same frequency in order to investigate array resolving abilities. It is observed that higher frequency source achieves better resolution than lower one does.